General Purpose Transistor
PNP Silicon
1.F R -5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
BC807-16/
Maximum Ratings
Emitter-Base VOltage
Symbol
Value
Unit
Rating
IC
VCBO
VEBO
-50
-5.0
500
mAdc
V
V
V
( T
A
=25 C unless otherwise noted)
1
2
3
MARKING DIAGRAM
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WEITRON
q
R JA
q
BC807-25
BC807-40
-45
Collector-Base Voltage
Collector-Emitter Voltage
VCEO
Collector Current-Continuous
Device Marking
BC807-17=5A, BC807-25=5B, BC807-40=5C
WEITRON
WE IT R ON
BC807-16/BC807-25
V
V
DC Current Gain
(IC= -100mA, VCE=-1.0V)
(IC= -500mA,VCE=-1.0V)
Collector-Emitter Saturation Voltage
(IC= -500mA, IB=50mA)
Base-Emitter On Voltage
(IC= -500mA, IB=-1.0V)
hFE
VCE(sat)
VBE(on)
On Characteristics
-
-
-
-
-
-
-
-
-
-0.7
-1.2
-
-
-
-
-
-
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
fT
Cobo
MHz
pF
100
-
10
-
-
-
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Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Typ
BC807-40
BC807-16
BC807-25
BC807-40
100
160
250
40
250
400
600
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Typ
Collector-Emitter Breakdown Voltage
(I
C
= -10mA)
Collector-Emitter Breakdown Voltage
(I
C
=-10 A ,VEB=0)
Emitter-Base Breakdown Voltage
(I
E
=-1.0 A)
Collector Cutoff Current (V
CB
=20V)
(VCB=20V, TA=150 C)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
nA
m
A
Off Characteristics
V
V
V
-45
-50
-5.0
-
-
-
-
-
-
-
-
-
-
100
5.0
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. T emperature Coefficients
+1.0
IC, COLLECTOR CURRENT
Figure 5. Capacitances
-0.1
-1.0
-1.0
-10
-100
-1000
-2.0
-1.0
0
V C
E,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
/C
)
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-10
-100
-1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
-10
-1000
-100
-10
-100
TJ = 25 C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
TA = 25C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -1.0 V
VCE(sat) @ IC/IB = 10
VC for VCE(sat)
VB for VBE
Cob
Cib
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
h F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
1000
10
-1000
-0.1
-10
-100
100
-1.0
VCE = -1.0 V
TA = 25 C
"
"
q
q
q
WEITRON
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BC807-16/BC807-25
BC807-40
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
S OT -23
SOT-23 Package Outline Dimension
BC807-16/BC807-25
BC807-40
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