TSUS520.
Vishay Telefunken
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Rev. 2, 20-May-99
www.vishay.de
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Document Number 81055
GaAs Infrared Emitting Diodes in 5 mm (T1
)
Package
Description
TSUS520. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
bluegrey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and photo-
transistors.
Features
D
Low cost emitter
D
Low forward voltage
D
High radiant power and radiant intensity
D
Suitable for DC and high pulse current operation
D
Standard T1
( 5 mm) package
D
Angle of half intensity
=
15
D
Peak wavelength
l
p
= 950 nm
D
High reliability
D
Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control and free air transmission systems with low forward voltage and low cost requirements
in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward Current
I
F
150
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
m
s
I
FM
300
mA
Surge Forward Current
t
p
= 100
m
s
I
FSM
2.5
A
Power Dissipation
P
V
210
mW
Junction Temperature
T
j
100
C
Operating Temperature Range
T
amb
55...+100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x
5 sec, 2 mm from case
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
375
K/W
TSUS520.
Vishay Telefunken
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Rev. 2, 20-May-99
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Document Number 81055
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
20
40
60
80
0
50
100
150
200
250
P
Power Dissipation ( mW
)
V
T
amb
Ambient Temperature (
C )
100
94 7957 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
40
60
80
0
50
100
150
200
250
I Forward Current ( mA
)
F
T
amb
Ambient Temperature (
C )
100
94 7988 e
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
t
p
Pulse Duration ( ms )
94 7989 e
10
0
10
1
10
1
10
1
10
1
10
0
10
2
10
2
I Forward Current (
A
)
F
t
p
/ T = 0.01
I
FSM
= 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
Forward Voltage ( V )
4
94 7996 e
10
1
10
0
10
2
10
3
10
4
10
1
I Forward Current ( mA
)
F
Figure 4. Forward Current vs. Forward Voltage
0
20
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
Relative Forward
V
oltage
Frel
T
amb
Ambient Temperature (
C )
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
I
F
Forward Current ( mA )
94 7991 e
10
3
10
1
10
2
10
4
10
0
1
10
100
1000
I Radiant Intensity ( mW/sr )
e
TSUS 5200
TSUS 5202
TSUS 5201
Figure 6. Radiant Intensity vs. Forward Current
TSUS520.
Vishay Telefunken
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Rev. 2, 20-May-99
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FaxBack +1-408-970-5600
Document Number 81055
Radiant Power ( mW
)
e
I
F
Forward Current ( mA )
94 7992 e
F
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
TSUS 5200
TSUS 5202
Figure 7. Radiant Power vs. Forward Current
10
10
50
0
100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
T
amb
Ambient Temperature (
C )
140
94 7993 e
F
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
900
950
0
0.25
0.5
0.75
1.0
1.25
l Wavelength ( nm )
1000
94 7994 e
Relative Radiant Power
e rel
F
I
F
= 100 mA
Figure 9. Relative Radiant Power vs. Wavelength
0.4
0.2
0
0.2
0.4
I Relative Radiant Intensity
e rel
0.6
94 7995 e
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
TSUS520.
Vishay Telefunken
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Rev. 2, 20-May-99
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Document Number 81055
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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