June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

Features

High Performance SRAM memory Card

· Universal 3.3 to 5 Volt Supply allows for wider
compatibility between systems.

· Fast Access times: 150ns @ 5V
250ns @ 3.3V

· x8/x16 PCMCIA standard interface

· Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100µA typical

· Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time

·7 months - type I card
·18 months - type II card

typical based on 4MB (lower densities will
have greater storage times)

· Unlimited write cycles, no endurance issues

· Optional Features:

· 2KB EEPROM attribute memory containing
CIS
· Optional Hardware Write Protect switch

· PC Card Standard Type I or Type II Form Factor

The WEDC SRAM Series (SRV) memory cards
offer a high performance nonvolatile storage solution
for code and data storage, disk caching, and write
intensive mobile and embedded applications.

Packaged in PCMCIA type I or type II housing (type
II for cards with extended battery backup time and
8MB cards), the WEDC SRAM SRV series is based
on 1 or 4Mbit SRAM

memories, providing densities

from 256 Kilobytes to 8 Megabytes.

The SRV series of SRAM memory cards is a
universal 3V/ 5V power supply and operates at
speeds as high as 150ns. The cards are based on
advanced CMOS technology providing very low
power and reliable data retention characteristics.
WEDC's SRAM cards contain a rechargeable
lithium battery and recharge circuitry, eliminating the
need for replaceable batteries found in many SRAM
cards.

WEDC's standard cards are shipped with WEDC's
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.

SRAM Memory Card 256KB through 8MB

Block Diagram

4MB SRAM Card Shown

decoder

and

control

logic

address

buffer

[A1..A19]

/CSLi

/CSHi

[DO..D7]

[D8..D15]

Write Prot

Switch

Vcc

[A20..A22]

ATTRIBUTE

MEMORY

CE1#

CE2#

WE#

OE#

REG#

+ + +

/CS-A

/RD

/WR

CTRL

Power Management

and

Battery Control

Lithium Bat.

to internal

power

supply

Vcc

BVD1

BVD2

GND

VS1

VS2

[D8..D15]

[DO..D7]

I/O BUFFER

SRAM
512K x 8

[A1..A11]

GND

2. pull up resistor (min 10k)

Notes: 1. pull down resistor (min 100k)

SRAM
512K x 8

General Description

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

Pinout

Notes:
1. CD1# and CD2# are grounded internal to PC Card.
2. Shows density for which specified address bit is MSB. Higher order address bits are no
connects (ie 1MB A19 is MSB, A20 - A21 are NC).
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.
4. The A22 Address line for 8MB capacities is also used for 6MB cards.

Pin Signal name I/O

Function

Active

Pin Signal name I/O

Function

Active

GND

Ground

GND

Ground

DQ3

I/O

Data bit 3

CD1#

Card Detect 1

LOW

DQ4

I/O

Data bit 4

DQ11

I/O

Data bit 11

DQ5

I/O

Data bit 5

DQ12

I/O

Data bit 12

DQ6

I/O

Data bit 6

DQ13

I/O

Data bit 13

DQ7

I/O

Data bit 7

DQ14

I/O

Data bit 14

CE1#

Card enable 1

LOW

DQ15

Data bit 15

A10

Address bit 10

CE2#

Card Enable 2

LOW

OE#

Output enable

LOW

VS1

Voltage Sense 1

GND

A11

Address bit 11

N.C.

Address bit 9

N.C.

Address bit 8

A17

Address bit 17

256KB(2)

A13

Address bit 13

A18

Address bit 18

512KB(2)

A14

Address bit 14

A19

Address bit 19

1MB(2)

WE#

Write Enable

LOW

A20

Address bit 20

2MB(2)

16 RDY/BSY# O

Ready/Busy

N.C.

A21

Address bit 21

4MB(2)

Vcc

Supply Voltage

Vcc

Supply Voltage

Vpp1

Prog. Voltage

N.C.

Vpp2

Prog. Voltage

N.C.

A16

Address bit 16

A22

Address bit 22

8MB(2,4)

A15

Address bit 15

A23

N.C.

A12

Address bit 12

A24

N.C.

Address bit 7

A25

N.C.

Address bit 6

VS2

Voltage Sense 2

N.C.

Address bit 5

N.C.

Address bit 4

Wait#

Extended Bus Cycle

Low

Address bit 3

N.C.

Address bit 2

REG#

Attrib Mem Select

Low

Address bit 1

BVD2

Bat. Volt. Detect 2

Address bit 0

BVD1

Bat. Volt. Detect 1

(3)

DQ0

I/O

Data bit 0

DQ8

I/O

Data bit 8

DQ1

I/O

Data bit 1

DQ9

I/O

Data bit 9

DQ2

I/O

Data bit 2

DQ10

Data bit 10

Write Potect

HIGH

CD2#

Card Detect 2

LOW

GND

Ground

GND

Ground

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

Symbol

Type

Name and Function

A0 - A25

INPUT

ADDRESS INPUTS: A0 through A25 enable direct addressing of up

to 64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit. (address pins used are based on
card density,see pinout for highest used address pin)

DQ0 - DQ15

INPUT/OUT
PUT

DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and

DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.

