ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
VCEO
VCBO
VEBO
IC(DC)
Value
Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=10 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 Adc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, V =-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
6.0
-
-
-
-
-
-
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
PZT2222A
SOT-223
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
NPN Silicon Planar Epitaxial Transistor
(Ta=25 C)
W
Junction Temperature
T j
150
Storage, Temperature
-65 to +150
Device Marking
PZT2222A=GT2222A
40
75
20
10
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
3.EMITTER
2.COLLECTOR
1.BASE
BE
C
Total Device Disspation T =25 C
A
1.5
4.COLLECTOR
1
2
3
4
BASE
1
COLLECTOR
2, 4
3
EM ITTER
40
75
6.0
600
collector lead min. 0.93 inches.
2
PZT2222A
WEITRON
http://www.weitron.com.tw
ELECTRICAL CHARACTERISTICS Continued
(T
A
= 25 C unless otherwise noted)
C harac teris tic
S ymbol
Min
Max
Unit
OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
C B
= 60 Vdc, I
E
= 0, T
A
= 125 C)
I
CBO
-
-
10
10
nAdc
uAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= - 55 C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
h
FE
35
50
70
35
100
50
40
-
-
-
-
300
-
-
-
Collector-Emitter Saturation Voltages
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
-
-
0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE( sat)
0.6
-
1.2
2.0
Vdc
Input Impedance
5
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
5
h
ie
5
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
re
-
-
8.0x10
-4
4.0x10
-4
-
Small-Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
fe
50
75
300
375
-
Output Admittance
5
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
5
h
oe
5
5.0
25
35
200
umhos
Noise Figure (V
CE
= 10 Vdc, I
C
= 100 uAdc, f = 1.0 kHz)
F
-
4.0
dB
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
-
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
c
-
-
-
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
e
-
25
pF
SWITCHING TIMES
(T
A
= 25 C)
Delay Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
= 15 mAdc, V
EB(of f)
= 0 .5Vdc)
t
d
-
10
ns
Rise Time
I
B(on)
f)
Figure 1
t
r
-
25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B(on )
= I
B( ff)
= 15 mAdc)
t
s
-
225
ns
Fall Time
I
= I
B( off)
Figure 2
t
f
-
60
WEITRON
http://www.weitron.com.tw
PZT2222A
V
i
90%
10%
t
p
t
r
0
V
CC
R2
R1
V
i
D.U.T.
V
o
FIG.1 Input Waveform and Test Circuit for Determining Delay Time and Rise Time
FIG.2 Input Waveform and Test Circuit for Determining Storage Time and Fall Time
V
i
= - 0.5 V to +9.9 V , V
CC
= +30 V, R1 = 619 , R2 = 200 .
PULSE GENERATOR:
OSCILLOSCOPE:
PULSE DURATION
t
p
200 ns
INPUT IMPEDANCE
Z
i
> 100 k
RISE TIME
t
r
2 ns
INPUT CAPACITANCE
C
i
<
<
12 pF
DUTY FACTOR
=
0.02
RISE TIME
t
r
<
5 ns
t
f
100 ms
- 13.8 V
0
+16.2 V
V
i
TIME
V
CC
Vo
OSCILLOSCOPE
D.U.T.
V
i
R2
R3
R4
D1
R1
V
BB
-
<-
d
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