TSMS3700
Vishay Telefunken
1 (6)
Rev. 3, 01-Aug-00
www.vishay.com
Document Number 81037
GaAs Infrared Emitting Diode in SMT Package
Description
TSMS3700 is a standard GaAs infrared emitting diode
in a miniature PLCC2 package.
Its flat window provides a wide aperture, making it ideal
for use with external optics.
The diode is case compatible to the TEMT3700 photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
D
SMT IRED with high radiant power
D
Low forward voltage
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Suitable for infrared, vapor phase and wave-
solder process
D
Available in 8 mm tape
D
Suitable for DC and high pulse current operation
D
Wide angle of half intensity
=
60
D
Peak wavelength
l
p
= 950 nm
D
High reliability
D
Matching to TEMT3700 phototransistor
94 8553
Applications
Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
PCB mounted infrared sensors
Infrared emitter for miniature light barriers
TSMS3700
Vishay Telefunken
2 (6)
Rev. 3, 01-Aug-00
www.vishay.com
Document Number 81037
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward Current
I
F
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
m
s
I
FM
200
mA
Surge Forward Current
t
p
= 100
m
s
I
FSM
1.5
A
Power Dissipation
P
V
170
mW
Junction Temperature
T
j
100
C
Operating Temperature Range
T
amb
55...+100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x
10sec
T
sd
260
C
Thermal Resistance Junction/Ambient
on PC board
R
thJA
450
K/W
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
I
F
= 100 mA, t
p
= 20 ms
V
F
1.3
1.7
V
g
I
F
= 1 A, t
p
= 100
m
s
V
F
1.8
V
Temp. Coefficient of V
F
I
F
= 100mA
TK
VF
1.3
mV/K
Reverse Current
V
R
= 5 V
I
R
100
m
A
Junction Capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
j
30
pF
Radiant Intensity
I
F
= 100 mA, t
p
= 20 ms
I
e
1.6
4.5
mW/sr
y
I
F
= 1.5 A, t
p
= 100
m
s
I
e
35
mW/sr
Radiant Power
I
F
= 100 mA, t
p
= 20 ms
f
e
15
mW
Temp. Coefficient of
f
e
I
F
= 100 mA
TK
f
e
0.8
%/K
Angle of Half Intensity
60
deg
Peak Wavelength
I
F
= 100 mA
l
p
950
nm
Spectral Bandwidth
I
F
= 100 mA
Dl
50
nm
Temp. Coefficient of
l
p
I
F
= 100 mA
TK
l
p
0.2
nm/K
Rise Time
I
F
= 20 mA
t
r
800
ns
I
F
= 1 A
t
r
400
ns
Fall Time
I
F
= 20 mA
t
f
800
ns
I
F
= 1 A
t
f
400
ns
TSMS3700
Vishay Telefunken
3 (6)
Rev. 3, 01-Aug-00
www.vishay.com
Document Number 81037
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
20
40
60
80
0
50
100
150
200
250
P
Power Dissipation ( mW
)
V
T
amb
Ambient Temperature (
C )
100
94 8029 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
40
60
80
0
25
50
75
100
125
I Forward Current ( mA
)
F
T
amb
Ambient Temperature (
C )
100
94 7916 e
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
0.01
0.1
1
10
1
10
100
1000
10000
t
p
Pulse Length ( ms )
100
95 9985
I Forward Current ( mA
)
F
DC
t
p
/T=0.005
0.5
0.2
0.1
0.01
0.05
0.02
T
amb
v60
C
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
Forward Voltage ( V )
4
94 7996 e
10
1
10
0
10
2
10
3
10
4
10
1
I Forward Current ( mA
)
F
Figure 4. Forward Current vs. Forward Voltage
0
20
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
Relative Forward
V
oltage
Frel
T
amb
Ambient Temperature (
C )
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
I
F
Forward Current ( mA )
94 7956 e
10
3
10
1
10
2
10
4
10
0
0.1
1
10
100
I Radiant Intensity ( mW/sr )
e
Figure 6. Radiant Intensity vs. Forward Current
TSMS3700
Vishay Telefunken
4 (6)
Rev. 3, 01-Aug-00
www.vishay.com
Document Number 81037
Radiant Power ( mW
)
e
I
F
Forward Current ( mA )
94 8012 e
F
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
10
10
50
0
100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
T
amb
Ambient Temperature (
C )
140
94 7993 e
F
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
900
950
0
0.25
0.5
0.75
1.0
1.25
l Wavelength ( nm )
1000
94 7994 e
Relative Radiant Power
e rel
F
I
F
= 100 mA
Figure 9. Relative Radiant Power vs. Wavelength
0.4
0.2
0
0.2
0.4
I Relative Radiant Intensity
e rel
0.6
94 8013 e
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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