CE1#, C E2 #

INPUT

CARD ENA BLE 1 AND 2: CE1# enables even byte accesses, C E2 #
enables odd byte accesses. Multiplexing A0, C E1# and C E2 # allows 8-
bit hosts to access all data on DQ0 - DQ7.

OE#

INPUT

OUTPUT ENA BLE: Active low signal enabling read data from the

memory card.

WE#

INPUT

WRITE ENA BLE: Active low signal gating write data to the memory
card.

RDY/BSY #

OUTPUT

READY/BUSY OUTPUT: Not used for SRAM cards

CD1#, CD2 #

OUTPUT

CARD DETEC T 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.

OUTPUT

WRITE PROTEC T: Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). When
switch is off signal is pulled low.

VPP1, VPP2

N.C.

PROGRAM/ERASE POW ER SUPPLY: Not used for SRAM
cards.

VCC

CARD POW ER SUPPLY: 3.3V / 5.0V for all internal circuitry.

GND

GROUND: for all internal circuitry.

REG #

INPUT

ATTRIBUTE MEMORY SELEC T : only used with cards built with
optional attribute memory.

RST

INPUT

RESET: Not used for SRAM cards

WAIT #

OUTPUT

WAIT: This signal is pulled high internally for compatibility. No wait
states are generated.

BVD1, BVD2

OUTPUT

BA TTERY VOLTAG E DETEC T: Provides status of Battery
voltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)

BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires
extended recharge)

VS1, VS2

OUTPUT

VOLTAG E SENSE: Notifies the host socket of the card's VCC
requirements. VS1is grounded and VS2 is open to indicate a 3.3V/5V
16 bit card, with a 5V key, has been inserted.

RFU

RESERV ED FOR FUTURE USE

N.C.

NO INTERNA L CONNECTION TO CARD: pin may be driven
or left floating

Card Signal Description

SRAM

FUNCTIONAL TRUTH TABLE
READ function

Common Memory

Attribute Memory

Function Mode

/CE2 /CE1

/OE

/WE

/REG D15-D8

D7-D0

/REG D15-D8

D7-D0

Standby Mode

High-Z

Byte Access (8 bits)

High-Z

Even-Byte

High-Z

Even-Byte

High-Z

Odd-Byte

High-Z

Not Valid

Word Access (16 bits)

Odd-Byte Even-Byte

Not Valid Even-Byte

Odd-Byte Only Access

Odd-Byte

High-Z

Not Valid

High-Z

WRITE function
Standby Mode

Byte Access (8 bits)

Even-Byte

Odd-Byte

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

Absolute Maximum Ratings

(2)

Operating Temperature TA (ambient)
Commercial

0°C to +60 °C

Industrial

-40°C to +85 °C

Storage Temperature
Commercial

0°C to +60 °C

Industrial

-40°C to +85 °C

Voltage on any pin relative to VSS

-0.5V to +5.5V (1)

VCC supply Voltage relative to VSS

-0.5V to +7.0V

Notes:
(1) During transitions, inputs may undershoot to
-2.0V or overshoot to VCC +2.0V for periods less
than 20ns.
(2) Stress greater than those listed under
"Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress
rating only and functional operation at these or
any other conditions greater than those indicated
in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.

Sym

Parameter

Density

Notes

Min

Typ

(3)

Max

Units

Test Conditions

64KB

180

128KB

180

256KB

180

512KB

180

ICC

VCC Active Current

1MB

8MB

110

190

VCC = 5.25V
tcycle = 150ns

ICCS

VCC Standby Current

All

2,4

< 0.1

< 1

VCC = 5.25V
Control Signals = VCC

ILI

Input Leakage Current

All

5,6

±20

µA

VCC = VCCMAX
Vin =VCC or VSS

ILO

Output Leakage Current

All

±20

µA

VCC = VCCMAX
Vout =VCC or VSS

VIL

Input Low Voltage

All

0.8

VIH

Input High Voltage

All

3.85

VCC

+0.5

VOL

Output Low Voltage

All

0.4

IOL = 3.2mA

VOH

Output High Voltage

All

VCC-

0.4

VCC

IOH = -2.0mA

Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE

#, CE

#, OE#, WE#, REG#.

3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors.

CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = 5V ± 0.2V

DC Characteristics

(1)

Battery Characteristics

SRV11-14

SRV01-04

Parameter

Density

Notes

Type I

Type I Type II

Units

Conditions

Battery Life

All

(1)

min 10

years

Normal operation, T=25C

256KB

512KB, 1MB

2MB

4MB

6MB

Battery

Backup Time

8MB

(2)

months
(typical)

T=25C
Battery backup time is a
calculated value and is not
guaranteed. This should not be
used to schedule battery
recharging.

Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

5.0V

3.3V

SYM
(PCMCIA)

Parameter

Min

Max

Min

Max

Unit

Read Cycle Time

150

250

(A)

Address Access Time

150

250

(CE)

Card Enable Access Time

150

250

(OE)

Output Enable Access Time

125

(A)

Address Setup Time

(CE)

Card Enable Setup Time

(A)

Address Hold Time

(CE)

Card Enable Hold Time

(A)

Output Hold from Address Change

dis

(CE)

Output Disable Time from CE#

100

dis

(OE)

Output Disable Time from OE#

100

dis

(CE)

Output Enable Time from CE#

dis

(CE)

Output Enable Time from OE#

AC Characteristics

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Read Timing Diagram

NOTE 1

A[25::0], /REG

/CE1, /CE2

/OE

D[15::0]

tc(R)

ta(A)

th(A)

tv(A)

ta(CE)

tsu(CE)

th(CE)

ten(OE)

ta(OE)

tsu(A)

DATA VALID

tdis(CE)

tdis(OE)

Note: Signal may be high or low in this area.

Read Timing Parameters

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

5.0V

3.3V

SYM
(PCMCIA)

Parameter

Min

Max

Min

Max

Unit

Write Cycle Time

150

250

(WE)

Write Pulse Width

150

(A)

Address Setup Time

(A-WEH)

Address Setup Time for WE#

100

180

(CE-WEH)

Card Enable Setup Time for WE#

100

180

(D-WEH)

Data Setup Time for WE#

(D)

Data Hold Time

rec

(WE)

Write Recover Time

dis

(WE)

Output Disable Time from WE#

100

dis

(OE)

Output Disable Time from OE#

100

(WE)

Output Enable Time from WE#

dis

(OE)

Output Enable Time from OE#

(OE-WE)

Output Enable Setup from WE#

(OE-WE)

Output Enable Hold from WE#

(CE)

Card Enable Setup Time from OE#

(CE)

Card Enable Hold Time

Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.

Write Timing Diagram

Write Timing Parameters

th (O E -W E )

N O T E 1

/C E 1 , /C E 2

N O T E 1

ts u (C E -W E H )

tc ( W )

A [2 5 ::0 ], /R E G

tw (W E )

td is (W E )

th (D )

D [1 5 ::0 ](D in )

D A T A IN P U T

ts u (A )

ts u (A -W E H )

/O E

ts u (C E )

ts u ( D -W E H )

tre c (W E )

th (C E )

ts u (O E - W E )

td is (O E )

D [1 5 ::0 ](D o u t)

te n (O E )

te n ( W E )

N O T E 2

/W E

Notes:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host
system.

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

EDI

Company Name

Lot code / trace number

Date code

Part number

PRODUCT MARKING

WED

8P512SRV0100C15 C995 9915

Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.

Card capacity

512 512KB

Packaging option

Standard, type 1

PC card

Standard PCMCIA

Ruggedized PCMCIA

Card family and version

- See Card Family and Version Info. for details (next page)

Temperature range

C Commercial 0°C to +70°C
I Industrial -40°C to +85°C

Card access time

150ns

250ns

Card technology

FLASH

SRAM

PART NUMBERING

512

SRV01

June 2000 Rev. 1 - ECO #12896

PCMCIA Flash Memory Card

SRV Series

PC Card Products

8P XXX SRV YY SS T ZZ

where

XXX:

256

256KB

512

512KB

001

1MB

002

2MB

004

4MB

006

6MB

008

8MB

= Capacities available only in SRV01-SRV04

YY:

no attribute memory, no Write Protect Switch

with attribute memory, no Write Protect Switch

with Write Protect Switch, no attribute memory

with attribute memory, with Write Protect Switch

Extended Battery Backup Time, no attribute memory, no Write Protect Switch

Extended Battery Backup Time, with attribute memory, no Write Protect Switch

Extended Battery Backup Time, with Write Protect Switch, no attribute memory

Extended Battery Backup Time, with attribute memory, with Write Protect Switch

SS:

WEDC SRAM Logo Type I

Blank Housing,

Type I

Blank Housing,

Type I Recessed

WEDC SRAM Logo, Type II

(8MB and extended battery backup time)

Blank Housing,

Type II

(8MB and extended battery backup time)

Blank Housing,

Type II Recessed (8MB and extended battery backup time)

Commercial

Industrial

ZZ:

150ns

Ordering Information

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SRV

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: SRV