2SC4596E
GENERAL DESCRIPTION
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
100
V
V
CEO
Collector-emitter voltage (open base)
-
60
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation
T
mb
25
-
25
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 2A; I
B
= 0.2A
-
1.5
V
V
BE
Emitter forward voltage
I
E
= 2A
1.5
V
t
f
Fall time
I
C
=2A,I
B1
=-I
B2
=0.2A,V
CC
=30V
0.5
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
100
V
V
CEO
Collector-emitter voltage (open base)
-
60
V
V
EBO
Emitter-base oltage (open colloctor)
5
V
I
C
Collector current (DC)
-
5
A
I
B
Base current (DC)
-
1
A
P
tot
Total power dissipation
Tmb 25
-
25
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
-
150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CBO
Collector-base cut-off current
V
CB
=100V
0.1
mA
I
EBO
Emitter-base cut-off current
V
EB
=5V
0.1
mA
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=1mA
60
V
V
CEsat
Collector-emitter saturation voltages
I
C
=2A; I
B
= 0.2A
1.5
V
h
FE
DC current gain
I
C
=1A; V
CE
= 5V
100
200
f
T
Transition frequency at f = 30MHz
I
C
=0.5A; V
CE
= 10V
120
MHz
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V
80
pF
t
on
On times
IC=2A,IB1=-IB2=0.2A,VCC=30V
0.5
us
t
s
Tum-off storage time
IC=2A,IB1=-IB2=0.2A,VCC=30V
1.5
us
t
f
Fall time
IC=2A,IB1=-IB2=0.2A,VCC=30V
0.5
us
ELECTRICAL CHARACTERISTICS
TO-220F
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
SILICON EPITAXIAL PLANNAR TRANSISTOR
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