ABSOLUTE MAXIMUM RATINGS(TA=25C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
BD233
BD235
BD237
Unit
100
V
V
V
Rating
Device Marking
BD233/235/237
TO-126
T
stg
C
C
NPN Epitaxial Planar Transistors
45
60
5.0
80
5.0
45
60
5.0
1.25
150
W
A
Junction Temperature
Storage , Temperature
-65 to +150
BD233 = BD233 , BD235 = BD235 , BD237 = BD237
1. EMITTER
2. COLLECTOR
3. BASE
Power Disspation
2.0
1
2
3
Lead(Pb)-Free
P b
WEITRON
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Transition frequency
V
CE
= 10V, I
C
= 250mA, f = 10MHz
Collector-Emitter Saturation Voltage
I
C
= 1.0A, I
B
= 100mA
h
FE(1)
h
FE(2)
V
CE(sat)
fT
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25C unless otherwise noted) (Countinued)
-
3.0
-
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DC Current Gain
V
CE
= 2.0V, I
C
= 150mA
V
CE
= 2.0V, I
C
= 1.0A
40
25
0.6
-
-
Characteristics
Symbol
Min
Max
Unit
Emitter Cutoff Current
V
EB
= 5.0V, I
C
=0
Collector Cutoff Current
V
CB
= 45V, I
E
=0
V
CB
= 60V, I
E
=0
V
CB
= 100V, I
E
=0
Collector-Base Breakdown Voltage
I
C
= 10mA, I
B
= 0
Collector-Emitter Breakdown Voltage
I
C
= 100A, I
E
= 0
Emitter-Base Breakdown Voltage
I
C
= 0, I
E
= 100A
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CBO
1.0
100
V
V
V
A
mA
BD233/235/237
BD233
BD235
BD237
45
60
100
45
60
80
5.0
-
-
-
-
-
BD233
BD235
BD237
BD233
BD235
BD237
MHz
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.900
1.500
0.860
1.370
0.600
7.800
11.000
TO-126
S
TO-126 Outline Dimensions
unit:mm
G
E
A
B
C
D
H
S
L
M
J
K
MAX
2.290TYP
4.480
15.300
2.100
3.900
4.680
15.700
2.300
4.100
3.000
3.200
BD233/235/237
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