VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
G52321-0, Rev 2.3
Page 1
02/26/01
VITESSE
SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Features
General Description
The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with
direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components
allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50
.
Applications
SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s
VSC7991 Block Diagram
Maximum Rise/Fall Times of 38ps
High-Speed Operation
(Up to 10.7Gb/s NRZ Data)
Differential Inputs
Single-Supply
CML-Compatible Data Inputs
On-Chip 50
Input Terminations
50
Output Impedance
50
(1)
50
(1)
DIN
NDIN
60
(1)
IMOD
300
(1)
300
(1)
NDOUT
DOUT
IBN
DCC
VIP
IB
IP
60
(1)
Note: (1) On-die components.
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Page 2
G52321-0, Rev 2.3
02/26/01
VITESSE
SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
AC Characteristics
(Over recommended operating conditions)
Table 1: High Speed Inputs /Outputs
Table 2: Laser Driver AC Electrical Specifications
DC Characteristics
(Over recommended operating conditions)
Table 3: Power Dissipation
Table 4: Laser Driver DC Electrical Specifications
NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin.
Symbol
Parameter
Min
Typ
Max
Units
Conditions
IRL
Input Return Loss
,
50
System
-
15
dB
50MHz to 10GHz
ORL
Output Return Loss, 50
System
-
12
dB
50MHz to 10GHz
Symbol
Parameter
Min
Typ
Max
Units
Conditions
t
R
t
F
Output Rise and Fall Times
38
ps
50
load, 20% to 80%, V
MOD
= 3V
Jitter
Output Jitter
15
ps/p-p
50
Load, V
MOD
= 3V
Overshoot/Undershoot
-
10
+10
%
Duty-Cycle
-
25
+25
%
DCC in the range of V
SS
-
0.5V to V
SS
+2V
Symbol
Parameter
Min
Typ
Max
Units
Conditions
I
VSS
Power Supply Current (V
SS
)
300
330
mA
V
SS
=
-
6.8, R
L
= 50
to GND,
I
MOD
= 120mA, V
BIAS
= 0V
P
D
Total Power Dissipation
2040
2244
mW
V
SS
=
-
6.8, R
L
= 50
to GND
I
MOD
= 120mA, V
BIAS
= 0V
Symbol
Parameter
Min
Typ
Max
Units
Conditions
V
BIAS
Programmable Output Offset Voltage
-
0.8
0
V
V
MOD
Modulation Voltage Amplitude
1.5
3
V
V
OCM
Output Voltage Compliance
4
V
IB, IBN
Laser Bias Control Voltage
-
10
0
V
V
IP
Laser Modulation Control Voltage
V
SS
V
SS
+
0.7
V
V
IH
Input High Voltage
-
150
0
mV
V
IL
Input Low Voltage
-
1.00
-
0.60
V
V
SW
(1)
Input Voltage Swing
450
1000
mVp-p
DCC
Duty-Cycle Control
V
SS
-
0.5V
V
SS
+
2V
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
G52321-0, Rev 2.3
Page 3
02/26/01
VITESSE
SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Absolute Maximum Ratings
(1)
Negative Power Supply Voltage (V
SS
).............................................................................................. V
CC
to
-
8.0V
All Pins ................................................................................................................................................V
SS
to + .5V
Supply Voltage (V
SS
) ......................................................................................................................................... 8V
Supply Current (I
SS
) .................................................................................................................................... 500mA
Input Voltage (V
IN
)
........................................................................................................................................ -
2.0V
Output Voltage (V
OUT
).................................................................................................................................
-
4.0V
Modulation Control Voltage (V
IP
).........................................................................................................V
SS
-
0.5V
Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V
Output Offset Control Current (I
IB
) .............................................................................................................. 50mA
Maximum Junction Temperature Range
..................................................................................... -
55C to +125C
Storage Temperature Range:
....................................................................................................... -
55C to +125C
Note:
(1) CAUTION: Stresses listed under "Absolute Maximum Ratings" may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (GND) .............................................................................................................................. 0V
Negative Voltage Rail (V
SS
)
...........................................................................................................-
6.5V to
-
7.2V
Operational Case Temperature (T
C1
) ...................................................................................................0C to 75C
VITESSE
SEM
ICOND
UCT
OR CORPORA
T
ION
Advance Pr
od
uct I
n
for
m
at
ion
VSC79
91
SDH/SONE
T
10
.7Gb
/s
Ele
c
troa
b
s
orp
t
io
n Mo
du
la
t
o
r/L
a
se
r Dio
de
Drive
r
P
age 4
G
523
21-
0, R
e
v
2
.
