Document : 1G5-0142
Rev.1
Page 1
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called " self-refresh " is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
Single 5V (
%) or 3.3V (
%) only power supply
High speed t
RAC
access time : 50/60 ns
Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
Fast Page Mode access
I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
10
10
Document : 1G5-0142
Rev.1
Page 2
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Pin Description
Pin Name
Function
A0 - A10
Address inputs
- Row address A0 - A10
- Column address A0 - A10
- Refresh address A0 - A10
DQ1 ~ DQ4
Data - in/data - out
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
OE
Output enable
V
cc
Power (+ 5V or + 3.3V)
V
ss
Ground
V
G
2
6
(
V
)
(
S
)
1
7
4
0
0
E
J
DQ1
WE
V
SS
DQ4
A
2
A
3
V
CC
A
0
A
1
A
10
V
CC
A
8
A
7
A
6
A
5
A
4
V
SS
1
2
3
4
5
6
CAS
OE
A
9
26
25
24
23
22
21
8
9
10
11
12
13
19
18
17
16
15
14
RAS
DQ3
NC
DQ2
Pin configuration
26/24 - PIN 300mil Plastic SOJ
Document : 1G5-0142
Rev.1
Page 3
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
WE
GENERATOR
COLUMN-
ADDRESS
BUFFERS (11)
REFRESH
CONTROLLER
REFRESH
COUNTER
BUFFERS (11)
ADDRESS
ROW
NO. 1 CLOCK
GENERATOR
A0
RAS
A1
A2
A3
A4
A5
A6
A7
A8
CONTROL
LOGIC
DATA - IN BUFFER
DATA - OUT
BUFFER
DQ1
DQ4
COLUMN
DECODER
2048
SENSE AMPLIFIERS
I/O GATING
2048 x 4
2048 x 2048 x 4
MEMORY
ARRAY
2
0
4
8
R
O
W
D
E
C
O
D
E
R
Vcc
Vss
Block Diagram
CAS
A9
A10
NO. 2 CLOCK
Document : 1G5-0142
Rev.1
Page 4
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Truth Table
Notes : 1. EARLY WRITE only.
FUNCTION
RAS
CAS
WE
OE
ADDRESSES
DQ
S
Notes
ROW
COL
STANDBY
H
X
X
X
X
High - Z
READ
L
L
H
L
ROW
COL Data - Out
WRITE : (EARLY
WRITE)
L
L
L
X
ROW
COL Data - In
READ WRITE
L
L
ROW
COL Data - Out, Data - In
PAGE -
MODE READ
1st Cycle
L
H
L
ROW
COL Data - Out
2st
Cycle
L
H
L
n/a
COL Data - Out
PAGE -
MODE WRITE
1st Cycle
L
L
X
ROW
COL Data - In
2st
Cycle
L
L
X
n/a
COL Data - In
PAGE - MODE
READ - WRITE
1st Cycle
L
ROW
COL Data - Out, Data - In
2st
Cycle
L
n/a
COL Data - Out, Data - In
HIDDEN
REFRESH
READ
L
H
L
ROW
COL Data - Out
WRITE
L
L
X
ROW
COL Data - In
1
RAS - ONLY REFRESH
L
H
X
X
ROW
n/a
High - Z
CBR REFRESH
L
H
X
X
X
High - Z
H
X
H
L
L
H
H
L
H
L
H
L
H
L
H
L
H
L
L
H
H
L
H
L
L
H
L
H
L
L
H
L
H
L
Document : 1G5-0142
Rev.1
Page 5
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Absolute Maximum Rating
Recommended DC Operating Conditions
Capacitance
Ta = 25C, V
CC
= % or %, f = 1MHz
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = V
IH
to disable Dout.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss 5V
3.3V
V
T
-1.0 to + 7.0
-0.5 to + 4.6
V
Supply voltage relative to Vss 5V
3.3V
V
cc
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
I
OUT
50
mA
Power dissipation
P
D
1.0
W
Operating temperature
T
OPT
0 to + 70
C
Storage temperature
T
STG
-55 to + 125
C
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
cc
4.5
5.0
5.5
3.0
3.3
3.6
V
Input High Voltage, all inputs
V
IH
2.4
-
V
CC
+ 1.0
2.0
-
V
CC
+ 0.3
V
Input Low Voltage, all inputs
V
IL
-1.0
-
0.8
-0.3
-
0.8
V
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
C
l1
-
5
pF
1
Input capacitance
(RAS, CAS, OE, WE)
C
l2
-
7
pF
1
Output capacitance
(Data - in, Data - out)
C
I/O
-
7
pF
1,2
5V 10
3.3V 10
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