Vishay General Semiconductor
V40120C, VB40120C & VI40120C
New Product
Document Number 88937
22-Aug-06
www.vishay.com
1
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.423 V at I
F
= 5 A
FEATURES
Trench MOS Schottky Technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 C (for TO-263AB package)
Solder Dip 260 C, 40 seconds (for TO-220 &
TO-262 package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, TO-262AA & TO263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
2 x 20 A
V
RRM
120 V
I
FSM
250 A
V
F
at I
F
= 20 A
0.630 V
T
j
max.
150 C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
V40120C
VI40120C
VB40120C
PIN 1
PIN 2
PIN 3
K
1
2
3
1
K
2
3
TO-263AB
PIN 1
PIN 2
K
HEATSINK
1
2
K
TO-262AA
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
PARAMETER SYMBOL
V40120C
VB40120C
VI40120C
UNIT
Maximum repetitive peak reverse voltage
V
RRM
120
V
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
I
F(AV)
40
20
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
I
FSM
250
A
Peak repetitive reverse current per diode at t
p
= 2 s, 1 kHz
I
RRM
1.0
A
Voltage rate of change (rated V
R
)
dv/dt
10000
V/s
Operating junction and storage temperature range
T
J
, T
STG
- 20 to + 150
C
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Document Number 88937
22-Aug-06
Vishay General Semiconductor
V40120C, VB40120C & VI40120C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER TEST
CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
at I
R
= 1.0 mA T
j
= 25 C
V
(BR)
120 (minimum)
-
V
Instantaneous forward voltage per diode
(1)
at I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
T
j
= 25 C
V
F
0.494
0.584
0.768
-
-
0.84
V
at I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
T
j
= 125 C
0.423
0.518
0.630
-
-
0.68
Reverse current at rated V
R
per diode
(1)
at V
R
= 90 V
T
j
= 25 C
T
j
= 125 C
I
R
11
10
-
-
A
mA
at V
R
= 120 V
T
j
= 25 C
T
j
= 125 C
31
22
500
40
A
mA
THERMAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER SYMBOL
V40120C
VB40120C
VI40120C
UNIT
Typical thermal resistance per diode
R
JC
2.0
C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V40120C-E3/45
2.248
45
50/Tube
Tube
TO-263AB
VB40120C-E3/4W
1.39
4W
50/Tube
Tube
TO-263AB
VB40120C-E3/8W
1.39
8W
800/Reel
Tape & Reel
TO-262AA
VI40120C-E3/4W
1.458
4W
50/Tube
Tube
Figure 1. Maximum Forward Current Derating Curve
0
10
20
30
40
50
0
25
50
75
100
125
150
175
A
v
er
age F
o
r
w
ard Re
ctified C
u
rrent (A)
Case Temperature (C)
Resistive or Inductive Load
V(B,I)40120C
Figure 2. Forward Power Loss Characteristics Per Diode
0
2
4
6
8
10
12
14
16
18
0
4
8
12
16
20
24
Average Forward Current (A)
A
v
erage Po
w
er Loss (
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T
tp
T
Document Number 88937
22-Aug-06
www.vishay.com
3
V40120C, VB40120C & VI40120C
Vishay General Semiconductor
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
300
250
150
50
200
100
0
0
10
100
Number of Cycles at 60 Hz
P
eak F
o
r
w
ard S
u
rge C
u
rrent (A)
T
j
= T
j
max.
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.2
1.0
Instantaneous Forward Voltage (V)
Instantaneo
u
s F
o
r
w
ard C
u
rrent (A)
T
j
= 150 C
T
j
= 125 C
T
j
= 25 C
0.001
0.01
0.1
1
10
100
1000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse C
u
rrent (mA)
T
j
= 150 C
T
j
= 125 C
T
j
= 25 C
Figure 6. Typical Junction Capacitance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
1000
10000
0.1
1
10
100
T
j
= 25 C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
J
u
nction Capacitance (pF)
t - Pulse Duration (s)
T
r
ansient Ther
mal
Impedance
(C/
W
)
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
Junction to Case
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Document Number 88937
22-Aug-06
Vishay General Semiconductor
V40120C, VB40120C & VI40120C
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T O-220AB
1
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.057 (1.45)
0.045 (1.14)
2
1.148 (29.16)
1.118 (28.40)
0.035 (0.90)
0.028 (0.70)
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
K
PIN
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
30 (Typ)
(REF)
0.411 (10.45)
Max.
TO-262AA
1
2
3
0.250 (6.35)
Min.
HEATSINK
PIN 2
PIN 1
PIN 3
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
0.350 (8.89)
0.330 (8.38)
0.110 (2.79)
0.100 (2.54)
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.380 (9.65)
0.41
1 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591 (15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
MIN.
MIN.
MIN.
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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