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WT-2300
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
, Tstg
I
S
-55 to 150
C
A
V
V
A
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T =125 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT2300=S00
Surface Mount N-Channel
1
2
3
GATE
SOURCE
DRAIN
SOT-23
DRAIN CURRENT
3.8 AMPERES
DRAIN SOURCE VOLTAGE
20 VOLTAGE
1
2
3
Features:
*Super high dense cell design for low R
DS(ON)
*Rugged and Reliable
*SOT-23 Package
R <40 m @V =4.5V
20
10
3.8
15
1.25
1.25
100
-
+
Enhancement Mode MOSFET
DS(ON)
GS
R <60 m @V =2.5V
DS(ON)
GS
R <75 m @V =1.8V
DS(ON)
GS
J
(2)
(1)
(1)
(1)
WEITRON
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WT-2300
Input Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=15V, V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=10V, I
D
=3.5A, V =4.5V
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=250 uA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 10V
Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5.0A
On-State Drain Current
V
DS
=5V, V
GS
=4.5A
Forward Transconductance
V
DS
=5V, I
D
=5A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
20
-
V
0.6
0.78
1.5
V
-
-
-
-
-
1
100
nA
m
uA
A
S
32
50
62
75
40
60
888
144
115
F
P
31.8
50.3
31.9
16.8
2.5
5.4
0.825
1.2
nS
nS
nS
nS
nc
nc
nc
V
-
14.5
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=20V, V
GS
=0V
-
-
-
-
5
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Delay Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
V
GS
=2.5V, I
D
=4.0A
V
GS
=1.8V, I
D
=1.0A
GEN
=4.5V,V =10V, I =1A, R =10 ,R =6
DD
D
L
V
GS
GS
Gate-Source Charge
V
DS
=10V, I
D
=3.5A, V =4.5V
GS
Gate-Drain Charge
V
DS
=10V, I
D
=3.5A, V =4.5V
Drain-Source Diode Forward Voltage
GS
V
GS
=0V, I
S
=1.25A
<_
<_
<_
GEN
=4.5V,V =10V, I =1A, R =10 ,R =6
DD
D
L
V
GS
GEN
=4.5V,V =10V, I =1A, R =10 ,R =6
DD
D
L
V
GS
GEN
=4.5V,V =10V, I =1A, R =10 ,R =6
DD
D
L
V
GS
WEITRON
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WT-2300
WE IT R ON
DS
V , DRAIN-TO-SOURCE VOLTAGE(V)
-I ,DRAIN CURRENT(A)
D
FIG.1. Output Characteristics
0 5 10 15 20 25 30
1000
800
600
400
200
0
10
8
6
4
2
0
0
1
2
3
4
5
6
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
-25
25
75
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
FIG.2 Transfer Characteristics
FIG.4 On-Resistance Variation with
Temperature
FIG.3 Capacitance
-V =4.5V
GS
I =5A
D
Coss
Ciss
Crss
-55 C
25 C
V , GATE-TO-SOURCE VOLTAGE(V)
GS
V , GATE-TO-SOURCE VOLTAGE(V)
T ( C)
GS
j
C ,CAPACITANCE( F)
R , ON-RESISTANCE(
)
I , DRAIN CURRENT(A)
D
DS(ON)
P
FIG.5 Gate Threshold Variation
with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
GATE-SOURCE THRESHOLD VOLTAGE(V)
V ,NORMALIZED
BV ,NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE(V)
th
DSS
V =V
DS
I =250uA
D
GS
I =250uA
D
V =10.5~2.5V
GS
V =1.5V
GS
T =125 C
j
WEITRON
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WT-2300
WE IT R ON
FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
V ,BODY DIODE FORWARD VOLTAGE(V)
DS
V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
I , DRAIN CURRENT(A)
g ,TRANSCONDUCTANCE(S)
V ,GATE TO SOURCE VOLTAGE(V)
I ,SOURCE-DRAIN CURRENT(A)
FS
GS
S
D
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
20
25
15
10
5
0
0
5 10 15 20 25 30 35 40
50
10
1
0.1
0.03
0.1
1
10 20
50
25
20
15
10
30
0
0
5
10
15
20
25
5
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
V =5V
DS
T
J
=25 C
I =3.5A
D
V =10V
DS
1
R
DS
(ON
) L
imi
t
10m
s
100
ms
1s
DC
T =25 C
C
V =4.5V
Single Pulse
GS
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
INVE R TE D
WEITRON
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WT-2300
WE IT R ON
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
NORMALIZED TRANSIENT
THERMAL RESISTANCE
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse
on
P
DM
t
1
t
2
0.01
0.02
0.5
0.2
0.1
0.05
1. R j
A
(t)=r (t) * R j
2. R j =See Datasheet
3. Tj
M
-TA = P
DM
* R j (t)
4. Duty Cycle, D=t /t
1
2
A
A
A
WT-2300
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
T OP V IE W
K
C
SOT-23 Package Outline Dimensions
Unit:mm
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