FEATURES
Power dissipation
P
CM
: 0.4 W Tamb=25
Collector current
I
CM
: 0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A I
E
=0
50
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 0. 1 mA I
B
=0
45
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=35 V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3 V I
C
=0
0.1
A
DC current gain(note)
H
FE 1
V
CE
= 5 V, I
C
= 1mA
60
1000
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 100mA, I
B
= 5 mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 100 mA, I
B
= 5mA
1
V
Transition frequency
f
T
V
CE
= 5 V, I
C
= 10mA
f =
30MHz
150
MHz
CLASSIFICATION OF H
FE(1)
Rank
A
B
C
D
Range
60-150
100-300
200-600
400-1000
1
2
3
TO 92
1.EMITTER
2.BASE
3.COLLECTOR
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
9014
NPN SILICON TRANSISTOR
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