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Электронный компонент: STM7822A

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WEITRON
http://www.weitron.com.tw
WT7822AM
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
,Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT7822AM=STM7822A
Surface Mount N-Channel
D
8
7
6
5
1
2
3
4
D
D
D
S
S
S
G
SO-8
DRAIN CURRENT
14 AMPERES
DRAIN SOURCE VOLTAGE
25 VOLTAGE
1
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SO-8 Package
R <7 m
@V
GS
=10V
25
V
Spike
4
V
Drain-Source Voltage Rating
30
16
14
56
2.5
14
50
-
+
Enhancement Mode MOSFET
DS(ON)
R <9 m
@V
GS
=4.5V
DS(ON)
J
(2)
(1)
(1)
(1)
(1)
1/6
02-Aug-05
Lead(Pb)-Free
P b
WEITRON
http://www.weitron.com.tw
WT7822AM
Input Capacitance
V
DS
=16V,V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=16V,V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=16V,V
GS
=0V, f=1MHZ
Total Gate Charge
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250A
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=250A
Gate-Source Leakage Current
V
DS
=0V,V
GS
= 16V
Drain-Source On-Resistance
V
GS
=10V, I
D
=14A
On-State Drain Current
V
DS
=10V,V
GS
=10V
Forward Transconductance
V
DS
=10V, I
D
=14A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
25
-
V
0.7
1.2
2.0
V
-
-
-
-
-
1
100
nA
m
uA
A
S
6
7
8
9
3640
550
420
F
P
12.3
23.8
12.1
73.9
36.2
-
-
11.2
9.9
0.84
1.2
nS
nS
nS
nS
nc
nc
nc
V
-
10.2
-
Electrical Characteristics
(T
A
=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=20V,V
GS
=0V
-
-
-
28
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
4. Guaranteed when external Rg=6 and tf < tf max.
V
GS
=4.5V, I
D
=10A
=5V,V =16V, I
D
=14A, R
GEN
=6
DD
V
GS
=5V,V =16V, I
D
=14A, R
GEN
=6
DD
V
GS
=5V,V =16V, I
D
=14A, R
GEN
=6
DD
V
GS
=5V,V =16V, I
D
=14A, R
GEN
=6
DD
V
GS
Gate-Source Charge
Gate-Drain Charge
V
GS
=5V, V
DS
=16V, I
D
=14A
V
GS
=5V, V
DS
=16V, I
D
=14A
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=14A
<_
<_
<_
V
GS
=5V,V
DS
=16V,I
D
=14A
V
GS
=10V,V
DS
=16V,I
D
=14A
2/6
02-Aug-05
WEITRON
http://www.weitron.com.tw
WT7822AM
W
WEE IITT RR O
ON
N
3/6
02-Aug-05
Fig.5 Gate Threshold Variation
Fig.6 Breakdown Voltage Variation
with Temperature
V
t
h
,

N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e

T
h
r
e
s
h
o
l
d

V
o
l
t
a
g
e
B
V
D
S
S
,

N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
Tj, Junction Temperature (C)
Tj, Junction Temperature (C)
with Temperature
C, Capacitance (pF)
I
D
, Drain Curr
ent (A)
I
D
, Drain Curr
ent (A)
On-Resistance
R
DS(ON)
,
Tj, Junction Temperature ( C)
(Normalized)
Fig.1 Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
Fig.2 Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig.4 On-Resistance Variation with Temperature
Fig.3 Capacitance
V
DS
, Drain-to Source Voltage (V)
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
V
GS
=2V
V
GS
=2V
V
GS
=2.5V
V
GS
=3V
V
GS
=4.5V
V
GS
=10V
25 C
25
20
15
10
5
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
Tj=125 C
-55 C
Ciss
Coss
6000
4800
3600
2400
1200
0
Crss
0 4 8 12 16 20 24
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
-25
25
75
V
GS
=10V
I
D
=14A
-50 -25
0
25 50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25 50
75 100 125
V
DS
=V
GS
I
D
=250uA
WEITRON
http://www.weitron.com.tw
WT7822AM
W
WEE IITT RR O
ON
N
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
4/6
02-Aug-05
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
5
INVERTED
g
F
S
,

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
S
)

V
G
S
,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)

I
s
,

S
o
u
r
c
e
-
d
r
a
i
n

c
u
r
r
e
n
t

(
A
)
Fig.7 Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Fig.9 Gate Charge
Qg, Total Gate Charge (nC)
Fig.10 Maximum Safe Operating Area
V
DS
, Drain-Source Voltage (V)
Fig.8 Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)

I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
20
10
0
1
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=25 C
35
28
21
14
42
0
0
5
10
15
20
25
7
V
DS
=10V
4
5
3
2
1
0
0
6 12 18
24
30
36 42 48
V
DS
=16V
I
D
=14A
60
10
1
0.1
0.03
0.1
1
10 20
50
R
DS
(ON) Limit
10ms
100ms
1s
DC
V
GS
=10V
Single Pulse
Tc=25 C
WEITRON
http://www.weitron.com.tw
WT7822AM
W
WEE IITT RR O
ON
N
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
T
N
E
I
S
N
A
R
T
D
E
Z
I
L
A
M
R
O
N
,)
t
(
r
E
C
N
A
T
S
I
S
E
R
L
A
M
R
E
H
T
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
Duty Cycle=0.5
0.2
0.1
0.05
0.02
P
DM
t
1
t
2
1. R j
A
(t)=r (t) * R j
2. R j =See Datasheet
3. Tj
M
-TA = P
DM
* R j (t)
4. Duty Cycle, D=t /t
1
2
A
A
A
Single Pulse
5/6
02-Aug-05
WT7822AM
SO-8 Package Outline Dimensions
Unit:mm
WEITRON
http://www.weitron.com.tw
1
(4X)
B
eB
E1
L
7(4X)
A
2
1
A
A
C
SYMBOLS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
1.27 BSC
0.60
0
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
0.80
8
MILLIMETERS
A
A1
B
C
D
E1
eB
e
L
7
D
e
6/6
02-Aug-05