NPN Plastic-Encapsulate Transistor
Note:
2SD2098Q=AHQ, 2SD2098R=AHR
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
2SD2098
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 50 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 50 Adc, IC=0)
Collector Cutoff Current (VCB= 40 Vdc, IE=0)
Emitter Cutoff Current (VEB=5.0 Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
6.0
-
-
-
-
-
0.5
Vdc
Vdc
Vdc
uAdc
uAdc
20
50
0.5
C
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS
%
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
Rating
, Tstg
P
(Ta=25 )
20
50
6.0
5.0
10
0.5
Collector Power Dissipation
I
I
Adc(DC)
W
Junction Temperature,
Tj
Storage Temperature
-55 to +150
C
CP
C
Collector Current
C
VCEO
VCBO
VEBO
%
C
Adc (Pulse)
Vdc
Vdc
Vdc
150,
(1)
1. Single pulse pw=10ms
Transition Frequency
(IE=-50 mAdc, VCE=6.0 Vdc,f=100 MHz)
Output Capacitance
(IE=0 Adc, VCE=20 Vdc,f=1 MHz)
fT
Cob
DC Current Gain
(IC=0.5 Adc, VCE=2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=100 mAdc, IB=4 Adc)
VCE(sat)
-
-
150
35
-
-
-
-
-
390
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
2SD2098
hFE
120
MHz
P
CLASSIFICATION OF h FE
Item
Range
Q
120-270
1.0
0.3
WEITRON
http://www.weitron.com.tw
Typ
R
180-390
F
2SD2098
WEITRON
http://www.weitron.com.tw
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V ,BASE TO EMITTER VOLTAGE (V)
V ,COLLECTOR TO EMITTER VOLTAGE(V)
I ,COLLECTOR CURRENT(A)
FIG.1 Grounded Emitter Propagation
Characteristics
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
FIG.2 Grounded Emitter Output
Characteristics
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.010.020.050.1 0.2 0.5 1 2
5 10
FIG.3 DC Current Gain vs.
Collector Current
5m0.01 0.02 0.05
0.2 0.5 1
2m
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2
5 10
FIG.4 Collector-Emitter
Saturation Voltage vs.
Collector Current
0.1
I
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
A
)
C
I
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
A
)
C
BE
CE
C
I ,COLLECTOR CURRENT(A)
C
V
,
C
O
L
L
E
C
T
O
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
C
E
(
s
a
t
)
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
25 C
-25 C
V =2V
50mA
45mA
30mA
25mA
20mA
15mA
10mA
5mA
40mA
35mA
CE
I =0mA
B
40
30
10
I /I =50
C B
V =5V
2V
1V
CE
T =100 C
a
T =25 C
a
T =25 C
a
T =25 C
a
I ,EMITTER CURRENT(A)
E
V ,COLLECTOR TO BASE VOLTAGE(V)
CB
V ,EMITTER TO BASE VOLTAGE(V)
EB
f
,
T
R
A
N
S
I
T
I
O
N
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
T
C
,
C
O
L
L
E
C
T
O
R
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
F
)
C
,
E
M
I
T
T
E
R
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
(
F
)
o
b
i
b
P
P
1m 2m 5m 10m 20m 50m 0.1 0.2 0.5 1
1000
500
200
50
20
100
10
2
5
1
FIG.5 Gain Bandwidth Product vs.
Emitter Current
FIG.6 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
10
20
50
100
200
500
1000
0.1 0.2 0.5 1
2
5 10 20
50
V =6V
CE
T =25 C
a
f=1MHz
I =0A
I =0A
Cob
Cib
T =25 C
a
E
C
2SD2098
WEITRON
http://www.weitron.com.tw
V ,COLLECTOR TO EMITTER VOLTAGE(V)
I
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
A
)
C
CE
0.2 0.5 1 2 5 10 20 50100
500
200
50
5
20
2
10
1
200m
100m
50m
20m
10m
500m
FIG.7 Safe Operating Area
Pw
=10
0m
s
DC
Pw
=10
0m
s
Pw
=10
ms
Pw
=1m
s
Ic max(Pulse)
T =100 C
Single pulse
a
Recommended land
pattern
WEITRON
http://www.weitron.com.tw
2SD2098
Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions
unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP
PDF 
ZIP