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Электронный компонент: WTD9575

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WEITRON
http:www.weitron.com.tw
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
Features:
*Super High Dense Cell Design For Low R
DS(ON)
R
DS(ON)
<90m @V
GS
=-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
Maximum Ratings
(T
A
=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-60
V
Gate-Source Voltage
V
GS
25
Continuous Drain Current, (V
GS
@10V, T
C
=25C)
, (V
GS
@10V, T
C
=100C)
-15
I
D
-9.5
Pulsed Drain Current
1
I
DM
-45
A
Total Power Dissipation(T
C
=25C)
P
D
36
W
Maximum Thermal Resistace Junction-ambient
R
JA
110
C/W
Maximum Thermal Resistace Junction-case
R
JC
3.5
C/W
Operating Junction and Storage Temperature Range
TJ,Tstg
-55~+150
C
Device Marking
WTD9575=9575
WTD9575
Surface Mount P-Channel Enhancement
Mode POWER MOSFET
2
3
1 GATE
SOURCE
DRAIN
1/6
01-Aug-05
D-PAK / (TO-252)
1
1. GATE
2.4 DRAIN
3. SOURCE
2
3
4
Lead(Pb)-Free
P b
WEITRON
http:www.weitron.com.tw
Electrical Characteristics
(T
A
= 25 Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
=0,I
D
=-250A
BV
DSS
-60
-
-
Gate-Source Threshold Voltage
V
DS
=V
GS
,I
D
=-250A
V
GS(Th)
-1.0
-
-3.0
V
Gate-Source Leakage current
V
GS
=25V
I
GSS
I
DSS
-
-
100
nA
-
-
-1
Drain-Source Leakage Current(Tj=25C)
V
DS
=-60V,V
GS
=0
V
DS
=-48V,V
GS
=0
Drain-Source Leakage Current(Tj=70C)
-
-
-25
A
Drain-Source On-Resistance
V
GS
=-10V,I
D
=-12A
V
GS
=-4.5V,I
D
=-9A
R
DS(on)
-
-
-
-
90
120
m
Forward Transconductance
V
DS
=-10V,I
D
=-9A
gfs
-
14
-
S
Dynamic
Input Capacitance
V
GS
=0V,V
DS
=-25V,f=1.0MHz
V
GS
=0V,V
DS
=-25V,f=1.0MHz
V
GS
=0V,V
DS
=-25V,f=1.0MHz
C
iss
-
1660
2660
Output Capacitance
C
oss
-
160
-
Reverse Transfer Capacitance
C
rss
-
100
-
pF
2/6
01-Aug-05
WTD9575
Switching
Turn-on Delay Time
2
V
DS
=-30V,V
GS
=-10V,I
D
=-9A,R
D
=3.3,R
G
=3.3
V
DS
=-30V,V
GS
=-10V,I
D
=-9A,R
D
=3.3,R
G
=3.3
V
DS
=-30V,V
GS
=-10V,I
D
=-9A,R
D
=3.3,R
G
=3.3
V
DS
=-30V,V
GS
=-10V,I
D
=-9A,R
D
=3.3,R
G
=3.3
V
DS
=-48V,V
GS
=-4.5V,I
D
=-9A
V
DS
=-48V,V
GS
=-4.5V,I
D
=-9A
V
DS
=-48V,V
GS
=-4.5V,I
D
=-9A
t
d(on)
t
d(off)
-
10
-
Rise Time
t
r
t
f
-
19
-
Turn-off Delay Time
-
46
-
Fall Time
-
53
-
ns
Total Gate Charge
2
Q
g
Q
gs
Q
gd
-
17
27
Gate-Source Charge
-
5
-
Gate-Source Change
-
6
-
nC
Source-Drain Diode Characteristics
Forward On Voltage
2
V
GS
=0V,I
S
=-9A
V
SD
-
-
-1.2
V
Note: 1. Pulse width limited by safe operating area.
2. Pulse width 300s, duty cycle 2%.
Reverse Recovery Time
T
rr
-
56
-
ns
Reverse Recovery Charge
Q
rr
-
159
-
nC
3/6
01-Aug-05
WEITRON
http:www.weitron.com.tw
WTD9575
V
GS
=0V,I
S
=-9A,dl/dt=100A/s
V
GS
=0V,I
S
=-9A,dl/dt=100A/s
WEITRON
http://www.weitron.com.tw
WTD9575
-V
DS
,DRAIN-TO-SOURCE VOLTAGE(V)
I
-
D
)
A
(

