EDI2CG472128V
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst
SRAM, 84 position Dual Key; Double High DIMM (168 contacts)
Module, organized as 4x128Kx72. The Module contains eight (8)
Synchronous Burst Ram Devices, packaged in the industry stan-
dard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4
Substrate. The module architecture is defined as a Sync/Sync
Burst, Flow-Through, with support for either linear or sequential
burst. This module provides High Performance, 2-1-1-1 accesses
when used in Burst Mode, and used as a Synchronous Only Mode,
provides a high performance cost advantage over BiCMOS asyn-
chronous device architectures.
Synchronous Only operations are performed via strapping ADSC\
Low, and ADSP\ / ADV\ High, which provides for Ultra Fast
Accesses in Read Mode while providing for internally self-timed
Early Writes.
Synchronous/Synchronous Burst operations are in relation to an
externally supplied clock, Registered Address, Registered Global
Write, Registered Enables as well as an Asynchronous Output
enable. This Module has been defined with full flexibility, which
allows individual control of each of the eight bytes, as well as
Quad Words in both Read and Write Operations.
FEATURES
s 4x128Kx72 Synchronous, Synchronous Burst
s Access Speed(s): t
KHQV
= 8.5, 10, 12, 15ns
s Flow-Through Architecture
s Linear and Sequential Burst Support via MODE pin
s Clock Controlled Registered Module Enable (EM\)
s Clock Controlled Registered Bank Enables (E
1
\, E
2
\, E
3
\, E
4
\)
s Clock Controlled Byte Write Mode Enable (BWE\)
s Clock Controlled Byte Write Enables (BW
1-8
\)
s Clock Controlled Registered Address
s Clock Controlled Registered Global Write (GW\)
s Aysnchronous Output Enable (G\)
s Internally self-timed Write
s Individual Bank Sleep Mode enables (ZZ
1
, ZZ
2
, ZZ
3
, ZZ
4
)
s Gold Lead Finish
s 3.3V
10% Operation
s Common Data I/O
s High Capacitance (30pF) drive, at rated Access Speed
s Single total array Clock
s Multiple Vcc and Vss
March 1998 Rev. 0
ECO# 10038
4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM
EDI2CG472128V
2
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
PIN CONFIGURATION
DQ
0-63
Input/Output Bus
DQP
0-7
Parity Bits
A
0-6
Address Bus
E
1
\, E
2
\,
Synchronous Bank Enables
E
3
\, E
4
\
BWE\
Byte Write Mode Enable
BW
1
-
8
\
Byte Write Enables
CLK
Array Clock
GW\
Synchronous Global Write
Enable
G\
Asynchronous Output Enable
ZZ
1
, ZZ
2
,
Synchronous Bank Enables
ZZ
3
, ZZ
4
Vcc
3.3V Power Supply
Vss
Ground
NC
No Connect
PIN NAMES
PIN SYMBOLS
PIN
PIN
PIN
PIN
FRONT
FRONT
BACK
BACK
V
SS
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
A
16
A
14
A
12
A
10
V
CC
RFU
V
SS
MODE
RFU
V
CC
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
V
SS
A
17
A
15
V
CC
A
11
V
SS
RFU
V
SS
CLK
V
SS
BWE\
V
CC
V
SS
DQ
19
V
SS
DQ
24
DQ
25
DQP
2
V
SS
DQ
31
DQ
30
V
SS
NC
V
CC
A
13
DQ
20
A
0
A
2
A
4
A
6
A
1
A
3
A
5
A
7
NC
V
CC
DQ
16
DQ
23
DQ
22
DQ
17
DQ
18
DQ
21
V
CC
DQP
3
V
CC
A
8
BW
8
\
BW
7
\
V
SS
A
9
BW
6
\
BW
5
\
V
SS
ZZ
2
E
4
\
E
2
\
EM\
GW\
BW
4
\
BW
3
\
ADSC\
ADSP\
E
1
\
E
3
\
G\
BW
2
\
BW
1
\
ADV\
DQ
26
DQ
27
V
SS
NC
V
CC
DQ
32
DQ
33
DQ
34
DQ
35
V
SS
V
CC
DQ
40
DQ
41
DQ
42
DQ
43
V
SS
DQ
29
DQ
28
V
SS
DQP
4
V
CC
DQ
39
DQ
38
DQ
37
DQ
36
V
SS
DQP
5
V
CC
DQ
47
DQ
46
DQ
45
10
11
12
13
14
15
16
17
18
DQ
44
V
SS
V
CC
DQ
0
DQ
1
DQ
2
DQ
3
V
SS
V
CC
DQ
8
DQ
9
DQ
10
DQ
11
V
SS
DQP
0
V
CC
DQ
7
DQ
6
DQ
5
DQ
4
V
SS
DQP
1
V
CC
DQ
15
DQ
14
DQ
13
DQ
12
V
SS
NC
V
CC
DQ
48
DQ
49
DQ
50
DQ
51
V
SS
V
CC
DQ
56
DQ
57
DQ
58
DQ
59
V
SS
DQP
6
V
CC
DQ
55
DQ
54
DQ
53
DQ
52
V
SS
DQP
7
V
CC
DQ
63
DQ
62
DQ
61
DQ
60
V
SS
ZZ
3
ZZ
1
ZZ
4
1
2
3
4
5
6
7
8
9
RFU
EDI2CG472128V
3
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
FUNCTIONAL BLOCK DIAGRAM
G\
GW\
E
1
\
GW\
G\
E\
DQ
E
3
\
E
2
\
E
4
\
CLK
CLK
A
0-16
DQ
0-31
DQP
0-3
128Kx36
DQP
DQP
4-7
ZZ
ZZ1
ZZ
2
ZZ
3
ZZ
4
U1
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U3
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U2
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U4
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U5
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U6
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U8
GW\
G\
E\
DQ
CLK
128Kx36
DQP
ZZ
U7
DQ
32-63
EDI2CG472128V
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
PIN DESCRIPTIONS
DIMM Pins
Symbol
Type
Description
2, 87, 4, 89, 7, 92
A
0-16
Input
Addresses: These inputs are registered and must meet the setup and hold times around the rising edge of CLK. The
9, 94, 12, 96, 10
Synchronous
burst counter generates internal addresses associated with A
0
and A
1
, during burst and wait cycle.
