Surface Mount Dual Bias Resistor Transistor
NPN Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Rating
WEITRON
MUN5211DW Series
http://www.weitron.com.tw
Total Device Dissipation T
A
=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol
Max
187
256
1.5
2.0
670
(2)
490
(3)
-55 to +150
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
Device Marking and Resistor Values
R JA
3
4
5
1
2
6
NPN+NPN
Collector Current
(1)
(2)
(3)
(2)
(3)
Device
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
Marking
R1(K)
R2(K)
7A
7B
7C
7D
7E
7F
7G
10
22
47
10
10
4.7
1.0
10
22
47
47
8
8
1.0
Device
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
Marking
R1(K)
R2(K)
7H
7J
7K
7L
7M
7N
7P
2.2
4.7
4.7
22
2.2
100
47
2.2
4.7
47
47
47
100
22
1.One Junction Heated
2.FR-4 @ Minimum Pad
3.FR-4 @ 1.0 1.0 Inch Pad
I
I
I
I
SOT-363(SC-88)
1
2
3
6 5
4
Lead(Pb)-Free
P b
1/6
Rev.A 29-Dec-05
MUN5211DW Series
WEITRON
http://www.weitron.com.tw
Collector-Base Cutoff Current (V
CB
=50Vdc, I =0)
Collector-Emitter Cutoff Current(V =50Vdc, I =0)
Emitter-Base Cutoff Current (V =6.0Vdc, I
C
=0)
Collector-Base Breakdown Voltage (I =10uAdc, I =0)
Collector-Emitter Breakdown Voltage(4) (I =2.0mA, I =0)
I
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
V
-
-
nAdc
nAdc
mAdc
Vdc
Vdc
Off C har acter istics
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
E
B
CE
C
C
B
EB
E
CBO
I CEO
I EBO
(BR)CBO
V(BR)CEO
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
2/6
Rev.A 29-Dec-05
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Typ
Min
Max
MUN5211DW Series
WEITRON
DC Current Gain
(IC= 5.0 mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 0.3mAdc)
Output Voltage (on)
(VCC = 5.0 V, VB= 2.5V, R =1.0 k )
(IC= 10 mAdc, IB= 5.0mAdc)
(IC= 10 mAdc, IB= 1.0mAdc)
HFE
VCE(sat)
VOL
VOL
Vdc
Vdc
On Characteristics
(4)
http://www.weitron.com.tw
MUN5211DW
MUN5230DW/MUN5231DW
MUN5215DW/MUN5216DW
MUN5232DW/MUN5233DW/MUN5234DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
MUN5211DW
MUN5212DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5213DW
MUN5236DW
MUN5237DW
MUN5230DW
MUN5215DW
MUN5216DW
MUN5233DW
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4.9
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
L
Output Voltage (off)
(VCC = 5.0 V, VB= 0.5V, R =1.0 k )
L
(VCC = 5.0 V, VB= 3.5V, R =1.0 k )
L
(VCC = 5.0 V, VB= 0.05V, R =1.0 k )
L
(VCC = 5.0 V, VB= 0.25V, R =1.0 k )
L
(VCC = 5.0 V, VB= 5.5V, R =1.0 k )
L
(VCC = 5.0 V, VB= 4.0V, R =1.0 k )
L
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
3/6
Rev.A 29-Dec-05
Electrical Characteristics
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Typ
Min
Max
MUN5211DW Series
WEITRON
Input Resistor
Resistor Ratio
R1
R1/R2
On Characteristics
(5)
http://www.weitron.com.tw
MUN5211DW
MUN5214DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5237DW
MUN5213DW/MUN5236DW
MUN5215DW/MUN5216DW
MUN5230DW/MUN5231DW/MUN5232DW
MUN5211DW/MUN5212DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
k
4
/6
Rev.A 29-Dec-05
MUN5211DW Series
WEITRON
http://www.weitron.com.tw
FIG 1. Derating Curve
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMB IE NT T E MP E R AT UR E ( C )
R
J A
= 833 C /W
250
P
D
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
FIG 2. V
CE(sat)
versus I
C
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (m A)
T
A
= -25 C
25 C
75 C
I
C
/I
B
= 10
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h FE
, DC CURRENT
GAIN (NORMALIZED)
FIG 3. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (m A)
T
A
= 75 C
25 C
-25 C
V
CE
= 10 V
I C
, COLLECT
OR CURRENT
(mA)
FIG 4. Output Capacitance
FIG 5. Output Current versus Input Voltage
75 C
25 C
T
A
= -25 C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOL TAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
f = 1 MHz
I
E
= 0 V
T
A
= 25 C
V
O
= 5 V
V
in
, INPUT
VOL
T
AGE (VOL
TS)
10
0
20
30
I
C
, COLLECTOR CURRENT (m A)
10
1
0.1
T
A
= -25 C
75 C
25 C
40
50
FIG 6. Input Voltage versus Output Current
V
O
= 0.2 V
5
/6
Rev.A 29-Dec-05
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