T
N
E
R
R
U
C
N
I
A
R
D
,
I
D
)
A
(

t
n
e
r
r
u
C

n
i
a
r
D
,
V
DS
,Drain-to-source Voltage(V)
FIG.1 Typical Output Characteristics
-V
GS
,Gate-to-source Voltage(V)
R
)
n
o
(
s
D
)
m
(
1400
1000
1200
600
800
400
200
1 4 7 10
Fig.3 On-Resistance v.s. Gate Voltage
R

d
e
z
i
l
a
m
r
o
N
)
n
o
(
s
D
1.6
1.8
2.0
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
Fig.4 Normalized OnResistance
Fig.2 Typical Output Characteristics
I
D
= -9A
T
C
= 25C
-V
DS
,Source-to-Drain Voltage(V)
I
-
S
)
A
(
12.5
15.0
7.5
10.0
5.0
2.5
0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig.5 Forward Characteristics of
Reverse Diode
T
j
,Junction Temperature(C)
T
j
,Junction Temperature(C)
V
-
)
h
t
(
S
G
)
V
(
2.0
1.5
1.0
0.5
2.5
-50 0 50 100 150
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
I
D
= -12A
V
G
= -10V
T
j
= 25C
T
j
= 150C
-10V
-6.0V
-5.0V
-4.5V
15
20
30
35
40
45
50
55
25
10
5
0
0 2 4 6 8 10
T
C
=25C
4/6
01-Aug-05
V
G
=-3.0V
-10V
-6.0V
-5.0V
-4.5V
15
20
30
35
40
25
10
5
0
0 2 4 6 8 10 12
T
C
=150C
V
G
=-3.0V
WEITRON
http://www.weitron.com.tw
WTD9575
Q
G
, Total Gate Charge(nC)
V
-
S
G

,

G
a
t
e

t
o

S
o
u
r
c
e

V
o
l
t
a
g
e
(
V
)
12
10
8
6
2
4
0
0 10 20 30 40
Fig 7. Gate Charge Characteristics
V
DS
= -48V
I
D
= -9A
-V
DS
, Drain-to-Source Voltage(V)
I
-
D
)
A
(
100
10
1
0.1
0.1 1 10 100 1000
Fig 9. Maximum Safe Operation Area
Fig 11. Switching Time Circuit
Fig.12 Gate Charge Waveform
T
C
= 25C
Single Pulse
V
DS
90%
10%
V
GS
t
r
t
d(on)
t
d(off)
t
f
1ms
100us
10ms
100ms
DC
t, Pulse Width(s)
R
(
e
s
n
o
p
s
e
R

l
a
m
r
e
h
T

d
e
z
i
l
a
m
r
o
N
c
j
)
1
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig 10. Effective Transient Thermal Impedance
Duty factor = 0.5
-V
DS
, Drain-to-Source Voltage(V)
F
p
(
C
)
10000
1000
100
10
1 5 9 13 17 21 25 29
Fig 8. Typical Capacitance Characteristics
f = 1.0MHz
0.2
0.1
P
DM
Duty factor = t / T
Peak Tj=P
DM
x R
jc
+ T
c
t
T
Crss
Coss
Ciss
VG
-4.5V
Q
G
Q
GS
Q
GD
Charge
Q
5/6
01-Aug-05
Single pulse
0.01
0.02
0.05