93, 8, 91, 5, 88, 3
107, 106, 23,
BW
1
\, BW
1
\,
Input
Byte Write: A byte write is LOW for a WRITE cycle and HIGH for a READ cycle. BW
0
/ controls DQ
0-7
and DQP
0
, BW
1
\
22, 109, 108,
BW
3
\, BW
4
\,
Synchronous
controls DQ
8-15
and DQP
1
. BW
2
\ controls DQ
16-23
and DQP
2
. BW
3
\ controls DQ
24-31
and DQP
3
. BW
4
\ controls DQ
32-39
25, 24
BW
5
\, BW
6
\,
and DQP
4
. BW
5
\ controls DQ
40-47
and DQP
5
. BW
6
\ controls DQ
48-55
and DQP
6
. BW
7
\ controls DQ
56-64
and DQP
7
.
BW
7
\, BW
8
\
104
BWE\
Input
Write Enable: This active LOW input gates byte write operations and must meet the setup and hold times around the
Synchronous
rising edge of CLK.
19
GW\
Input
Global Write: This active LOW input allows a full 72-bit WRITE to occur independent of the BWE\ and BWx\ lines and
Synchronous
must meet the setup and hold times around the rising edge of CLK.
101
CLK
Input
Clock: This signal registers the addresses, data, chip enables, write control and burst control inputs on its rising edge.
Synchronous
All synchronous inputs must meet setup and hold times around the clock's rising edge.
98, 15,
E
1
\, E
2
\
Input
Bank Enables: These active LOW inputs are used to enable each individual bank and to gate ADSP\.
99,14
E
3
\, E
4
\
Synchronous
103
G\
Input
Output Enable: This active LOW asynchronous input enables the data output drivers.
111
ADV\
Input
Address Status Processor: This active LOW input is used to control the internal burst counter. A HIGH on this pin
Synchronous
generates wait cycle (no address advance).
27
ADSP\
Input
Address Status Processor: This active LOW input, along with EL\ and EH\ being LOW, causes a new external
Synchronous
address to be registered and a READ cycle is initiated using the new address.
26
ADSC\
Input
Address Status Controller: This active LOW input causes device to be de-selected or selected along with new
Synchronous
external address to be registered. A READ or WRITE cycle is initiated depending upon write control inputs.
17
MODE
Input Static
Mode: This input selects the burst sequence. A LOW on this pin selects LINEAR BURST. A NC or HIGH on this pin
selects INTERLEAVED BURST.
36, 50,
ZZ
1
, ZZ
2
,
Input
Snooze: These active HIGH inputs put the individual banks in low power consumption standby mode.
64, 78
ZZ
3
, ZZ
4
Asynchronous
For normal operation, this input has to be either LOW or NC (no connect).
Various
DQ
0-63
Input/Output
Data Inputs/Outputs: First byte is DQ
0-7
, second byte is DQ
8-15
, third byte is DQ
16-23
, fourth byte is DQ
24-31
, fifth byte is
DQ
32-39
, sixth byte is DQ
40-47
, seventh byte is DQ
48-55
and the eight byte is DQ
56-64
.
113, 120, 127,
DQP
0-7
Input/Output
Parity Inputs/Outputs: DQP
0
is parity bit for DQ
0-7
. DQP
1
is parity bit for DQ
8-15
. DQP
2
is parity bit for DQ
16-23
. DQP
3
134, 141, 148,
is parity bit for DQ
24-31
. DQP
4
\ is parity bit for DQ3
2-39
. DQP
5
is parity bit for DQ
40-47
. DQP
6
\ is parity bit for DQ
48-55
.
