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Электронный компонент: КП809Б

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N- 809.
:
150C

: ,

, ,
, , ,
.
@T
J
= 25C ( )
..
I
D
@T
C
=25C
9.6
I
D
@T
C
=70C
6.0
I
DM
(1)
20
P
D
@T
C
=25C
50

0.29
/C
V
GS
-
20
E
AS
(2)
-
I
AR
(1)
9.6
E
AR
(1)
-
dv/dt

(3)
8.0
/
T
J
T
STG

-10
+150
C
10 .
300
C
.
. . .
.
V
(BR)DSS
-
500
-
-
V
GS
= 0,
I
D
= 250A
V
(BR)DSS
/T
J

-
1.0
-
/C
= 25C,
I
D
= 1A
-

:
(1)
- ; .
(2)
-
(3)
- I
SD
9,6, di /dt 150/, V
DD
V
(BR)DSS
, T
J
150C
(4)
- . 300, 2%.
R
DS(on)
-
-
-
0.60
V
GS
= 20,
I
D
= 2.0A
(4)
V
GS(th)
1.5
3.5
5.0
V
DS
= V
GS
,
I
D
= 10A
g
fs
1.5
-
-
/
V
DS
= 20,
I
D
= 3.0A
(4)
I
DSS
-
-
1000
V
DS
= 500,
V
GS
= 0
-
-
1000
V
DS
= 500,
V
GS
= 0,
T
J
= 125C
I
GSS
()
-
-
100
V
GS
= 20
()
-
-
-100
V
GS
= -20
..
. . . ..
.
I
S
(
)
-
-
9.6

I
SM

(
)
(1)
-
-
20
V
SD
-
-
2.5
T
J
= 25C,
I
S
= 9.6A
V
GS
= 0
(4)