Surface Mount Switching Diode
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr4ns
*Small Outline Surface Mount SOT-23 Package
Features:
Unit:mm
Dim
A
B
C
D
E
G
H
J
K
L
M
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
T OP V I E W
K
C
1
2
3
MMBD1009
MMBD1011
SWITCHING DIODE
200m AMPERES
75 VOLTS
SOT-23
SOT-23 Outline Dimensions
Min
Max
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22-Sep-05
Lead(Pb)-Free
P b
Unit
Characteristic
Symbol
Min
Max
Electrical Characteristics
(TA=25C Unless Otherwise Note) (Each Diode)
Off Characteristics
Adc
Reverse Breakdown Voltage
IBR=100Adc
Reverse Voltage Leakage Current
VR=50V
VBR
IR
75
Vdc
0.1
-
-
Maximum Ratings
Characteristic
Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Symbol
V
R
Unit
Volts
Value
75
200
500
mAdc
mAdc
I
O
I
FM
Thermal Characteristics
Characteristic
Symbol
Total Device Dissipation FR-5
Board *
1
, TA=25C
Derate Above 25C
Total Device Dissipation
Alumina Substrate*
2
TA=25C
Derate Above 25C
P
D
P
D
Max
Unit
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RJA
TJ, Tstg
225
1.8
556
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
RJA
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22-Sep-05
MMBD1009
MMBD1011
Off Characteristic
Unit
Characteristic
Symbol
Min
Max
Diode Capacition
Forward Voltage
IF=10 mAdc
IF=50 mAdc
IF=100 mAdc
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc
IR(REC)=1.0 mAdc, RL=100
C
D
VF
trr
4.0
-
-
-
4.0
PF
mVdc
nS
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
MMBD1009
MMBD1011
A2
A6
1000
1000
1200
+10V
820
2.0K
100 H
0.1F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1F
VR
INPUT SIGNAL
tr
tp
10%
90%
t
IF
IR
trr
t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
VR=0, f=1.0MHz
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22-Sep-05
MMBD1009
MMBD1011
1
2
3
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
100
10
1.0
0.1
I F
, FOR
W
ARD CURRENT
(mA)
FIGURE 2 .FORWARD VOLTAGE
TA=-40 C
TA=25 C
TA=85 C
0
10
20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)
I A
. REVERSE CURRENT
(A)
10
1.0
0.1
0.01
0.001
TA=150 C
TA=125 C
TA=25 C
TA=55 C
TA=85 C
FIGURE 3. LEAKAGE CURRENT
VR. REVERSE VOLTAGE (VOLTS)
C
D
. DIODE CAP
ACIT
ANCE (
PF)
FIGURE 4. CAPACITANCE(2836)
0
2.0
4.0
6.0
8.0
1.75
1.50
1.25
1.00
0.75
VR. REVERSW VOLTAGE (VOLTS)
C
D
. DIODE CAP
ACIT
ANCE (
PF)
FIGURE 6. CAPACITANCE(7000)
0
2.0
4.0
6.0
8.0
0.68
0.64
0.60
0.56
0.52
VR. REVERSW VOLTAGE (VOLTS)
C
D
. DIODE CAP
ACIT
ANCE (
PF)
FIGURE 5. CAPACITANCE(2838)
0
2
4
6
8
1.0
0.9
0.8
0.7
0.6
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MMBD1009
MMBD1011
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