Dual Bias Resistor Transistor
Collector-Emitter Voltage
Symbol
VCEO
Value
-50
Unit
Rating
IC
VCBO
-50
mAdc
Vdc
Vdc
Collector Current-Continuous
-100
MUN5111DW Series
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
Device Marking and Resistor Values
(1)
187
1.5
670
-55 to +150
Collector-Base Voltage
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 1.0 inch Pad
Device
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
Marking
R1(K)
R2(K)
0A
0B
0C
0D
0E
0F
0G
10
22
47
10
10
4.7
1.0
10
22
47
47
8
8
1.0
Device
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Marking
R1(K)
R2(K)
0H
0J
0K
0L
0M
0N
0P
2.2
4.7
4.7
22
2.2
100
47
2.2
4.7
47
47
47
100
22
l
l
PNP Silicon
SOT-363(SC-88)
3
4
5
1
2
6
PNP+PNP
1
2
3
6 5
4
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WE IT R ON
MUN5111DW Series
Collector-Emitter Breakdown Voltage
(IC=-2.0mA, I =0)
Collector-Base Breakdown Voltage
(IC=-10 uA ,IE=0)
Collector-Base Cutoff Voltage
(V
CB
=-50 V, I =0)
Collector-Emitter Cutoff Current
(ICE=-50V, I =0)
Emitter-Base Cutoff Current
V(BR)CEO
ICBO
V(BR)CBO
VCE(sat)
ICEO
IEBO
mA
V
nA
V
nA
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
On Characteristics
Typ
-50
-
-50
-
-
-
-
-100
-500
-
-
-
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
B
E
B
(V =-6.0V, I =0)
EB
C
-0.5
-0.2
-0.1
-0.2
-0.9
-1.9
-2.3
-4.3
-0.18
-1.5
-0.13
-0.2
-0.05
-0.13
Vdc
-0.25
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
MUN5137DW/MUN5131DW
MUN5115DW/MUN5116DW
MUN5132DW/MUN5133DW/MUN5134DW
Collector-Emitter Saturation Voltage (I =-10mA, I =-0.3mA)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
C
E
B
(I =-10mA, I =--5mA)
C
B
(I =-10mA, I =--1mA)
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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MUN5111DW Series
Characteristics
Symbol
Min
Max
Unit
Typ
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
DC Current Gain
(VCE=-10V, I =-5.0mA)
Output Voltage(on)
(VCC=-5.0V, V =-2.5V, R =1.0k )
h
On Characteristics
35
60
80
80
160
160
8.0
3.0
15
80
80
80
80
80
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
60
100
140
140
250
250
15
5.0
27
140
130
140
150
140
C
B
L
B
L
(3)
FE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Vdc
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
(V =-5.0V, V =-3.5V, R =1.0k )
CC
L
B
(V =-5.0V, V =-5.5V, R =1.0k )
CC
L
B
(V =-5.0V, V =-4.0V, R =1.0k )
CC
VOL
VOH
Output Voltage(off)
V
V
WE IT R ON
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5115DW
MUN5116DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
MUN5130DW
L
B
(V =-5.0V, V =-0.05V, R =1.0k )
CC
L
B
(V =-5.0V, V =-0.25V, R =1.0k )
CC
L
B
(V =-5.0V, V =-0.5V, R =1.0k )
CC
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MUN5111DW Series
Characteristics
Symbol
Min
Max
Unit
Typ
Electrical Characteristics
On Characteristics
(T
A
=25 C Unless Otherwise noted)
Input Resistor
R1/R2
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
0.7
3.3
3.3
15.4
1.54
70
32.9
0.17
0.8
-
0.8
0.055
0.38
0.038
1.7
0.21
1.0
-
1.0
0.1
0.47
0.047
2.1
0.25
1.2
-
1.2
0.185
0.56
0.056
2.6
10
22
47
10
10
4.7
2.2
1.0
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
1.3
6.1
6.1
28.6
2.86
130
61.1
MUN5114DW
MUN5115DW/MUN5116DW
MUN5130DW/MUN5131DW/MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5137DW
Resistor Ratio MUN5111DW/MUN5112DW
k
MUN5113DW/MUN5136DW
WE IT R ON
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
MUN5111DW1T1 Series
FIG.1 Derating Curve - ALL DEVICES
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMB IE NT T E MP E R AT UR E (
5C )
R
J A
= 490 C /W
250
P
D
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
ALL MUN5111DW1T1 SERIES DEVICES
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
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MUN5111DW Series
WE IT R ON
FIG.4 Output Capacitance
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
o
b
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0
f = 1 MHz
l
E
= 0 V
T
A
= 25 C
h F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
FIG.3 DC Current Gain
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75 C
-25 C
100
10
25 C
V
CE
= 10 V
I C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
m
A
)
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25 C
25 C
1
2
3
4
5
6
7
8
9
10
FIG.5 Output Current versus Input Voltage
75 C
V
O
= 5 V
V
i
n
,
I
N
P
U
T
V
O
L
T
A
G
E
(
V
O
L
T
S
)
FIG.6 Input Voltage versus Output Current
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= -25 C
25 C
75 C
V
O
= 0.2 V
FIG.2 V
CE(sat)
versus I
C
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V C
E
(
s
a
t
),
C
O
L
L
E
C
T
O
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.1
1
0
40
50
I
C
/I
B
= 10
T
A
= -25 C
25 C
75 C
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS- MUN5111DW
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