Электронный компонент: C945

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WEITRON

C945

NPN Transistors

Lead(Pb)-Free

P b

TO-92

1

2

3

1. EMITTER

2. COLLECTOR

3. BASE

1/4

08-Feb-06

�C

�C

Junction Temperature

Tj

T

STG

+150

0.4

Storage Temperature

-40 to + 150

Collector Output Capacitance
V

CB

= 10V, I

E

= 0, f = 1MHz

Noise figure
V

CE

= 6V, I

C

= 0.1mA, Rg = 10k, f = 1KMHz

TransitionFrequence
V

CE

= 6V, I

C

= 10mA, f = 30MHz

-

-

-

-

-

-

-

-

700

V

ON CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(TA=25 C unless otherwise noted) (Countinued)

70
40

CLASSIFICATION OF hFE1

Rank

Range

Y

O

70-140

0.3

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V

BE(sat)

V

1.0

200

-

3.0

pF

-

4.0

10

dB

-

BL

GR

120-240

200-400

350-700

Cob

NF

MHz

V

CE(sat)

f

T

Base-Emitter Voltage
I

C

=100mA, I

B

=10mA

h

FE1

h

FE2

DC Current Gain
V

CE

=6.0V, I

C

=1mA

V

CE

=6.0V, I

C

=0.1mA

Collector-Emitter Saturation Voltage
I

C

=100mA, I

B

=10mA

C945

2/4

08-Feb-06

Characteristics

Symbol

Min

Typ

Max

Unit

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C945

3/4

08-Feb-06

FIG1. Total Power Dissipation

vs Ambient Temperature

FIG.2 Collector Current vs Collector

to Emitter Voltage

FIG.4 Gain Bandwidth Product vs

Emitter Current

vs Collector Current

FIG.3 Collector and Bade Saturation Voltage

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Dim

A

B

C

D

E

G

H

J

K

L

Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30

Max

TO-92

TO-92 Outline Dimensions

unit:mm

3.70
1.40
0.55
0.51
4.70

-

4.70

2.64

14.50

1.270TYP

E

C

H

A

B

D

L

J

K

G

2.44

14.10

C945

4/4

08-Feb-06