General Purpose Transistor
NPN Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
Unit
Vdc
Vdc
Vdc
mAdc
200
Rating
MMBT3904=1AM
Device Marking
WEITRON
MMBT3904
1
2
3
BASE
COLLECTOR
EMITTER
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pukse Width 300 uS, Duty Cycle 2.0%.
Collector-Emitter Breakdown Voltage
(3)
(I
C
=1.0mAdc.I
B
=0)
Collector-Base Breakdown Voltage (I
C
=10 Adc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=10 Adc, I
C
=0)
Base Cutoff Current (V
CE
=30 Vdc, V
EB
=3.0 Vdc)
Collector Cutoff Current (V
CE
=30Vdc, V
EB
=3.0Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Off C har acter istics
40
60
6.0
-
-
-
-
-
<
=
<
=
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
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Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
q
R JA
q
SOT-23
1
2
3
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MMBT3904
Small-signal Characteristics
Current-Gain-Bandwidth Product (4)
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)
Output Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz)
Noise Figure
(VCE= 5.0Vdc, IC= 100 Adc, , RS=1.0k ohms, f=1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
-
-
-
-
0.5
1.0
100
1.0
4.0
5.0
MHz
pF
pF
kohms
x 10-4
-
umhos
dB
40
400
8.0
10
8.0
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= 3.0 Vdc, V
BE
= -0.5 Vdc
Ic= 10 mAdc, I
B1
= 1.0 mAdc)
(Vcc= 3.0 Vdc,
Ic= 10 mAdc, I
B1
=I
B2=
1.0 mAdc)
3.Pulse Test:Pluse Width 300 uS, Duty Cycle 2.0%.
<
=
<
=
td
tr
ts
tf
-
-
-
-
35
35
200
50
ns
ns
WEITRON
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 50 mAdc, VCE= 1.0Vdc)
(IC= 100 mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage
(3)
(IC= 10 mAdc, IB= 1.0mAdc)
(IC= 50 mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage
(3)
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
40
70
100
60
30
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
On Characteristics
0.65
-
(3)
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MMBT3904
FIG.3 Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
10
7.0
5.0
3.0
2.0
1.0
Cibo
Cobo
FIG.4 Charge Data
IC COLLECTOR CURRENT (mA)
Q
C
H
A
R
G
E
(
p
C
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
5000
3000
2000
1000
700
500
300
200
100
70
50
VCC=40V
IC / IB=10
QT
QA
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C
TJ=125 C
<1ns
-0.5V
+10.9V
300 ns
DUTY CYCLE=2%
10k
CS<4 pF
+3V
275
-9.1V
<1ns
0
10<t1<500s
t1
+10.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
+3V
*Total shunt capacitance of test jig and connectors
FIG.1 Delay and Rise Time
Equivalent Test Circuit
FIG.2 Storage and Fall Time
Equivalent Test Circuit
WEITRON
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MMBT3904
tr@VCC=3.0V
td@VOB=0V
FIG.5 Turn-On Time
IC COLLECTOR CURRENT
T
I
M
E
(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=10
40V
15V
2.0V
IC COLLECTOR CURRENT (mA)
t f
R
I
S
E
T
I
M
E
(
n
s
)
FIG.6 Rise Time
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
30
20
10
7
5
50
VCC =40V
IC / IB=10
FIG.8 Fall Time
IC COLLECTOR CURRENT (mA)
t f
F
A
L
L
T
I
M
E
(
n
s
)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC / IB=20
IC / IB=10
FIG.7 Storage Time
IC COLLECTOR CURRENT (mA)
I,
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
s
1.0
2.0
3.0
5.0 7.0 10
20 30
50 70 100
200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=20
IC / IB=20
IC / IB=10
IC / IB=10
t
,
=ts-1/8tf
IB1=IB2
s
WEITRON
FIG.10
RS SOURSE RESISTANCE (kOHMS)
N
F
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
14
12
10
8
6
4
2
0
f =1.0kHz
IC=1.0mA
IC=0.5mA
IC=50 A
IC=100 uA
FIG.9
f FREQUENCY (kHz)
N
F
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
100
12
10
8
6
4
2
0
SOURCE RESISTANCE=200 W
IC=1.0 mA
SOURCE RESISTANCE=200 W
IC=0.5 mA
SOURCE RESISTANCE=500
IC=100A
SOURCE RESISTANCE=1.0k
IC=50uA
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE=5.0 Vdc. TA=25 C, Bandwidth=1.0Hz)
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MMBT3904
WEITRON
FIG.11 Current Gain
IC COLLECTOR CURRENT (mA)
h
f
e
C
U
R
R
E
N
T
G
A
I
N
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
300
200
100
70
50
30
FIG.13 Input Impedance
IC COLLECTOR CURRENT (mA)
h f
e
IN
P
U
T
I
M
P
E
D
A
N
C
E
(
k
O
H
M
S
)
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
10
5.0
2.0
1.0
0.5
0.2
FIG.14 Voltage Feedback Radio
IC COLLECTOR CURRENT (mA)
h f
e
V
O
L
T
A
G
E
F
E
E
D
B
A
C
K
R
A
D
I
O
(
X
1
0
-
4
)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
FIG.12 Output Admittance
IC COLLECTOR CURRENT (mA)
h o
e
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
100
50
20
10
5
2
1
FIG.15 DC Current Gain
IC COLLECTOR CURRENT (mA)
h f
e
D
C
C
U
R
R
E
N
T
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
TJ=+125 C
VCE=1.0V
+25 C
-55 C
TYPICAL STATIC CHARACTERISTICS
h PARAMETERS
(VCE=10 Vdc,m f=1.0 kHz, TA=25 C)
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(NPN)
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