155, 162
DQP
7
is parity bit for DQ
56-64
and DQP
7
. In order to use the device configured as a 128K x 64, the parity bits need to
be tied to Vss through a 10K ohm resistor.
Various
Vcc
Supply
Core power supply: +3.3V -5%/+10%
Various
Vss
Ground
Ground
EDI2CG472128V
5
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
SYNCHRONOUS BURST - TRUTH TABLE
Operation
E1\
E2\
E3\
E4\ ADSP\ ADSC\
ADV\
GW\
G\
CLK
DQ
Addr. Used
Deselected Cycle, Power Down; Bank 1
H
X
*
*
X
L
X
X
X
L-H
High-Z
None
Deselected Cycle, Power Down; Bank 2
X
H
*
*
X
L
X
X
X
L-H
High-Z
None
Read Cycle, Begin Burst; Bank 1
L
H
*
*
L
X
X
X
L
L-H
Q
External
Read Cycle, Begin Burst; Bank 1
L
H
*
*
L
X
X
X
H
L-H
High-Z
External
Read Cycle, Begin Burst; Bank 2
H
L
*
*
L
X
X
X
L
L-H
Q
External
Read Cycle, Begin Burst; Bank 2
H
L
*
*
L
X
X
X
H
L-H
High-Z
External
Write Cycle, Begin Burst; Bank 1
L
H
*
*
H
L
X
L
X
L-H
D
External
Write Cycle, Begin Burst; Bank 2
H
L
*
*
H
L
X
L
X
L-H
D
External
Read Cycle, Begin Burst; Bank 1
L
H
*
*
H
L
X
H
L
L-H
Q
External
Read Cycle, Begin Burst; Bank 1
L
H
*
*
H
L
X
H
H
L-H
High-Z
External
Read Cycle, Begin Burst; Bank 2
H
L
*
*
H
L
X
H
L
L-H
Q
External
Read Cycle, Begin Burst; Bank 2
H
L
*
*
H
L
X
H
H
L-H
High-Z
External
Read Cycle, Continue Burst; Bank 1
X
H
*
*
X
H
L
H
L
L-H
Q
Next
Read Cycle, Continue Burst; Bank 1
X
H
*
*
X
H
L
H
H
L-H
High-Z
Next
Read Cycle, Continue Burst; Bank 2
H
X
*
*
X
H
L
H
L
L-H
Q
Next
Read Cycle, Continue Burst; Bank 2
H
X
*
*
X
H
L
H
H
L-H
High-Z
Next
Read Cycle, Continue Burst; Bank 1
H
H
*
*
X
H
L
H
L
L-H
Q
Next
Read Cycle, Continue Burst; Bank 1
H
H
*
*
X
H
L
H
H
L-H
High-Z
Next
Read Cycle, Continue Burst; Bank 2
H
H
*
*
X
H
L
H
L
L-H
Q
Next
Read Cycle, Continue Burst; Bank 2
H
H
*
*
X
H
L
H
H
L-H
High-Z
Next
Write Cycle, Continue Burst; Bank 1
X
H
*
*
H
H
L
L
X
L-H
D
Next
Write Cycle, Continue Burst; Bank 1
H
H
*
*
X
H
L
L
X
L-H
D
Next
Write Cycle, Continue Burst; Bank 2
H
X
*
*
H
H
L
L
X
L-H
D
Next
Write Cycle, Continue Burst; Bank 2
H
H
*
*
X
H
L
L
X
L-H
D
Next
Read Cycle, Suspend Burst; Bank 1
X
H
*
*
H
H
H
H
L
L-H
Q
Current
Read Cycle, Suspend Burst; Bank 1
X
H
*
*
H
H
H
H
H
L-H
High-Z
Current
Read Cycle, Suspend Burst; Bank 2
H
X
*
*
H
H
H
H
L
L-H
Q
Current
Read Cycle, Suspend Burst; Bank 2
H
X
*
*
H
H
H
H
H
L-H
High-Z
Current
Read Cycle, Suspend Burst; Bank 1
H
H
*
*
X
H
H
H
L
L-H
Q
Current
Read Cycle, Suspend Burst; Bank 1
H
H
*
*
X
H
H
H
H
L-H
High-Z
Current
Read Cycle, Suspend Burst; Bank 2
H
H
*
*
X
H
H
H
L
L-H
Q
Current
Read Cycle, Suspend Burst; Bank 2
H
H
*
*
X
H
H
H
H
L-H
High-Z
Current
Write Cycle, Suspend Burst; Bank 1
X
H
*
*
H
H
H
L
X
L-H
D
Current
Write Cycle, Suspend Burst; Bank 1
H
H
*
*
X
H
H
L
X
L-H
D
Current
Write Cycle, Suspend Burst; Bank 2
H
X
*
*
H
H
H
L
X
L-H
D
Current
Write Cycle, Suspend Burst; Bank 2
H
H
*
*
X
H
H
L
X
L-H
D
Current
*All Truth Table Functions Repeat for Bank 3 (E
3
\) and Bank 4 (E
4
\)
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