APPLICATIONS
* Microprocessor based equipment
* Notebooks, Desktops, and Servers
* Cell Phone Handsets and Accessories
* Personal Digital Assistants(PDA's)
* Portable Instrumentation
* Pagers Peripherals
http://www.weitron.com.tw
WEITRON
WOSD03/WOSD05
WOSD12
TRANSIENT
VOLTAGE
SUPPRESSORS
300 WATTS
3-12 VOLTS
Surface Mount TVS Diodes Array
for ESD Protection
* CASE: Molded Epoxy
* TERMINAS: UL 94V-0
* WEIGHT: 0.0045 gram
* MOUNTING POSITION: Any
MECHANICAL DATA
* ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact)
* 300 Watts Peak Power Protection(tp=8/20 uS)
* Excellent Clamping Capability
* Low Leakage Current
* Protects one I/O or Power line
* Solid-state Silicon-avalanche Technology
* Small Package for use in Portable Electronics
* Transient Voltage Suppressors Encapsulated in a SOD-323 Package
FEATURES
SOD-323 Outline Dimensions
Unit:mm
SOD-323
1
2
1/4
Rev.A 19-Dec-05
Lead(Pb)-Free
P b
WEITRON
http://www.weitron.com.tw
Maximum Ratings(T
A
=25C Unless Otherwise Noted)
Characteristic
Symbol
Votle
Unit
P
PK
V
ESD
300
30
260(10s)
W
kV
Operating Temperature Range
Lead Soldering Temperature
ESD Voltage(HBM Waveform per IEC 61000-4-2)
Peak Pulse Power(t
P
= 8/20s)
T
J
T
L
-55 to +125
C
T
stg
-55 to +150
C
C
WOSD03/WOSD05
WOSD12
ELECTRICAL CHARACTERISTICS ( T = 25C)
WOSD03
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
I
t
= 1mA
V
RWM
= 3.3V
t
P
= 8/20s
V
R
= 0V,f = 1MHz
I
PP
= 1A,t
P
= 8/20s
I
PP
= 5A,t
P
= 8/20s
V
BR
V
RWM
-
5
-
-
-
-
3D
-
-
-
-
-
-
4
-
20
7
-
-
8.5
12
350
V
V
A
V
A
pF
I
R
V
C
I
PP
C
j
Reverse Leakage Current
Clamping Voltage
Peak Pulse Current
Junction Capacitance
Device Marking
Symbol
TYPE NUMBER
Min
Typ
Max
Unit
WOSD05
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
I
t
= 1mA
V
RWM
= 5V
t
P
= 8/20s
V
R
= 0V,f = 1MHz
I
PP
= 5A,t
P
= 8/20s
I
PP
= 24A,t
P
= 8/20s
V
BR
V
RWM
-
6
-
-
-
-
5D
-
-
-
-
-
-
5
-
10
9.8
-
-
14.5
24
350
V
V
A
V
A
pF
I
R
V
C
I
PP
C
j
Reverse Leakage Current
Clamping Voltage
Peak Pulse Current
Junction Capacitance
Device Marking
Symbol
TYPE NUMBER
Min
Typ
Max
Unit
2/4
Storage Temperature Range
Rev.A 19-Dec-05
WEITRON
http://www.weitron.com.tw
WOSD03/WOSD05
WOSD12
ELECTRICAL CHARACTERISTICS ( T
A
=25C Unless Otherwise Noted)
ELECTRICAL CHARACTERISTICS CURVES
WOSD12
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
I
t
= 1mA
V
RWM
= 12V
t
P
= 8/20s
V
R
= 1V,f = 1MHz
I
PP
= 5A,t
P
= 8/20s
I
PP
= 15A,t
P
= 8/20s
V
BR
V
RWM
-
13.3
-
-
-
-
6u
-
-
-
-
-
-
12
-
1
19
-
-
25
15
90
V
V
A
V
A
pF
I
R
V
C
I
PP
C
j
Reverse Leakage Current
Clamping Voltage
Peak Pulse Current
Junction Capacitance
Device Marking
Symbol
TYPE NUMBER
Min
Typ
Max
Unit
Fig.1 Non-Repetitive Peak Pulse Power
vs. Pulse Time
Pulse Duration - t
p
(s)
Ambient Temperature - T
A
(C)
I
f
o
r
e
w
o
P
d
e
t
a
R
f
o
%
P
P
P
-
r
e
w
o
P
e
s
l
u
P
k
a
e
P
k
p
)
W
k
(
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
0.01
0.1
1
10
0.1 1 10 100 1000
Fig.2 Power Derating Curve
3/4
Rev.A 19-Dec-05
WEITRON
http://www.weitron.com.tw
WOSD03/WOSD05
WOSD12
Fig.4 Clamping Voltage vs.
Peak Pulse Current
Fig.3 Pulse Waveform
0
5
10
15
20
25
30
0 5 10 15 20 25 30
Waveform
Parameters
tr = 8s
td = 20s
Fig.6 Forward Voltage vs. Forward Current
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
Time (s)
e
-t
td = I
PP
/2
Waveform
Parameters
tr = 8s
td = 20s
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14
Reverse Voltage - V
R
(V)
Forward Current - I
F
(A)
Peak Pulse Current - I
PP
(A)
C
-
e
c
n
a
t
i
c
a
p
a
C
j
)
F
p
(
V
-
e
g
a
t
l
o
V
d
r
a
w
r
o
F
F
)
V
(
V
-
e
g
a
t
l
o
V
g
n
i
p
m
a
l
C
C
)
V
(
I
f
o
t
n
e
c
r
e
P
P
P
f =1MHz
WOSD03/WOSD05
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
0 5 10 15 20 25 30 35 40 45
Waveform
Parameters:
tr = 8s
td = 10s
Fig.5 Capacitance vs. Reverse Voltage
WOSD12
WOSD03/WOSD05
WOSD12
WOSD03/WOSD05
WOSD12
4/4
Rev.A 19-Dec-05
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