ChipFind - документация

Электронный компонент: WTC2302

Скачать:  PDF   ZIP

Document Outline

WEITRON
http:www.weitron.com.tw
DRAIN CURRENT
3.2 AMPERS
DRAIN SOUCE VOLTAGE
20 VOLTAGE
Features:
*Super High Dense Cell Design For Low R
DS(ON)
R
DS(ON)
<90m
@V
GS
=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-23 Package
Maximum Ratings
(
(T
T
A
A
=
=2
25
5
U
Un
nlle
es
ss
s O
Otth
he
errw
wiis
se
e S
Sp
pe
ec
ciiffiie
ed
d))
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
3
,V
GS
@4.5V(T
A
3.2
,V
GS
@4.5V(T
A
I
D
2.6
Pulsed Drain Current
1,2
I
DM
10
A
Total Power Dissipation(T
A
=25
)
P
D
1.38
W
Maximum Junction-ambient
3
R
JA
90
/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55~+150
Device Marking
WTC2302=2302
WTC2302
N-Channel Enhancement
Mode Power MOSFET
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
09-May-05
1/6
WTC2302
WEITRON
http:www.weitron.com.tw
Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=250A
V
(BR)DSS
20
-
-
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=250
A
V
GS(Th)
0.5
-
1.2
V
Gate-Source Leakage Current
V
GS
= 12V
I
GSS
-
-
100
nA
-
-
1
Drain-Source Leakage Current(T
j
=25)
V
DS
=20V,V
GS
=0
Drain-Source Leakage Current(T
j
=70)
V
DS
=20V,V
GS
=0
I
DSS
-
-
10
A
Drain-Source On-Resistance
V
GS
=4.5V,I
D
=3.6A
V
GS
=2.5V,I
D
=3.1A

R
DS(on)
-
-
-
-
85
115
m
Forward Transconductance
V
DS
=5V,I
D
=3.6A
g
fs
-
6
-
S
Dynamic
Input Capacitance
V
GS
=0V,V
DS
=10V,f=1.0MHz
C
iss
-
145
-
Output Capacitance
V
GS
=0V,V
DS
=10V,f=1.0MHz
C
oss
-
100
-
Reverse Transfer Capacitance
V
GS
=0V,V
DS
=10V,f=1.0MHz
C
rss
-
50
-
pF
2/6
09-May-05
WTC2302
Switching
Turn-on Delay Time
2
V
DS
=10V,V
GS
=5V,I
D
=3.6A,R
D
=2.8,R
G
=6
V
DS
=10V,V
GS
=5V,I
D
=3.6A,R
D
=2.8,R
G
=6
V
DS
=10V,V
GS
=5V,I
D
=3.6A,R
D
=2.8,R
G
=6
V
DS
=10V,V
GS
=5V,I
D
=3.6A,R
D
=2.8,R
G
=6
t
d
(on)
-
5.2
-
Rise Time
tr
-
37
-
Turn-off Delay Time
t
d
(off)
-
15
-
Fall Time
tf
-
5.7
-
ns
Total Gate Charge
2
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
Q
g
-
4.4
-
Gate-Source Charge
Q
gs
-
0.6
-
Gate-Drain Change
Q
gd
-
1.9
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V,I
S
=1.6A
V
SD
-
-
1.2
V
A
A
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
1
V
D
=V
G
=0V,V
S
=1.2V
I
S
-
1
I
SM
-
-
-
10
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width300s, duty cycle2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270/W when mounted on min, copper pad.
3/6
09-May-05
WEITRON
http:www.weitron.com.tw
WEITRON
http://www.weitron.com.tw
WTC2302
V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
D
)
A
(

T
N
E
R
R
U
C
N
I
A
R
D
,
I
D
)
A
(

t
n
e
r
r
u
C

n
i
a
r
D
,
V
DS
,Drain-to-source Voltage(V)
FIG.1 Typical Output Characteristics
V
GS
,Gate-to-source Voltage(V)
R
)
n
o
(
s
D
)
m
(
100
90
80
70
60
2 3 4 5
Fig.3 On-Resistance v.s. Gate Voltage
R

d
e
z
i
l
a
m
r
o
N
)
n
o
(
s
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
Fig.4 Normalized OnResistance
Fig.2 Typical Output Characteristics
I
D
= 3.1A
T
A
= 25C
V
DS
,Source-to-Drain Voltage(V)
I
F
)
A
(
10.0
1.0
0
0 0.5 0.9 1.3
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
V
)
h
t
(
S
G
)
V
(
1.4
1.0
0.6
0.2
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= 3.6A
V
G
= 4.5V
T
j
= 25C
T
j
= 150C
4.5V
3.5V
3.0V
2.5V
V
G
=2.0V
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5
0.0 0.5 1.0 1.5 2.0 2.5
TA=25C
4.5V
3.5V
3.0V
2.5V
V
G
=2.0V
5
4
3
2
1
0
TA=150C
4/6
09-May-05
WEITRON
http://www.weitron.com.tw
WTC2302
Q
G
, Total Gate Charge(nC)
V
S
G

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e
(
V
)
12
10
8
6
4
2
0
0 2 4 6 8 10
Fig 7. Gate Charge Characteristics
V
DS
= 4.5V
I
D
= 3.6A
V
DS
, Drain-to-Source Voltage(V)
I
D
)
A
(
100
10
1
0.1
0.01
0.1 1 10 100
Fig 9. Maximum Safe Operation Area
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
T
A
= 25C
Single Pulse
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
1ms
10ms
100ms
Is
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R

l
a
m
r
e
h
T

d
e
z
i
l
a
m
r
o
N
a
j
)
1
0.1
0.01
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
1000
100
0
1 5 9 13 17 21 25 29
Fig 8. Typical Capacitance Characteristics
f = 1.0MHz
0.2
0.1
0.05
0.01
Single pulse
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
ju
+ T
u
R
ja
=270C / W
t
T
Crss
Coss
Ciss
VG
4.5V
Q
G
Q
GS
Q
GD
Charge
Q
5/6
09-May-05
WEITRON
http://www.weitron.com.tw
WTC2302
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
SOT-23
SOT-23 Outline Dimension
6/6
09-May-05