ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
Vdc
Vdc
Adc
Rating
3DD13002B
Tstg
PD
C
C
WEITRON
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Switch Mode NPN Transistors
(Ta=25 C)
600
6.0
1.0
400
Total Device Dissipation T =25 C
1.0
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
A
TO-92
1
2
3
1. EMITTER
2. COLLECTOR
3. BASE
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 600 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
6.0
-
-
-
-
-
100
Vdc
Vdc
Vdc
uAdc
uAdc
400
600
100
d
C
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
fT
5.0
2.5
0.5
Storage Time
Fall Time
-
-
-
MHz
us
us
DC Current Gain
(IC= 100 mAdc, VCE=10Vdc)
(IC= 200 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
-
-
-
Vdc
Vdc
20
9
25
40
On Characteristics
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
1.1
-
-
3DD13002B
WE IT R ON
WEITRON
http://www.weitron.com.tw
(IC= 200 mAdc, IB= 40 mAdc)
(IC= 10 mAdc, VCE= 10Vdc)
hFE(3)
6
.
0.8
Switching Characteristics
t
V =100V, I =1A
s
tf
CC
C
I =-I =200mA
B1
B2
Rank
9-15
15-20
20-25
25-30
30-35
35-40
Range
Classification of h
FE(2)
WEITRON
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3DD13002B
WE IT R ON
FIG.1 DC Current Gain
FIG.3 Base-Emitter Voltage
FIG.5 Active Region Safe Operation Area
FIG.6 Reverse Bias Safe Operating Area
FIG.2 Collector Saturation Region
FIG.4 Collector-Emitter Saturation Region
C
B
I , COLLECTOR CURRENT(AMP)
C
I
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
A
M
P
)
C
I
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
A
M
P
)
C
CE
I , COLLECTOR CURRENT(AMP)
C
I , COLLECTOR CURRENT(AMP)
V ,COLLECTOR-EMITTER VOLTAGE(V)
CE
V ,COLLECTOR-EMITTER CLAMP VOLTAGE(V)
I , BASE CURRENT(AMP)
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
V
,
V
O
L
T
A
G
E
(
V
)
V
,
V
O
L
T
A
G
E
(
V
)
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
F
E
C
E
0.01
3.5
3.0
2.0
1.4
1.2
1
0.8
0.6
0.02
4
0.05
0.1
0.7
2
10
0.01 0.02
0.05
1.2
0.4
0
80
0.1 0.2
0.5
1
2
0.8
20
0.07
0.3
0.5
1.6
0.005
0.002
0.4
0
1.0
6
0.03
0.2
0.5
1
2
0.03
0.1
0.7
0.07
2
0.02
0.05
0.3
0.2
0.5
1
1.5
2.5
60
40
30
8
0.1
2
0.5
1
25 C
V =2V
CE
I =0.2A
C
T =25 C
J
25 C
V @I /I =5
BE(sat)
C B
I /I =5
C B
1.6
0
800
0.4
100
300
500
700
0
0.8
1.2
5
5
0.01
10
500
1
0.5
2
0.2
0.0
5
0.02
20
50
100
200
0.1
300
200
400
600
10
T =25 C
C
V =6V
5V
3V
1.5V
BE(off)
T 100 C
J
<_
I =1A
B1
WEITRON
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3DD13002B
WE IT R ON
FIG.7 Forward Bias Power Derating
C
T , CASE TEMPERATURE( C)
P
O
W
E
R
D
E
R
A
T
I
N
G
F
A
C
T
O
R
0
40
120
160
0.6
1
0.8
0.4
0.2
60
100
140
80
20
THERMAL
DERATING
WEITRON
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3DD13002B
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
TO-92
TO-92 Outline Dimensions
unit:mm
3.70
1.40
0.55
0.51
4.70
-
4.70
2.64
14.50
1.270TYP
E
C
H
A
B
D
L
J
K
G
2.44
14.10
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