ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limits
Unit
Rating
Symbol
Parameter
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage(Ic=1mA,I =0 )
Collector-Base Breakdown Voltage(Ic=50uA, I =0)
Emitter-Base Breakdown Voltage(I =50uA, I =0)
Collector Cutoff Current(V =80V, I =0)
Emitter Cutoff Current(V =4V, I =0)
CEO
CBO
EBO
ICBO
IEBO
2SD1898
Tstg
P
WEITRON
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Epitaxial Planar NPN Transistors
(Ta=25 )
100
80
5
1
2
0.5
Collector Power Dissipation
I
I
A(DC)
W
Junction Temperature,
T ,j
150,
Storage Temperature
-55 to +150
C
CP
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
C
C
Collector Current
C
VCBO
VCEO
VEBO
A (Pulse)*
Vdc
Vdc
Vdc
* Single pulse Pw = 20ms
BV
BV
BV
100
80
5
-
-
-
-
-
1
1
-
-
-
-
-
V
V
V
uA
uA
%
(Ta=25
unless otherwise noted
)
C
E
CB
EB
E
E
B
C
C
WEITRON
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CLASSIFICATION OF h
ELECTRICAL CHARACTERISTIC CURVES
FE
Rank
P
Q
Range
Marking
DF
82-180
120-270
R
180-390
2SD1898
ELECTRICAL CHARACTERISTICS
%
(Ta=25
unless otherwise noted
)
C
(Countinued)
Symbol
Parameter
Min Typ Max Unit
Collector-Emitter Saturation Voltage (Ic=500mA, I =20mA)
DC Current Gain (V =3V, Ic=500mA)
Transition Frequency (V =10V, Ic=50mA, f=100MHz)
Output Capacitance (V =10V, I =0A, f=1MHz)
FE
CE(sat)
T
Cob
f
h
V
82
-
-
-
390
-
-
-
-
0.4
100
20
-
MHz
pF
V
CE
B
CE
CB
E
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
m
A
)
B AS E T O E MIT T E R V OLT AG E : V
B E
(V )
FIG.1 Grounded Emitter Propagation
Characteristics
1000
100
10
1
T a=25
C
V
C E
=5V
2
4
0
8
10
6
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
A
)
C OLLE C T OR T O E MIT T E R V OLT AG E : V
C E
(
V )
FIG.2 Grounded Emitter Output
Characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
I
B
=0mA
T a=25
C
WEITRON
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2SD1898
0
100
1000
100
0
10
1000
D
C
C
U
R
R
E
N
T
G
A
I
N
:
h
F
E
C O LLE C T O R C UR R E NT : I
C
(
mA)
FIG.3 DC Current Gain vs.
Collector Current
T a=25
C
V
C E
=3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
100
0
10
1000
C
O
L
L
E
C
T
O
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
:
V
C
E
(
s
a
t
)
(
V
)
C OLLE C T OR C UR R E NT : I
C
(
mA)
FIG.4 Collector-Emitter Ssaturation
Voltage vs. Collector Current
I
C
/I
B
=20/1
T a=25
C
10/1
1
2
5
10
20
50 100 200 500 1000
T
R
A
N
S
I
T
I
O
N
F
R
E
Q
U
E
N
C
Y
:
f
T
(
M
H
z
)
E MIT T E R C UR R E NT :
-I
E
(mA)
FIG.5 Gain Bandwidth Product vs.
Emitter Current
500
200
100
50
20
10
5
2
T a=25
C
V
C E
=5V
0.1 0.2
0.5
1
2
5
10
20
50 100
C
O
L
L
E
C
T
O
R
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
:
C
o
b
(
p
F
)
E
M
I
T
T
E
R
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
:
C
i
b
(
p
F
)
C OLLE C T OR T O B AS E V OLT AG E : V
C B
(
V )
E MIT T E R T O B AS E V OLT AG E : V
E B
(
V )
FIG.6 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
100
1000
10
1
T a=25
C
f=1MHz
I
E
=0A
Ic=0A
Ic Max (P uls e)
T a=25
C
S ingle
non-repetitive
puls e
Pw
=1
0m
S
Pw
=10
0m
S
DC
C O LLE C T O R T O E MIT T E R V O LT AG E : V
C E
(
V )
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
A
)
0.1 0.2 0.5 1
2
5 10 20
50 100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
FIG.7 Safe Operating Area
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions
unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP
2SD1898
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