ABSOLUTE MAXIMUM RATINGS(TA=25C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
2SD669
2SD669A
Unit
180
V
V
V
Rating
2SD669/2SD669A
TO-126C
T
stg
C
C
NPN Epitaxial Planar Transistors
120
5.0
160
5.0
180
1.0
150
W
A
Junction Temperature
Storage , Temperature
-55 to +150
1. EMITTER
2. COLLECTOR
3. BASE
Power Disspation
1.5
1
2
3
Lead(Pb)-Free
P b
WEITRON
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1/5
18-Oct-05
Transition frequency
V
CE
= 5.0V, I
C
= 150mA
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
h
FE(1)
V
CE(sat)
C
ob
f
T
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25C unless otherwise noted) (Countinued)
-
-
-
WEITRON
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DC Current Gain
V
CE
= 5.0V, I
C
= 150mA
V
CE
= 5.0V, I
C
= 500mA
60
60
1.0
320
200
-
-
Base-Emitter ON Voltage
V
CE
= 5.0V, I
C
= 150mA
V
BE(ON)
V
-
1.5
-
-
-
-
140
Characteristics
Symbol
Min
Typ
Max
Unit
Emitter Cutoff Current
V
EB
= 4.0V, I
C
=0
Collector Cutoff Current
V
CB
= 160V, I
E
=0
Collector-Base Breakdown Voltage
I
C
= 10mA, I
B
= 0
Collector-Emitter Breakdown Voltage
I
C
= 1.0mA, I
E
= 0
Emitter-Base Breakdown Voltage
I
C
= 0, I
E
= 1.0mA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CBO
10
10
V
V
V
A
mA
2SD669
2SD669A
2SD669
2SD669A
180
120
160
5.0
-
-
-
-
-
-
-
-
-
-
MHz
-
-
14
pF
2SD669/2SD669A
2/5
18-Oct-05
Collecotr Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
h
FE(2)
30
Range
60-120
60-120
CLASSIFICATION OF h
FE(1)
100-200
Rank
B
C
D
160-320
100-200
-
2SD669A
2SD669
WEITRON
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2SD669/2SD669A
3/5
18-Oct-05
Fig.1 Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(C)
P
n
o
i
t
a
p
i
s
s
i
d
r
e
w
o
p
r
o
t
c
e
l
l
o
C
C
)
W
(
3
1.0
0.3
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
(
0.01
0.03
0.1
3
30
10
300
1
100
Collector to emitter voltage V
CE
(V)
Fig.2 Area of Safe Operation
DC Operation(T
C
= 25C)
(13.3 V, 1.5 A)
(40 V, 0.5 A)
(120 V, 0.04 A)
(160 V, 0.02A)
2SD669A
2SD669
5
.
3
5.
5
0
.
4
5
.
4
0
.
5
Fig.3 Typical Output Characteristecs
T
C
= 25C
P
C
W
0
2
=
I
B
= 0
A
m
5
.
0
0
.
1
5
.
1
0
.
2
5
.
2
0
.
3
1.0
0.8
0.6
0.4
0.2
0
10
20
Collector to emitter voltage V
CE
(V)
50
40
30
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
(
Fig.4 Typical Transfer Characteristics
500
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
m
(
Base to emitter voltage V
BE
(V)
V
CE
= 5 V
57
=
aT
C
52 52
300
250
200
150
100
50
1
1
30
h
o
i
t
a
r
r
e
f
s
n
a
r
t
t
n
e
r
r
u
c
C
D
E
F
300
100
10
3
Collector current I
C
(mA)
1,000 3,000
Fig.5 DC Current Transfer Ratio
vs. Collector Current
V
CE
= 5 V
5
7
=
a
T
C
5
2
5
2
1.2
1.0
0.8
0.6
0.4
0
0.2
1
3
30
300
10
100
1,000
Fig.6 Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current I
C
(mA)
V
e
g
a
t
l
o
v
n
o
i
t
a
r
u
t
a
s
r
e
t
t
i
m
e
o
t
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
)
V
(
52
5
2
T
C
57
=
C
I
C
= 10 I
B
WEITRON
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2SD669/2SD669A
4/5
18-Oct-05
1.2
1.0
0.8
0.6
0.4
0
0.2
1
3
30
300
10
100
1,000
Fig.7 Base to Emitter ON Voltage
vs. Collector Current
Collector current I
C
(mA)
V
e
g
a
t
l
o
v
er ON
t
t
i
m
e
o
t
e
s
a
B
)
ON(
E
B
)
V
(
I
C
= 10 I
B
5
7
5
2
T
C
5
2
=
C
240
200
160
120
80
40
0
10
300
f
t
c
u
d
o
r
p
h
t
d
i
w
d
n
a
b
n
i
a
G
T
)
z
H
M
(
1,000
100
30
Collector current I
C
(mA)
Fig.8 Gain Bandwidth Product
vs. Collector Current
V
CE
= 5 V
Ta = 25C
200
100
50
20
10
5
2
1
10
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
t
u
o
r
o
t
c
e
l
l
o
C
b
o
)
F
p
(
50
20
5
2
Collector to base voltage V
CB
(V)
100
Fig.9 Collector Output Capacitance
vs. Collector to Base Voltage
f = 1 MHz
I
E
= 0
WEITRON
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TO-126C Outline Dimensions
unit:mm
2SD669/2SD669A
5/5
18-Oct-05
Min
Max
A
3.000
3.400
A1
1.800
2.200
b
0.660
0.860
b1
1.170
1.370
c
0.450
0.600
D
7.800
8.200
E
10.800
11.200
e
e1
4.460
4.660
L
15.100
15.500
L1
1.300
1.500
P
4.040
4.240
1
2.700
2.900
2
3.100
3.300
Dim
TO-126C
2.280 TYP
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