ABSOLUTE MAXIMUM RATINGS(T
A
=25C)
2SB1412
D-PAK(TO-252)
PNP EPITAXIAL PLANAR TRANSISTOR
1.BASE
2.COLLECTOR
3.EMITTER
1
2
3
Symbol
Value
Unit
Rating
Tstg
Tj
P
D
I
C
V
EBO
V
CEO
V
CBO
Storage Temperature
Junction Temperature
Total Device Disspation
Collector Current
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
C
C
W
V
V
A
-55 to +150
+150
1.0
-5
-6
V
-20
-30
Device Marking
2SB1412 = B1412
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Features:
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
* Excellent DC Current Gain Characteristics
* Low V
CE
(Sat)
T
A
= 25C
Lead(Pb)-Free
P b
CLASSIFICATION OF h
FE
Rank
P
Q
R
Range
82 - 180
120 - 270
180 - 390
2SB1412
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
BV
CEO
BV
CBO
-20
-30
-
-
Typ
-
-
V
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
I
C
=-50A, I
E
=0
I
C
=-1.0mA, I
B
=0
BV
EBO
I
CBO
I
EBO
-6
-
-
V
-500
-
-
nA
-500
-
-
nA
Emitter-Base Breakdown Voltage
I
E
=-50A, I
C
=0
Collector Cut-Off Current
V
CB
=-20V, I
E
=0
Emitter-Cut-Off Current
V
EB
=-5V, I
C
=0
ON CHARACTERISTICS
DC Current Gain
V
CE
=-2V, I
C
=-0.5A
Collector-Emitter Saturation Voltage
I
C
=-4A, I
B
=-0.1A
h
FE
82
-
390
-
V
CE(sat)
-
-
-1.0
V
Transition Frequency
V
CE
=-6V, I
E
=-50mA, f=30MHz
Output Capacitance
V
CB
=-20V, I
E
=0, f=1.0MHz
-
120
-
MHz
DYNAMIC CHARACTERISTICS
f
T
-
60
-
pF
C
ob
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2SB1412
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Fig.1 DC current gain vs collector current
h
:
N
I
A
G
T
N
E
R
R
U
C
C
D
E
F
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : -V
CE
(V)
T
A
=
25
C
-2V
-1V
-
1m
-
5m
-
0.01
-
0.05
-
1
-
2
-
5
-
10
-
2m
100
200
500
1k
2k
5k
50
20
10
5
-
0.02
-
0.1
-
0.5
-
0.2
Fig.2 DC current gain vs. collector current
h
:
N
I
A
G
T
N
E
R
R
U
C
C
D
E
F
-1m
-5m -0.01
-0.05
-1 -2 -5 -10
-2m
100
200
500
1k
2k
5k
50
20
10
5
-0.02
-0.1
-0.5
-0.2
25
C
-
25
C
Ta=100
C
V
CE
= -2V
Fig.3 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=50/1
/1
T
A
=25C
40/1
30/1
10/1
V
:
E
G
A
T
L
O
V
N
O
I
T
A
R
U
T
A
S
R
O
T
C
E
L
L
O
C
)
t
a
s
(
E
C
)
V
(
-
1
-
2
-
5
-
10
-
0.01-0.02
-
0.1
-
0.2
-
0.5
-
0.05
-
2m
-
5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
Fig.4 Collector-emitter saturation voltage
vs. collector current
Ta=100C
-25C
25C
l
C
/l
B
=40
V
:
E
G
A
T
L
O
V
N
O
I
T
A
R
U
T
A
S
R
O
T
C
E
L
L
O
C
)
t
a
s
(
E
C
)
V
(
-
1
-
2
-
5
-
10
-
0.01
-
0.02
-
0.1
-
0.2
-
0.5
-
0.05
-
2m
-
5m
-0.01
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-5
Fig.5 Collector output capacitance
vs. collector-base voltage
b
o
C
:
E
C
N
A
T
I
C
A
P
A
C
T
U
P
T
U
O
R
O
T
C
E
L
L
O
C
)
F
p
(
-0.1 -0.2 -0.5 -1 -2
-5 -10 -20 -50
1000
500
200
100
50
10
20
T
A
=25C
f=1MHz
I
E
=0A
I
:
T
N
E
R
R
U
C
R
O
T
C
E
L
L
O
C
C
)
A
(
0.2 0.5 1 2
5 10 20 50 100
500
200
50
5
20
2
10
1
200
m
100
m
50m
20m
10m
500
m
100
Fig.6 Safe operation area
F
C
D
Ta=25C
Single
nonrepetitive
pulse
w
P
=
s
m
01
w
P
=
s
m
00
1
TO-252 Outline Dimensions
unit:mm
2SB1412
Dim
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
TO-252
A
B
C
D
E
G
H
L
M
J
K
1 2 3
4
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A
B
C
D
E
G
H
J
K
L
M
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