ABSOLUTE MAXIMUM RATINGS(Ta=25C)
2SC5706
D-PAK(TO-252)
NPN EPITAXIAL PLANAR TRANSISTOR
1.BASE
2.COLLECTOR
3.EMITTER
1
2
3
Lead(Pb)-Free
P b
Symbol
Value
Unit
Rating
Tstg
Tj
P
D
I
C
(DC)
V
EBO
V
CES
V
CEO
V
CBO
Storage Temperature
Junction Temperature
Total Device Disspation
Collector Current
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector to Base Voltage
I
C
(Pulse)
C
C
W
V
V
V
A
-55 to +150
+150
0.8
15
7.5
I
B
A
Base Current
1.2
5
6
80
V
50
80
Device Marking
2SC5706 = 5706
WEITRON
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25-Aug-05
Features:
Mechanical Data:
* Large current capacitance
* Low collector-to-emitter saturation voltage
* High-speed switching
* High allowable dissipation
* Case : Molded Plastic
* Weight : 0.925 grams
T
A
= 25C
T
C
= 25C
2SC5706
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
BV
CEO
BV
CES
BV
CBO
50
80
80
-
-
-
Max
-
-
-
V
V
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
I
C
=10A, I
E
=0
I
C
=100A, R
BE
=0
I
C
=1mA, R
BE
=
BV
EBO
I
CBO
I
EBO
6
-
-
V
1
-
-
A
1
-
-
A
Emitter-Base Breakdown Voltage
I
E
=10A, I
C
=0
Collector Cut-Off Current
V
CB
=40V, I
E
=0
Emitter-Cut-Off Current
V
EB
=4V, I
C
=0
ON CHARACTERISTICS
(1)
DC Current Gain
V
CE
=2V, I
C
=500mA
Collector-Emitter Saturation Voltage
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=100mA
Base-Emitter Saturation Voltage
I
C
=2A, I
B
=100mA
h
FE
200
-
560
-
V
CE(sat)
V
BE(sat)
-
-
-
-
135
240
mV
-
-
1.2
V
Note 1.Pulse Test : Pulse width < 300s, Duty cycle 20%.
Transition Frequency
V
CE
=10V, I
C
=500
Output Capacitance
V
CB
=10V, f=1MHz
-
400
-
MHz
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
f
T
-
15
-
pF
C
ob
-
35
-
ns
t
on
-
300
-
t
stg
-
20
-
t
f
See specified test circuit (Turn-On Time)
See specified test circuit (Storage Time)
See specified test circuit (Fall Time)
WEITRON
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25-Aug-05
2SC5706
PW=20s
D.C. 1%
INPUT
Switching Time Test Circuit
OUTPUT
50
25
VCC=25V
VBE=-5V
10IB1 = -10IB2 = IC = 1A
100F
470F
RB
VR
+
+
IB1
IB2
0 0.4 0.8 1.0 1.2 1.4
1
0
2
3
4
5
I
B
=0
5mA
10mA
20mA
30mA
40mA
50mA
60mA
70mA
80mA
90mA
100mA
Characteristics Curve
Collector-to-Emitter Voltage, V
CE
(V)
FIG.1 I
C
- V
CE
FIG.2 I
C
- V
BE
Collector
Curr
ent, I
C
(A)
DC Curr
ent Gain, h
FE
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
CE
=2V
I
C
/ I
B
= 20
V
CE
=2V
Ta=75C 25C -25C
Ta=75C
25C
-25C
Ta=75C
25C
-25C
Base-to-Emitter Voltage, V
BE
(V)
Collector Current, I
C
(A)
FIG.3 h
FE
- I
C
FIG.4 V
CE(sat)
- I
C
Collector Current, I
C
(A)
Collector Current, I
C
(A)
FIG.5 V
CE(sat)
- I
C
FIG.6 V
BE(sat)
- I
C
Collector Current, I
C
(A)
Collector
Curr
ent, I
C
(A)
Collector
-to-Emitter
Saturation V
oltage, V
CE(sat)
(mV)
Collector
-to-Emitter
Saturation V
oltage, V
CE(sat)
(mV)
Base-to-Emitter Saturation V
oltage, V
BE(sat)
(V)
0.01 0.1 1.0 10
10
100
1000
0.01 0.1 1.0 10
10
100
0.01 0.1 1.0 10
1.0
10
0.1
0.01 0.1 1.0 10
10
100
1000
10000
1000
Ta=-25C
25C
75C
I
C
/ I
B
= 50
I
C
/ I
B
= 50
Ta=75C
25C
-25C
WEITRON
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V
CE
=10V
0.01
Collector Current, I
C
(A)
Gain-Bandwidth Pr
oduct, f
T
- MHz
0.1
1.0
10
10
0 20 40 60 80 100 120 140 160
0
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
14
16
18
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
1000
FIG.8 f
T
- I
C
Collector-to-Base Voltage, V
CB
(V)
Output Capacitance,
C
ob
(pF)
Collector
Curr
ent, I
C
(A)
FIG.7 C
ob
- V
CB
Collector-to-Base Voltage, V
CB
(V)
FIG.9 ASO
Collector
Dissipation, P
C
(W)
Ambient Temperature, T
a
(C)
FIG.9 P
C
- T
a
Collector
Dissipation, P
C
(W)
Case Temperature, T
C
(C)
FIG.10 P
C
- T
C
f = 1MHz
0.1
0.1
10
100
10
100
100
1000
T
C
= 25C
Single Puls
0.1
1.0
10
100
0.01
0.1
1.0
10
I
CP
= 7.5A
I
C
= 5A
100ms
10ms
100s
DC operation(T
c
=25C)
DC operation(T
a
=25C)
No heat sink
100s
1ms
2SC5706
WEITRON
http://www.weitron.com.tw
4/5
25-Aug-05
D-PAK Outline Dimensions
unit:mm
Dim
Min
Max
D-PAK
A
B
C
D
E
G
H
L
M
J
K
1 2 3
4
WEITRON
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5/5
25-Aug-05
2SC5706
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
A
B
C
D
E
G
H
J
K
L
M
D-PAK(TO-252)
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