ChipFind - документация

Электронный компонент: W24258Q-70LE

Скачать:  PDF   ZIP
W24258
32K
8 CMOS STATIC RAM
Publication Release Date: November 1998
- 1 -
Revision A8
GENERAL DESCRIPTION
The W24258 is a normal speed, very low power CMOS static RAM organized as 32768
8 bits that
operates on a wide voltage range from 2.7V to 5.5V power supply. The W24258 family, W24258-
70LE and W24258-70LI, can meet requirement of various operating temperature. This device is
manufactured using Winbond's high performance CMOS technology.
FEATURES
Low power consumption:
-
Active: 350 mW (max.)
-
Standby: 6
W (max.)/3V
25
W (max.)/5V
Access time: 70 nS (max.)/5V
100 nS (max.)/3V
Single 3V/5V power supply
Fully static operation
All inputs and outputs directly TTL compatible
Three-state outputs
Battery back-up operation capability
Data retention voltage: 2V (min.)
Packaged in 28-pin 600 mil DIP, 330 mil SOP
and standard type one TSOP (8 mm
13.4
mm)
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28-pin
DIP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
1
0
1
1
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28-pin
TSOP
OE
A11
A9
A8
A13
WE
V
DD
A14
A12
A7
A6
A5
A4
A3
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
A0
A1
A2
V
SS
BLOCK DIAGRAM
CLK GEN.
PRECHARGE CKT.
CORE CELL ARRAY
512 ROWS
64 X 8 COLUMNS
DATA
CNTRL.
CLK
GEN.
R
O
W
D
E
C
O
D
E
R
A12
A14
A2
A3
A4
A5
A6
A7
A13
A11
I/O CKT.
COLUMN DECODER
OE
WE
CS
I/O1
I/O8
A10 A1 A0 A8 A9
PIN DESCRIPTION
SYMBOL
DESCRIPTION
A0
-
A14
Address Inputs
I/O1
-
I/O8
Data Inputs/Outputs
CS
Chip Select Input
WE
Write Enable Input
OE
Output Enable Input
V
DD
Power Supply
V
SS
Ground
W24258
- 2 -
TRUTH TABLE
CS
OE
WE
MODE
I/O1
-
I/O8
V
DD
CURRENT
H
X
X
Not Selected
High Z
I
SB
, I
SB
1
L
H
H
Output Disable
High Z
I
DD
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to V
SS
Potential
-0.5 to +7.0
V
Input/Output to V
SS
Potential
-0.5 to V
DD
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
C
Operating Temperature
LE
-20 to 85
C
LI
-40 to 85
C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 5V
10%; V
DD
= 3V
10%; V
SS
= 0V; T
A
(
C) = -20 to 85 for LE; -40 to 85 for LI)
PARAMETER
SYM.
TEST CONDITIONS
5V
10%
3V
10%
UNIT
MIN.
MAX.
MIN.
MAX.
Input Low Voltage
V
IL
-
-0.5
+0.8
-0.5
+0.6
V
Input High Voltage
V
IH
-
+2.2
V
DD
+0.5
+2.0
V
DD
+0.5
V
Input Leakage
Current
I
LI
V
IN
= V
SS
to V
DD
-1
+1
-1
+1
A
Output Leakage
Current
I
LO
V
I/O
= V
SS
to V
DD,
CS = V
IH
(min.) or
OE = V
IH
(min.) or
WE = V
IL
(max.)
-1
+1
-1
+1
A
Output Low Voltage
V
OL
I
OL
= +2.1 mA
-
0.4
-
0.4
V
Output High
Voltage
V
OH
I
OH
= -1.0 mA
2.4
-
2.2
-
V
W24258
Publication Release Date: November 1998
- 3 -
Revision A8
Operating Characteristics, continued
PARAMETER SYM.
TEST CONDITIONS
5V
10%
3V
10%
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
Operating
Power Supply
Current
I
DD
CS = V
IL
(max.), I/O = 0
mA,
Cycle = min., Duty = 100%
-
-
70
-
-
30
mA
Standby
Power Supply
Current
I
SB
CS
= V
IH
(min.),
Cycle =
min., Duty = 100%
-
-
3
-
-
1
mA
I
SB
1
CS
V
DD
-0.2V
-
0.7
5
-
0.5
2
A
Note: Typical parameter is measured under ambient temperature T
A
= 25
C and V
DD
= 5V / 3V.
CAPACITANCE
(V
DD
= 5V, T
A
= 25
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
3V
10%, 0V to 2.4V
5V
10%, 0V to 3.0V
Input Rise and Fall Times
5 nS
Input and Output Timing Reference Level
1.5V
Output Load
See the drawing below
AC Test Loads and Waveform
90%
90%
5 nS
10%
5 nS
10%
OUTPUT
OUTPUT
2.4V/3.0V
0V
100 pF
Including
Jig and
Scope
5 pF
Including
Jig and
Scope
1 TTL
1 TTL
CLZ,
OLZ,
CHZ, OHZ,
WHZ,
OW
(For T
T
T
T
T
T
)
W24258
- 4 -
AC Characteristics, continued
(V
DD
= 5V
10%; V
DD
= 3V
10%; V
SS
= 0V; T
A
(
C) = -20 to 85 for LE; -40 to 85 for LI)
Read Cycle
PARAMETER
SYM.
5V
3V
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
70
-
100
-
nS
Address Access Time
T
AA
-
70
-
100
nS
Chip Select Access Time
T
ACS
-
70
-
100
nS
Output Enable to Output Valid
T
AOE
-
35
-
50
nS
Chip Selection to Output in Low Z
T
CLZ
*
10
-
15
-
nS
Output Enable to Output in Low Z
T
OLZ
*
5
-
5
-
nS
Chip Deselection to Output in High Z
T
CHZ
*
-
30
-
35
nS
Output Disable to Output in High Z
T
OHZ
*
-
30
-
35
nS
Output Hold from Address Change
T
OH
10
-
15
-
nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
SYM.
5V
3V
UNIT
MIN.
MAX.
MIN.
MAX.
Write Cycle Time
T
WC
70
-
100
-
nS
Chip Selection to End of Write
T
CW
50
-
70
-
nS
Address Valid to End of Write
T
AW
50
-
70
-
nS
Address Setup Time
T
AS
0
-
0
-
nS
Write Pulse Width
T
WP
50
-
70
-
nS
Write Recovery Time
CS, WE
T
WR
0
-
0
-
nS
Data Valid to End of Write
T
DW
30
-
50
-
nS
Data Hold from End of Write
T
DH
0
-
0
-
nS
Write to Output in High Z
T
WHZ
*
-
25
-
30
nS
Output Disable to Output in High Z
T
OHZ
*
-
25
-
30
nS
Output Active from End of Write
T
OW
5
-
10
-
nS
These parameters are sampled but not 100% tested
W24258
Publication Release Date: November 1998
- 5 -
Revision A8
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
Address
T
RC
T
AA
T
OH
T
OH
D
OUT
Read Cycle 2
(Chip Select Controlled)
CS
D
OUT
T
CLZ
T
ACS
CHZ
T
Read Cycle 3
(Output Enable Controlled)
Address
T
RC
CS
D
OUT
T
AA
OE
T
AOE
T
OLZ
T
OH
CLZ
T
CHZ
T
T
ACS
T
OHZ