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Электронный компонент: TCRT5000

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TCRT5000(L)
Vishay Telefunken
1 (8)
www.vishay.com
Document Number 83760
Rev. A4, 03Jul00
Reflective Optical Sensor with Transistor Output
Description
The TCRT5000(L) has a compact construction where
the emitting-light source and the detector are arranged
in the same direction to sense the presence of an ob-
ject by using the reflective IR beam from the object.
The operating wavelength is 950 mm. The detector
consists of a phototransistor.
Applications
D
Position sensor for shaft encoder
D
Detection of reflective material such as paper,
IBM cards, magnetic tapes etc.
D
Limit switch for mechanical motions in VCR
D
General purpose wherever the space is limited
Features
D
Snap-in construction for PCB mounting
D
Package height: 7 mm
D
Plastic polycarbonate housing construction
which prevents crosstalk
D
L = long leads
D
Current Transfer Ratio (CTR) of typical 10%
94 9442
15116
C
C
A
E
Top view
Order Instruction
Ordering Code
Sensing Distance
Remarks
TCRT5000
12 mm
Leads (3.5 mm)
TCRT5000(L)
12 mm
Long leads (15 mm)
TCRT5000(L)
Vishay Telefunken
www.vishay.com
2 (8)
Rev. A4, 03Jul00
Document Number 83760
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
A
I
FSM
3
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
100
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
5
V
Collector current
I
C
100
mA
Power dissipation
T
amb
55
C
P
V
100
mW
Junction temperature
T
j
100
C
Sensor
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
T
amb
25
C
P
tot
200
mW
Operation temperature range
T
amb
25 to +85
C
Storage temperature range
T
stg
25 to +100
C
Soldering temperature
2 mm from case, t
10 s
T
sd
260
C
TCRT5000(L)
Vishay Telefunken
3 (8)
www.vishay.com
Document Number 83760
Rev. A4, 03Jul00
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 60 mA
V
F
1.25
1.5
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
70
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector dark current
V
CE
= 20 V, I
F
= 0, E = 0
I
CEO
10
200
nA
Sensor
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector current
V
CE
= 5 V, I
F
= 10 mA,
D = 12 mm
I
C
1,2)
0.5
1
2.1
mA
Collector emitter
saturation voltage
I
F
= 10 mA, I
C
= 0.1 mA,
D = 12 mm
V
CEsat
1,2)
0.4
V
1)
See test circuit
2)
Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)
I
F
I
C
V
CC
94 9226
A
Figure 1. Test circuit
Flat Mirror
= 22.5 mm
Rem. 2
D = Distance
12
0.2
96 12314
d = working distance
7.0
0.2
= package height
Figure 2. Test circuit
TCRT5000(L)
Vishay Telefunken
www.vishay.com
4 (8)
Rev. A4, 03Jul00
Document Number 83760
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
100
200
300
0
25
50
75
100
95 11071
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
Coupled device
Phototransistor
IR-diode
Figure 3. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage
0.6
0.7
0.8
0.9
1.0
1.1
1.2
302010 0 10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature (
C )
96 11762
CTR Relative Current
T
ransfer
Ratio
rel
V
CE
=5V
I
F
=20mA
Figure 5. Rel. Current Transfer Ratio vs. Ambient Temp.
0.001
0.010
0.100
1.000
10.000
0.1
1.0
10.0
100.0
I
F
Forward Current ( mA )
96 11763
V
CE
=5V
I Collector Current ( mA
)
C
Figure 6. Collector Current vs. Forward Current
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
V
CE
Collector Emitter Voltage ( V )
96 11764
I Collector Current ( mA
)
C
I
F
=50mA
10mA
5mA
2mA
1mA
20mA
Figure 7. Collector Emitter Saturation Voltage vs.
Collector Current
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
I
F
Forward Current ( mA )
96 11765
V
CE
=5V
CTR Current
T
ransfer Ratio ( % )
Figure 8. Current Transfer Ratio vs. Forward Current
TCRT5000(L)
Vishay Telefunken
5 (8)
www.vishay.com
Document Number 83760
Rev. A4, 03Jul00
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
d Working Distance ( mm )
96 11766
V
CE
=10V
I
C
=20mA
I
Relative Collector Current
Crel
Figure 9. Relative Collector vs. Distance
96 12371
Top view
Figure 10. Footprint