ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Symbol
VCEO
VCBO
VEBO
IC(DC)
PNP/2SB772
30
NPN/2SD882
Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/100 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/100 Adc, IC=0)
Collector Cutoff Current (VCE= -30/30 Vdc, I =0)
Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/6.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
-5.0/5.0
-
-
-
-
-
-
-1.0/1.0
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
2SB772
TO-126
Tstg
PD
PD
C
C
WEITRON
http://www.weitron.com.tw
PNP/NPN Epitaxial Planar Transistors
(Ta=25 C)
-40
-5.0
-3.0
40
5.0
3.0
-30
Collector Current (Pulse)
I (Pulse)
I (Pulse)
-7.0
7.0
Adc
Adc
Base Current
(1)
-0.6
0.6
Total Device Dissipation Tc=25 C
10
W
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
Device Marking
2SB772=B772 , 2SD882=D882
-30/30
-40/40
-1.0/1.0
-1.0/1.0
d
NOTE: 1.PW 350us, duty cycle 2%
3.BASE
2.COLLECTOR
1.EMITTER
C
B
B
C
2SD882
Total Device Disspation T =25 C
A
1.0
1
2
3
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
-
-
-
-
-
-
-
2SB772
2SD882
WEITRON
http://www.weitron.com.tw
(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)
DC Current Gain
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
60
400
(1)
(2)
32
-0.5/0.5
-2.0/2.0
80/90
Classification of hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
TYP
-
WEITRON
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2SB772
2SD882
150
100
50
0
F1. Total Power Dissipation VS.
Ambient Temperature
2
4
6
8
10
Ta-Amient Temperature- C
P
T
-
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
-
W
NOTE
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
infin
ite h
ea
t sin
k
100 c
m
25 cm
9 cm
Without heat sink
2
2
2
F3. Thermal Resistance VS.
0.1
0.3
1
3
10
30
100
300 1000
Pulse Width
0.3
1
3
10
30
PW-Pulse Width-ms
4
R
t
h
-
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
-
C
/
W
V
CE
=10V
I =1.0A
C
Duty=0.001
-
I
c
,
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
F4. Safe Operating Areas
Ic(max),DC
Ic(max),Pulse
10m
S
1mS
0.1m
S
V -Collector to Emitter Voltage-V
CE
1
3
6
10
30
60
100
0.01
0.03
0.1
0.3
1
3
10
NOTE
1. Tc=25 C
2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
(Sin
gle n
onre
petiti
ve p
ulse
)
Diss
ipatio
n
Lim
ited
s/b L
imite
d
V
M
A
X
C
E
O
PW
=10
0 us
PW<
-
<
-
10 ms
Duty Cycle 50 %
( )
F5. Collector Current VS. Collector
-Collector-Emitter Voltage(V)
-
I
c
,
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
IB=-1mA
IB=-2mA
IB=-3mA
IB=-4mA
IB=-5mA
IB=-6mA
IB=-7mA
IB=-8MA
IB=-9mA
IB=-10mA
v
CE
To Emitter Voltage
-4
-8
-12
-16
-20
0
-2.0
-1.6
-1.2
-0.8
-0.4
0
Pulse Test
2SB772
F6. Collector Current VS. Collector
-Collector-Emitter Voltage(V)
-
I
c
,
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8MA
IB=9mA
IB=10mA
v
CE
To Emitter Voltage
4
8
12
16
20
0
2.0
1.6
1.2
0.8
0.4
0
Pulse Test
2SD882
Tc,Case Temperature(C)
F.2 Derating Curve for All Types
150
100
0
50
0
100
S/b
limite
d
Dis
sip
ati
on li
mite
d
20
40
60
80
P
e
r
c
e
n
t
a
g
e
o
f
R
a
t
e
d
C
u
r
r
e
n
t
-
%
d
T
-
WEITRON
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2SB772
2SD882
F7.
Ic-Collector Current(A)
0.001 0.003 0.01 0.03
0.1
0.3
1
3
10
1
3
6
10
30
60
100
300
600
1000
h ,
FE
h
,
F
E
V -I
BE
c
-
D
C
C
u
r
r
e
n
t
G
a
i
n
V
CE
=2.0V
Puse Test
2SB772
2SB772
2SD882
2SD882
V
BE
h
FE
Ic-Collector Current(A)
F8.
V
CE
(sa
t)
V
BE
(sat)
0.003
0.01
0.01
0.03
0.03
0.1
0.1
0.3
0.3
1
1
3
3
10
10
0.001
0.003
0.006
0.06
0.6
6
V , V ,
CE(sat)
V
-
C
o
l
l
e
c
t
o
r
S
a
t
u
r
a
t
i
o
n
V
o
l
t
a
g
e
(
V
)
C
E
(
s
a
t
)
BE(sat)
V
-
B
a
s
e
S
a
t
u
r
a
t
i
o
n
V
o
l
t
a
g
e
(
V
)
B
E
(
s
a
t
)
-Ic
2SB772
2SD882
Ic-Collector Current(A)
F9. f - I
T
c
0.01
0.03
0.1
0.3
1
1
3
10
30
100
300
1000
f
-
G
a
i
n
B
a
n
d
w
i
d
t
h
P
r
o
d
u
c
t
(
M
H
Z
)
T
2SB772
2SD882
V =5.0V
CE
Forecd air
Cooling
(with heat sink)
F10.
1
3
6
10
30
60
3
6
10
30
C -V , C -V
ob
ib
CB
CE
60
100
300
V -Collector to Base Voltage(V)
V -Emitter to Base Voltage(V)
CB
EB
C
i
b
-
I
n
p
u
t
C
a
p
a
c
i
t
a
n
c
e
(
P
)
C
o
b
-
O
u
t
p
u
t
C
a
p
a
c
i
t
a
n
c
e
(
P
)
F
F
f=1.0MHz
I =0(Cob)
I =0(Cib)
E
C
2SD882
2SB772
2SB772
Cob
Cib
2SD882
2SB772
2SD
882
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.900
1.500
0.860
1.370
0.600
7.800
11.000
TO-126
S
TO-126 Outline Dimensions
unit:mm
2SB772
2SD882
G
E
A
B
C
D
H
S
L
M
J
K
MAX
2.290TYP
4.480
15.300
2.100
3.900
4.680
15.700
2.300
4.100
3.000
3.200
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