GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
500
V
V
CEO
Collector-emitter voltage (open base)
-
300
V
I
C
Collector current (DC)
-
7
A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation
T
mb
25
-
50
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0A; I
B
= 0.3A
-
2
V
V
F
Diode forward voltage
I
F
= 3.0A
1.5
2.0
V
t
f
Fall time
I
C
=3A,I
B1
=-I
B2
=0.3A,V
CC
=60V
0.4
1.0
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
500
V
V
CEO
Collector-emitter voltage (open base)
-
300
V
V
EBO
Emitter-base oltage (open colloctor)
5
V
I
C
Collector current (DC)
-
7
A
I
B
Base current (DC)
-
2
A
P
tot
Total power dissipation
Tmb
25
-
50
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
-
150
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
I
CBO
Collector-base cut-off current
V
CB
=400V
-
0.2
mA
I
EBO
Emitter-base cut-off current
V
EB
=5V
-
0.2
mA
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=1mA
300
V
V
CEsat
Collector-emitter saturation voltages
I
C
= 2.0A; I
B
= 0.5A
-
2
V
h
FE
DC current gain
I
C
= 0.8A; V
CE
= 5V
15
100
f
T
Transition frequency at f = 5MHz
I
C
= 1A; V
CE
= 12V
25
-
MHz
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V
120
-
pF
t
on
On times
I
C
=3A,I
B1
=-I
B2
=0.3A,V
CC
=60V
1.0
us
t
s
Tum-off storage time
I
C
=3A,I
B1
=-I
B2
=0.3A,V
CC
=60V
2.5
us
t
f
Fall time
I
C
=3A,I
B1
=-I
B2
=0.3A,V
CC
=60V
0.4
1.0
us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
2SC3039
Silicon Epitaxial Planar Transistor
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