SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance
(VCB=10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
Voltage Feeback Radio
S mall-S ignal C urrent G ain
Output Admittance
Collector Base Time Constant
(IE=20 mAdc, VCB=20 Vdc, f=31.8 MHz)
Noise Figure
(IC=100 Adc, VCE=10Vdc, RS=1.0k, f=1.0kHz)
Cobo
Cibo
hre
hfe
300
-
-
-
-
-
-
0.25
75
25
8.0
25
1.25
4.0
375
200
150
4.0
pF
pF
x 10-4
-
DC Current Gain
(IC=0.1 mAdc, VCE=10 Vdc)
(IC=1.0 mAdc, VCE=10 Vdc)
(IC=10 mAdc, VCE=10 Vdc)
(IC=150mAdc, VCE=10 Vdc)
(IC=500 mAdc, VCE=10 Vdc)
Collector-Emitter Saturation Voltage
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150 mAdc, IB=15mAdc)
(IC=500 mAdc, IB=50mAdc)
hFE
VCE(sat)
VBE(sat)
-
-
-
-
-
-
300
-
-
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT2222AW
35
50
75
100
40
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz)
(IC =10 mAdc, VC E =10Vdc, f=1.0 kHz)
(IC=10 mAdc, VCE=10Vdc, f=-1.0kHz)
fT
MHz
hie
k
hoe
mhos
rb, Cc
ps
NF
dB
WEITRON
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0.3
1.0
1.2
2.0
0.6
(1)
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT2222AW
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=30 Vdc, VBE=(off)=-0.5Vdc,
IC=150 mAdc, IB1=15 mAdc)
(VCC=30 Vdc, IC=150 mAdc,
IB1=IB2=15 mAdc)
td
tr
ts
tf
-
-
-
-
10
25
225
60
ns
ns
3.Pulse Test:Pulse Width 300 s, Duty Cycle 2.0%.
4.fT is defined as the frequency at which Ihfe extrapolates to unity.
125 C
25 C
-40 C
VCE=5V
0.1
0.3
1
3
10
30
100
300
500
400
300
200
100
0
Typical Pulsed Current Gain
vs Collector Current
Ic-COLLECTOR CURRENT (mA)
h F
E
-
T
Y
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
b=10
-40 C
25 C
125 C
1
10
100
500
0.4
0.3
0.2
0.1
Collector- Emitter Saturation
Voltage vs Collector Current
Ic-COLLECTOR CURRENT (mA)
V
C
E
S
A
T
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
b=10
-40 C
25 C
125 C
1
10
100
500
1
0.8
0.6
0.4
Base-Emitter Saturation
Voltage vs Collector Current
Ic-COLLECTOR CURRENT (mA)
V
B
E
S
A
T
B
A
S
E
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
VCE=5V
-40 C
25 C
125 C
0.1
1
10
25
1
0.8
0.6
0.4
0.2
Base-Emitter ON Voltage vs
Collector Current
Ic-COLLECTOR CURRENT (mA)
V
B
E
(
O
N
)
B
A
S
E
-
E
M
I
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
Typical Characteristics
<
=
<
=
WEITRON
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WEITRON
MMBT2222AW
VCB=40V
C0llector-Cutoff Current vs
Ambient Temperature
TA-AMBIENT TEMPERATURE ( C)
I
C
B
O
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
25
50
100
125
150
75
500
100
1
0.1
10
f=1MHz
Cte
Cob
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
REVERSE BIAS VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0.1
1
10
100
20
16
12
8
4
IB1=IB2=
1c
10
Vcc=25V
tON
tOFF
10
100
1000
400
320
240
160
80
0
Turn On and Turn Off Times
vs Collector Current
Ic-COLLECTOR CURRENT(mA)
T
I
M
E
(
n
S
)
IB1=IB2=
1c
10
ts
tr
tf
td
Vcc=25V
10
100
1000
400
320
240
160
80
0
Switching Times
vs Collector Current
Ic-COLLECTOR CURRENT(mA)
T
I
M
E
(
n
S
)
SOT-23
0
25
50
75
100
125
150
1
0.75
0.5
0.25
0
Power Dissipation vs
Ambient Temperature
TEMPERATURE( C)
P D
-
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
W
)
http://www.weitron.com.tw
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