WEITRON
http://www.weitron.com.tw
WT6920AM
Surface Mount N-Channel
D1
8
7
6
5
1
2
3
4
D1
D2
D2
S1
G1
S2
G2
SO-8
DRAIN CURRENT
5 AMPERES
1
Features:
*Super high dense cell design for low R
DS(ON)
*Dual N MOSFET Package
*Simple Drive Requirement
*SO-8 Package
R
DS(ON)
<35m
@V
GS
= 10V
Enhancement Mode MOSFET
R
DS(ON)
<62m
@V
GS
= 4.5V
1/6
02-Aug-05
Rating
Symbol
Value
Unite
V
DS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
,Tstg
I
S
-55 to 150
C
A
V
V
A
W
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
A
=25 C)
Pulsed Drain Current
Drain-Source Diode Forward Current
Power Dissipation
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
WT6920AM=STM6920A
40
20
5
A
4.2
20
2
1.44
1.7
62.5
-
+
(T
A
=70 C)
(T
A
=25 C)
(T
A
=70 C)
(2)
(1)
(1)
(1)
(1)
40 VOLTAGE
DRAIN SOURCE VOLTAGE
Lead(Pb)-Free
P b
WEITRON
http://www.weitron.com.tw
WT6920AM
Input Capacitance
V
DS
=25V,V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=25V,V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=25V,V
GS
=0V, f=1MHZ
Total Gate Charge
V
DS
=20V, I
D
=6A,V =10V
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250A
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=250A
Gate-Source Leakage Current
V
DS
=0V,V
GS
= 20V
Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
On-State Drain Current
V
DS
=5V,V
GS
=10V
Forward Transconductance
V
DS
=5V, I
D
=6A
Static
Dynamic
Switching
(3)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
V
SD
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
Qg
Qgs
Qgd
40
-
V
1
1.8
3
V
-
-
-
-
-
1
100
nA
m
uA
A
S
24
35
45
62
759
92
70
F
P
9.2
15.5
4.4
15.9
7.6
-
-
2.2
4.8
0.8
1.2
nS
nc
V
-
21
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=32V,V
GS
=0V
-
-
-
10
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Delay Time
Turn-Off Time
(2)
(3)
+
+
-
-
-
-
Rise Time
t
t
Fall Time
f
r
Note:
2. Pulse Test : PW 300us, Duty Cycle 2%.
1. Surface Mounted on FR4 Board t 10sec.
3. Guaranteed by Design, not Subject to Production Testing.
V
GS
=4.5V, I
D
=5A
=10V,V =20V, I
D
=1A, R
GEN
=3.3
DD
V
GS
=10V,V =20V, I
D
=1A, R
GEN
=3.3
DD
V
GS
=10V,V =20V, I
D
=1A, R
GEN
=3.3
DD
V
GS
=10V,V =20V, I
D
=1A, R
GEN
=3.3
DD
V
GS
GS
GS
Gate-Source Charge
Gate-Drain Charge
V
DS
=20V, V
GS
=10V, I
D
=6A
V
DS
=20V, V
GS
=10V, I
D
=6A
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.7A
<_
<_
<_
V
DS
=20V, I
D
=6A,V =4.5V
2/6
02-Aug-05
WEITRON
http://www.weitron.com.tw
WT6920AM
W
WEE IITT RR O
ON
N
I
D
, Drain Curr
ent(A)
C, Capacitance (pF)
I
D
, Drain Curr
ent (A)
Ciss
Coss
1500
1200
900
600
300
0
20
16
12
8
4
0
0
2
4
6
8
10
12
V
GS
=10,8,5V
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
Tj( C)
-25
25
75
V
GS
=10V
I
D
=6A
Crss
25
20
15
10
5
0
0
1
2
3
4
5
6
Tj=125 C
25 C
-55 C
V
GS
=4V
V
GS
=3V
On-Resistance
R
DS(ON)
,
( Normalized )
Fig.1 Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
Fig.2 Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig.4 On-Resistance Variation
with Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
0 5 10 15 20 25 30
Vth, Normalized
Gate-Sour
ce Thr
eshold V
oltage
BV
DSS
, Normalized
Drain-Sour
ce Br
eakdown V
oltage
-50 -25
0
25 50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
V
DS
=V
GS
I
D
=250uA
3/6
02-Aug-05
Fig.5 Gate Threshold Variation
Fig.6 Breakdown Voltage Variation
with Temperature
Tj, Junction Temperature (C)
Tj, Junction Temperature (C)
with Temperature
WEITRON
http://www.weitron.com.tw
WT6920AM
W
WEE IITT RR O
ON
N
FIG.7 Transconductance Variation
with Drain Current
FIG.9 Gate Charge
FIG.10 Maximum Safe Operating Area
FIG.8 Body Diode Forward Voltage
Variation with Source Current
I ,DRAIN-SOURCE CURRENT(A)
Q ,TOTAL GATE CHARGE(nC)
V ,BODY DIODE FORWARD VOLTAGE(V)
DS
V ,DRAIN-SOURCE CURRENT(V)
DS
SD
g
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
I
)
S
(
E
C
N
A
T
C
U
D
N
O
C
S
N
A
R
T
,
g
)
V
(
E
G
A
T
L
O
V
E
C
R
U
O
S
O
T
E
T
A
G
,
V
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
-
E
C
R
U
O
S
,
I
S
F
S
G
S
D
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
INVE R TE D
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
2
4
6
8
10 12 14 16
V
DS
=20V
I
D
=6A
T
J
=25C
50
10
1
0.1
0.03
0.1
1
10 20
50
R
DS
(ON) Limit
10ms
100ms
1s
DC
V
GS
=10V
Single Pulse
Tc=25 C
15
12
9
6
18
0
0
5
10
15
20
25
3
V
DS
=5V
4/6
02-Aug-05
WEITRON
http://www.weitron.com.tw
WT6920AM
W
WEE IITT RR O
ON
N
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
5/6
02-Aug-05
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
N
o
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
R
esi
st
an
ce
Single Pulse
on
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t
1
/t
2
0.01
0.02
0.5
0.2
0.1
0.05
WEITRON
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WT6920AM
6/6
02-Aug-05
SO-8 Package Outline Dimensions
Unit:mm
1
(4X)
B
eB
E1
L
7(4X)
A
2
1
A
A
C
SYMBOLS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
1.27 BSC
0.60
0
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
0.80
8
MILLIMETERS
A
A1
B
C
D
E1
eB
e
L
7
D
e
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