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WSD500H
SCHOTTKY BARRIER
RECTIFIERS
100m AMPERES
40 VOLTS
*Extremely Low V
*Very Small Conduction Losses.
*Schottky Barrier Diodes Encapsulated in SOD-323 Package.
Unit:mm
F
Dim Min Max
A
B
C
D
E
H
J
K
1.60 1.80
1.15 1.35
0.80 1.00
0.25 0.40
0.15 REF
0.00 0.10
0.089 0.377
2.30 2.70
PIN 1.CATHODE
2.ANODE
MILLMETERS
WEITRON
Surface Monut Schottky Barrier Diode
Features:
SOD-323 Outline Demensions
SOD-323
1
2
1/3
05-Oct-05
Lead(Pb)-Free
P b
MAXIMUM RATING
Characteristics
Symbol
WSD 500H
Unit
Reverse Breakdown Voltage
Average Rectified Forward Current
Peak Forward Surge Current
(8.3ms 1/2 Sine Wave)
Storage Temperature
VR
IO
IFSM
Tstg
40
100
1.0
-40 to+125
Volts
mAmps
Amps
C
ELECTRICAL
Device Marking
Item
Marking
CHARACTERISTICS (Ta=25 C)
Characteristics
Symbol
Unit
Maximum Instantneous Forward Voltage
IF=10mA
Maximum Instantneous Reverse Current
(VR=10V)
WSD500H
Typical Junction Capacitance
(VR=10V, f=1MHz)
VF
IR
CJ
20
JV
0.45
1.0
Volts
Volts
uAmps
P
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WSD500H
W
WE
EIIT
TR
RO
ON
N
MIN
MAX
Reverse Breakdown Voltage
V
(BR)R
I
R =100uA
40
F
2/3
05-Oct-05
0
0.1
0.2
0.3
0.4
0.5
0.6
1000
100
10
1
C
52
FORWARD VOLTAGE:
VF (V)
FIG: 1 Forward Characteristics
R
O
F
W
T
N
E
R
R
U
C
D
R
A
:
I F
)
A
m
(
C
5
2
1
C
5
7
C
5
2
0
10
20
30
40
1m
10m
1
0.1
100
10
REVERSE VOLTAGE:
VR (V)
T
N
E
R
R
U
C
E
S
R
E
V
E
R
:
I
)
A
(
R
FIG.2 Reverse Characteristics
Electrical Characteristics Curves
(Ta=25 C unless specified otherwise)
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WSD500H
WEITRON
0
25
50
75
100
125
100
80
60
40
20
0
AMBIENT TEMPERATURE :
Ta ( C)
I o
T
N
E
R
R
U
C
)
%
(
FIG.4 Derating Curve
(mounting on glass epoxy PCBs)
0
5
10
15
20
25
30
35
100
10
1
P
A
C
T
I
C
A
N
E
E
W
T
E
B
E
C
N
A
:
S
L
A
N
I
M
R
E
T
T
C
)
F
p
(
REVERSE VOLTASGE :
V (V)
FIG.3 Capacitance Between
Terminals Characteristics
R
3/3
05-Oct-05
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