ABSOLUTE MAXIMUM RATINGS (T
A
=25C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limits
Unit
Rating
Symbol
Parameter
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Collector-Emitter Breakdown Voltage
I
C
=-10mA, I
B
=0
Collector-Base Breakdown Voltage
I
C
=-1mA, I
E
=0
Emitter-Base Breakdown Voltage
I
E
=-1mA, I
C
=0
Collector Cutoff Current
V
CB
=-30V, I
E
=0
I
CBO
KTA1663
T
j
P
D
WEITRON
http://www.weitron.com.tw
PNP Epitaxial Planar Transistors
-35
-30
-5.0
-1.5
0.5
Collector Power Dissipation
I
C
C
C
W
Storage Temperature Range
T
stg
-55 to +150
-55 to +150
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
Collector Current
V
CBO
V
CEO
V
EBO
A
V
V
V
BV
EBO
BV
CEO
BV
CBO
-35
-30
-5
-
-
-
-
-
-0.1
-
-
-
V
V
V
A
Collector Cutoff Current
V
EB
=-5V, I
C
=0
I
EBO
-
-0.1
-
A
Junction Temperature
1/3
14-Jul-06
Lead(Pb)-Free
P b
WEITRON
http://www.weitron.com.tw
KTA1663
Transition Frequency
V
CE
=-5V, I
C
=-50mA
Output Capacitance
V
CB
=-10V, I
E
=0, f=1MHz
80
-
-
MHz
DYNAMIC CHARACTERISTICS
f
T
-
-
50
pF
C
ob
Marking
Range
Rank
O
Y
100-200
160-320
HO
HY
CLASSIFICATION OF h
FE
ELECTRICAL CHARACTERISTICS
(T
A
=25C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
=-1.5A, I
B
=-30mA
h
FE
100
-
320
-
V
CE(sat)
V
BE(sat)
-
-
-0.2
V
-
-
-1.0
V
2/3
14-Jul-06