Schottky Barrier Diodes
MINI-MELF Outline Dimensions
*Silicon Epitaxial Planner Diode
*Low Reverse Current and Low Forward Voltage
*Low Current Rectification and High Speed Switching
*Case : MINI-MELF Glass Case (SOD-80)
*Polarity: Color Band Denotescathode Band
*Weight : Approx 0.05 gram
*High Reliability
*Used in Recorder, Radio, TV, Telephone as Detectors
Mechanical Data:
Features:
LL60/LL60P
WEITRON
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Schottky Barrier Diode
30-50 mAMPERES
40-45 VOLTS
MINI-MELF
Unit:mm
A
B
C
Dim
A
B
C
Min
3.30
1.30
0.28
Max
3.70
1.60
0.50
MINI MELF
Maximum Ratings
( TA=25 C Unless otherwise noted)
Characteristic
Pepetitive Peak Reverse Voltage
Symbol
V
RRM
I
FSM
LL60
LL60P
Unit
V
mA
TJ TSTG
-65 to +125
Electrical Characteristics
( TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Tpy
Max
Unit
V
LL60/LL60P
Reverse Recovery Time
IR
IF=1 mA
Irr=1 mA,
IF=30 mA
IF=I =1mA ,
IF=200 mA
VF
I
F
A
m
C
Forward Voltage
Cj
PF
WEITRON
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Forward Continuous Current, T =25 C
Non-Repetitive Peak Forward Surge Current
Operating and Strorage Temperature Range
,
40
150
30
50
500
45
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
Junction Capacitance
Rverse Current
V
R
=15V
R
c
=100
V
R
=1V, f=1MHz
V
R
=10V, f=1MHz
Trr
0.32
0.24
0.65
0.65
0.1
0.5
2.0
R
6.0
1.0
0.5
1.0
0.5
0.5
1.0
1.0
uA
nS
-
-
-
-
-
-
-
-
-
-
-
-
@t=1S
A
LL60/LL60P
WEITRON
http//www.weitron.com.tw
FIG.1 Fowrad Current vs.
Forward Voltage
FIG.2 Reverse Current vs.
Continuous Reverse Votlage
FIG.3 Junction Capacitance vs.
Continuous Reverse Applied Voltage
VF(V)
IF(mA)
VR(V)
IR(UA)
VF(V)
C (pF)
50
0
100
150
200
250
0
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.2
0.4
0.6
0.8
1.0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
2
4
6
8
10
12
LL60P
LL60P
LL60
LL60P
LL60
LL60
J
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