GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
1500
V
V
CEO
Collector-emitter voltage (open base)
600
V
I
C
Collector current (DC)
5
A
I
CM
Collector current peak value
7.5
A
P
tot
Total power dissipation
T
mb
25
125
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5A; I
B
= 2.0A
1.0
V
I
csat
Collector saturation current
f = 16KHz
A
V
F
Diode forward voltage
I
F
= 4.5A
1.5
V
t
f
Fall time
I
C
=4.5A,I
B1
=-1/2I
B2
=1.8A,V
CC
=100V
1.0
s
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
1500
V
V
CEO
Collector-emitter voltage (open base)
600
V
V
EBO
Emitter-base voltage(open collector)
5
V
I
C
Collector current (DC)
5
A
I
B
Base current (DC)
2
A
I
BM
Base current peak value
4
A
P
tot
Total power dissipation
Tmb 25
125
W
T
stg
Storage temperature
-55
150
T
j
Junction temperature
150
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
CE
Collector-emitter cut-off current
V
BE
= 0V; V
CE
= V
CESMmax
1.0
mA
I
CES
V
BE
= 0V; V
CE
= V
CESMmax
2.0
mA
T
j
= 125
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0A; I
C
= 100mA
V
L = 25mH
V
CEsat
Collector-emitter saturation voltages
I
C
= 4.5A; I
B
= 2.0A
1.0
V
V
BEsat
Base-emitter satuation voltage
I
C
= 4.5A; I
B
= 2A
1.5
V
h
FE
DC current gain
I
C
= 1.0A; V
CE
= 5V
8
30
V
F
Diode forward voltage
I
F
= 4.5A
1.5
V
f
T
Transition frequency at f = 1MHz
I
C
= 0.1A; V
CE
= 10V
3
MHz
C
c
Collector capacitance at f = 1MHz
V
CB
= 10V
pF
t
s
Switching times(16KHz line deflecton circuit)
I
C
=4.5A,I
B1
=-1/2I
B2
=1.8A,V
CC
=100V
8.0
s
t
f
Turn-off storage time Turn-off fall time
C
=4.5A,I
B1
=-1/2I
B2
=1.8A,V
CC
=100V
1.0
s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
BU208D
SILICON DIFFUSED POWER TRANSISTOR
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