Document:1G5-0124
Rev.1
Page 1
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access
mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,
portable electronic application. A new refresh feature called "self-refresh" is supported and very slow CBR
cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features
Single 5V(
%) or 3.3V(
%) only power supply
High speed t
RAC
acess time: 50/60ns
Low power dissipation
- Active wode : 5V version 660/605 mW (Mas)
3.3V version 432/396 mW (Mas)
- Standby mode: 5V version 1.375 mW (Mas)
3.3V version 0.54 mW (Mas)
Extended - data - out(EDO) page mode access
I/O level: TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
4 refresh modesh:
- RAS only refresh
- CAS - before - RAS refresh
- Hidden refresh
- Self-refresh(S-version)
10
10
Document:1G5-0124
Rev.1
Page 2
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Pin Name
Function
A0-A10
Address inputs
- Row address
- Column address
- Refresh address
DQ1~DQ4
Data-in / data-out
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
OE
Output enable
Vcc
Power (+5 V or + 3.3V)
Vss
Ground
VCC
1
DQ1
2
DQ2
3
DQ3
4
DQ4
5
VCC
6
8
9
10
11
NC
12
WE
13
A0
A1
17
A2
18
A3
19
VSS
RAS
CAS
OE
A8
A7
A6
A5
A4
VSS
V
G
2
6
(
V
)
(
S
)
1
7
4
0
5
J
Pin Description
Pin Configuration
21
22
23
24
25
26
15
14
16
A10
26/24-PIN 300mil Plastic SOJ
A9
VCC
1
DQ1
2
DQ2
3
DQ3
4
DQ4
5
VCC
6
8
9
10
11
NC
12
WE
13
A0
A1
17
A2
18
A3
19
VSS
RAS
CAS
OE
A8
A7
A6
A5
A4
VSS
V
G
2
6
(
V
)
(
S
)
1
7
4
0
5
T
21
22
23
24
25
26
15
14
16
A10
26/24-PIN 300mil Plastic TSOP (ll)
A9
A0-A10
A0-A10
A0-A10
Document:1G5-0124
Rev.1
Page 3
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
WE
CAS
NO. 2 CLOCK
GENERATOR
COLUMN
ADDRESS
BUFFERS (11)
REFRESH
CONTROLLER
REFRESH
COUNTER
BUFFERS (11)
ADDRESS
ROW
NO. 1 CLOCK
GENERATOR
A0
RAS
A1
A2
A3
A4
A5
A6
A7
A8
CONTROL
LOGIC
DATA-IN BUFFER
DATA-OUT
BUFFER
OE
DQ1
.
DQ4
.
COLUMN
DECODER
2048
SENSE AMPLIFIERS
I/O GATING
2048x4
2048x2048x4
MEMORY
ARRAY
2
0
4
8
R
O
W
D
E
C
O
D
E
R
Vcc
Vss
Block Diagram
A9
A10
Document:1G5-0124
Rev.1
Page 4
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
TRUTH TABLE
Notes: 1. EARLY WRITE only.
FUNCTION
RAS
CAS
WE
OE
ADDRESSES
DQ
S
Notes
ROW
COL
STANDBY
H
X
X
X
X
High-Z
READ
L
L
H
L
ROW
COL
Data-Out
WRITE: (EARLY WRITE )
L
L
L
X
ROW
COL
Data-ln
READ WRITE
L
L
ROW
COL
Data-Out,Data-ln
EDO-PAGE-
MODE READ
1st Cycle
L
H
L
ROW
COL
Data-Out
2nd Cycle
L
H
L
n/a
COL
Data-Out
EDO-PAGE
MODE WRITE
1st Cycle
L
L
X
ROW
COL
Data-In
2nd Cycle
L
L
X
n/a
COL
Data-In
EDO-
PAGE-MODE
READ-WRITE
1st Cycle
L
ROW
COL
Data-Out, Data-In
2nd Cycle
L
n/a
COL
Data-Out, Data-In
HIDDEN
REFRESH
READ
L
H
L
ROW
COL
Data-Out
WRITE
L
L
X
ROW
COL
Data-In
1
RAS-ONLY REFRESH
L
H
X
X
ROW
n/a
High-Z
CBR REFRESH
L
H
X
X
X
High-Z
H
X
H
L
L
H
H
L
H
L
H
L
H
L
H
L
H
L
L
H
H
L
H
L
L
H
L
H
L
L
H
L
H
L
Document:1G5-0124
Rev.1
Page 5
VIS
VG26(V)(S)17405
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Absolute Maximum Ratings
Recommended DC Operating Conditions
Capacitance
Ta = 25C, V
CC
= 5V
%
or 3.3V
%, f = 1MHz
Note: 1. Capacitance measured with effective capacitance measuring method.
2. RAS, CAS = V
IH
to disable Dout.
Parameter
Symbol
Value
Unit
5V
Voltage on any pin relative to Vss
3.3V
V
T
-1.0 to + 7.0
-0.5 to + 4.6
V
5V
Supply voltage relative to Vss
3.3V
V
CC
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
I
OUT
50
mA
Power dissipation
P
D
1.0
W
Operating temperature
T
OPT
0 to + 70
C
Storage temperature
T
STG
-55 to + 125
C
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
4.5
5.0
5.5
3.0
3.3
3.6
V
Input High Voltage, all inputs
V
IH
2.4
-
V
CC
+ 1.0
2.0
- V
CC
+ 0.3
V
Input Low Voltage, all inputs
V
IL
-1.0
-
0.8
-0.3
-
0.8
V
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
C
I1
-
5
pF
1
Input capacitance (RAS, CAS, OE, WE)
C
I2
-
7
pF
1
Output capacitance
(Data-in, Data-out)
C
I/O
-
7
pF
1, 2
10
10
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