GENERAL DESCRIPTION
High voltage switching application.
Igniter application.
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
300
V
V
CEO
Collector-emitter voltage (open base)
-
250
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation
T
mb
25
-
30
W
V
CEsat
Collector-emitter saturation voltage
-
V
V
F
Diode forward voltage
I
F
= 4.5A
V
t
f
Fall time
I
Csat
= 4.5A; f = 16KHz
-
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
300
V
V
CEO
Collector-emitter voltage (open base)
-
250
V
V
EBO
Emitter-base oltage (open colloctor)
I
C
Collector current (DC)
-
6
A
I
B
Base current (DC)
-
1
A
P
tot
Total power dissipation
Tmb 25
-
30
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
-
150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CBO
Collector-base cut-off current
VCB =300V; V
E
=0
-
0.5
mA
I
EBO
Emitter-base cut-off current
VEB =5V, Ic =0
-
0.5
mA
V
(BR)CEO
Collector-emitter breakdown voltage
Ic
=0.5A, L=40mH
250
V
V
CEsat
Collector-emitter saturation voltages
I
C
= 4A; I
B
= 0.04A
-
2..0
V
h
FE1
DC current gain
I
C
= 4A, V
CE
= 2V
200
h
FE2
DC current gain
I
C
= 2A; V
CE
= 2V
2000
-
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V
-
pF
t
on
On times
1
us
t
s
Tum-off storage time
8
us
tf
Fall time
5
us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
2SD1088
SILICON NPN TRIPLE DIFFUSED TRANSISTOR
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