General Purpose Transistor
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
Value
45
Unit
Rating
1
2
3
3
BASE
COLLECTOR
EMITTER
IC
VCBO
VEBO
50
6.0
mAdc
Vdc
Vdc
Vdc
Collector Current-Continuous
100
1.FR-5=1.0 x 0.75 x 0.062 in.
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
(1)
150
2.4
833
-55 to +150
SC-89
(SOT-523F)
3
2
1
NPN Silicon
BC847A=1E; BC847B=1F;BC847C=1G
BC847AT/BT/CT
WEITRON
http://www.weitron.com.tw
WE IT R ON
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc,
Rs=2.0 k ,
f=1.0 kHz, BW=200Hz)
fT
Cobo
NF
MHz
pF
100
-
-
-
-
-
-
-
-
4.5
10
dB
V
V
V
DC Current Gain
(IC= 10uA, VCE=5.0V)
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
hFE
VCE(sat)
VBE(sat)
VBE(on)
On Characteristics
110
200
420
-
-
-
-
-
-
660
-
-
-
580
-
90
150
270
0.7
0.9
220
450
800
0.25
0.6
700
770
-
-
-
-
-
-
-
-
-
-
-
(IC= 2.0mA, VCE=5.0V)
180
290
520
BC847AT/BT/CT
Collector-Emitter Breakdown Voltage
(IC= 10mA)
Collector-Emitter Breakdown Voltage
(IC=10 uA ,VEB=0)
Collector-Base Breakdown Voltage
(I
C
=10 uA)
Emitter-Base Breakdown Voltage
(IE=1.0 uA)
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
V(BR)CEO
45
50
50
6.0
15
5.0
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
nA
mA
V
V
V
V
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Typ
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
BC847A
BC847B
BC847C
BC847A
BC847B
BC847C
-
-
-
-
-
-
WEITRON
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FIG.5 Capacitances
VR, REVERSE VOLTAGE (VOLTS)
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
10
7.0
5.0
3.0
2.0
1.0
Cib
TA=25 C
Cob
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
FIG.6 Current-Gain- Bandwidth Product
f T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
z
)
400
300
200
100
80
60
40
20
30
V
CE
=10V
T
A
= 25 C
FIG.1 Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
h F
E
,
N
O
R
M
A
L
I
Z
E
D
D
C
C
U
R
R
E
N
T
G
A
I
N
0.2
0.5 1.0
2.0
5.0
10
20
50
100 200
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
VCE=10V
TA=25 C
FIG.2 "Saturation" And "On" Voltage
IC, COLLECTOR CURRENT (mAdc)
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TA=25 C
VBE
(sat)
@IC/BC=10
VBE
(ON)
@VCE= 10V
VCE
(sat)
@IC/BC=10
FIG.3 Collector Saturation Region
IB, BASE CURRENT (mA)
V
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
TA=25 C
IC= 200mA
IC=-50mA
IC= 20mA
IC=
10mA
IC= 100mA
0.02
0.1
1.0
10
20
2.0
1.6
1.2
0.8
0.4
0
q V
B
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
C
)
-55 C to +125 C
1.0
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
FIG.4 Base-Emitter Temperature Coefficient
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Unit:mm
SC-89 Outline Demensions
A
1
2
3
B
G
D
J
N
M
K
C
T OP VIE W
S
Dim
A
B
C
D
G
J
K
M
Min
1.50
0.75
0.60
0.23
Nom
1.60
0.85
0.70
0.28
Max
1.70
0.95
0.80
0.33
SC-89
0.50BSC
0.10
0.15
0.20
0.30
1.50
0.40
0.50
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10
10
N
S
1.60
1.70
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