2SB633
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SD613
ABSOLUTE MAXIMUM RATINGS (T
A
=25
)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
-100
-85
-5
-6
40
150
-50~150
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (T
A
=25
)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
I
CBO
I
EBO
h
FE1
V
CE(sat)
f
T
V
CB
= -100V , I
E
=0
V
EB
=- 5V , I
C
=
0
V
CE
= -5V , I
C
=-1A
I
C
=-4A , I
B
=-0.4A
V
CE
= -2V , I
C
=-0.5A
40
8
-10
10
320
-2.0
A
A
V
M
HZ
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
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