Surface Mount Switching Diodes
DO-35 Outline Dimensions
*Silicon Epitaxial Planner Diode
*Fast Switching Diodes
*500 mW Power Dissipation
*Case : DO-35 Glass Case
*Weight : Approx 0.13 gram
Mechanical Data:
Features:
WEITRON
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1N4148/1N4448
SMALL SIGNAL
SWITCHING DIODES
150 m AMPERES
100 VOLTS
DO-35
Unit:mm
D
C
A
B
A
DIM
DO-35
A
Min
26.0
Max
-
B
Min
Max
-
4.20
C
Min
Max
-
0.55
D
Min
Max
-
2.0
Maximum Ratings
( TA=25 C Unless otherwise noted)
Characteristic
Non-Repetitive Peak Voltage
Symbol
V
RM
I
FSM
1N4148/ 1N4448
Unit
V
V
T J TS TG
-65 to +175
Electrical Characteristics
( TA=25 C Unless otherwise noted)
Characteristic
Symbol
V(BR)R
Min
Max
Unit
V
V
1N4148/1N4448
Reverse Recovery Time
IR
IF=10 mA
IF=5 mA
IF=100 mA
VF
I
O
A
m
A
W
m
K/W
C
Forward Voltage
Cj
PF
WEITRON
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Reverse Breakdown Voltage
IR= 100 ua
R JA
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
(1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Operating and Strorage Temperature Range
V
PWM
V
RWM
V
R
P
d
,
100
75
150
2.0
500
300
1N4148
1N4448
Junction Capacitance
Leakage C urrent
V
R
=20V
V
R
=75V
V
R
=75V, Tj=150 C
I
F
=10 mA, I
R
=1mA, V
R
=6V, R
L
=100
Trr
0.62
100
1.0
0.72
1.0
25
5
50
4
4
nA
nS
-
-
-
-
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
@t=1.0us
WEITRON
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1N4148/1N4448
10
4
10
3
10
2
10
1
nA
V
R
=20V
0
100
200
C
2nF
5K
D.U.T.
V
R F
=2V
60
V
O
RECITIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
FIG 1, LEAKAGE CURRENT VERSUS
JUNCTION TEMPERATURE
V =tp /T T =1/fp
I
F R M
tp
T
n=0
0.1
0.2
0.5
10
-4
10
-3
10
-2
10
-4
10
-1
1
10S
tp
1
100
10
0.1
A
I
FRM
FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
WEITRON
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1N4148/1N4448
10
3
10
2
10
1
10
-1
10
-2
0
1
2V
T
J
=100 C
T
J
=25 C
V
F
I
F
mA
FIG 3, FORWARD CHARACTERISTICS
T
A
P
tot
FIG 5, ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
1000
900
800
700
600
500
400
300
200
100
0
0
100
200 C
mW
V
R
FIG 6, RELATIVE CAPACITANCE VERSUS
VOLTAGE
0 2 4 6 8
1.1
1.0
0.9
0.8
0.7
C
tot
(VR)
C
tot
(DV)
I
F
T
F
FIG 4, DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
10
4
10
3
10
1
10
2
10
-2
10
-1
1
10
10
2
T
J
=25 C
f=1KHz
mA
T
J
=25 C
f=1MHz
V
1 0
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