3
02/
26/
01
VI
T
ESSE
SEM
ICO
NDUCT
OR CORPO
R
AT
IO
N
74
1 C
a
l
l
e
P
l
an
o
Ca
m
a
r
illo
,
CA
9
3
0
1
2
T
e
l:
(
8
0
0
)
V
I
T
ESSE
FA
X
:
(
805
) 9
8
7
-
58
96
E
m
a
il: p
r
o
d
in
f
o
@vite
sse
.
c
o
m
In
t
e
r
n
e
t: www.vite
sse
.c
o
m
Bar
e
D
i
e Descr
ipti
on
s
Figur
e
1
:
Pa
d As
s
i
gnme
n
t
s
2354m (0.0927")
1754m
(0.0691")
VSC7991
50m
(0.002")
50m
(0.002")
NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads.
Die Size: 2354m x 1754m (0.0927" x 0.0691")
Die Thickness: 381m (0.015")
Pad Pitch: 150m (0.0059")
Pad Size: 116m x 116m (0.0046" x 0.0046")
Pad Passivation Opening: 100m x 100m (0.0039" x 0.0039")
Scribe Size: 50m (0.002")
IB
Pad 35
GND
Pad 36
GND
Pad 20
GND
Pad 19
IP
Pad 22
IP
Pad 21
VSS
Pad 17
VSS
Pad 16
VSS
Pad 15
VSS
Pad 14
VSS
Pad 42
VSS
Pad 43
VSS
Pad 44
VSS
Pad 45
GND
Pad 37
GND
Pad 38
GND
Pad 39
GND
Pad 40
GND
Pad 41
DCC
Pad 13
GND
Pad 11
GND
Pad 12
GND
Pad 46
GND
Pad 47
GND
Pad 48
VIP
Pad 18
NDIN
Pad 2
GND
Pad 1
GND
Pad 4
GND
Pad 3
GND
Pad 6
GND
Pad 7
DIN
Pad 8
GND
Pad 9
NC
Pad 10
GND
Pad 5
DOUT
Pad 32
GND
Pad 33
IB
Pad 34
IBN
Pad 23
IBN
Pad 24
GND
Pad 30
GND
Pad 31
GND
Pad 28
GND
Pad 27
NDOUT
Pad 26
GND
Pad 25
GND
Pad 29
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
G52321-0, Rev 2.3
Page 5
02/26/01
VITESSE
SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Table 5: Pad Coordinates
Pad
Number
Signal
Name
Coordinates (m)
Pad
Number
Signal
Name
Coordinates (m)
X
Y
X
Y
1
GND
2296
1546
25
GND
58
208
2
NDIN
2296
1396
26
NDOUT
58
358
3
GND
2296
1246
27
GND
58
508
4
GND
2296
1061.5
28
GND
58
692.5
5
GND
2296
877
29
GND
58
877
6
GND
2296
692.5
30
GND
58
1061.5
7
GND
2296
508
31
GND
58
1246
8
DIN
2296
358
32
DOUT
58
1396
9
GND
2296
208
33
GND
58
1546
10
NC
2296
58
34
IB
58
1696
11
GND
2146
58
35
IB
208
1696
12
GND
1996
58
36
GND
358
1696
13
VDCC
1846
58
37
GND
508
1696
14
VSS
1696
58
38
GND
658
1696
15
VSS
1546
58
39
GND
808
1696
16
VSS
1396
58
40
GND
958
1696
17
VSS
1246
58
41
GND
1108
1696
18
VIP
1027
58
42
VSS
1258
1696
19
GND
808
58
43
VSS
1408
1696
20
GND
658
58
44
VSS
1558
1696
21
IP
508
58
45
VSS
1708
1696
22
IP
358
58
46
GND
1858
1696
23
IBN
208
58
47
GND
2008
1696
24
IBN
58
58
48
GND
2158
1696
PDF 
ZIP