FEATURES
Power dissipation
P
CM
: 1.25 W
Tamb=25
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 700 V
Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000
A I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1000
A I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700 V I
E
=0
1000
A
Collector cut-off current
I
CEO
V
CE
= 400 V I
B
=0
500
A
Emitter cut-off current
I
EBO
V
EB
= 9 V I
C
=0
1000
A
H
FE 1
V
CE
= 10 V, I
C
= 150 mA
8
40
DC current gain(note)
H
FE 2
V
CE
= 10 V, I
C
= 0.5 mA
5
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=1000mA,I
B
= 250 mA
1
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=1000mA, I
B
= 250mA
1.2
V
Base-emitter voltage
V
BE
I
E
= 2000 mA
3
V
Transition frequency
f
T
V
CE
=10V,Ic=100mA
f =1MHz
5
MHz
Fall time
t
f
0.5
s
Storage time
t
s
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5
s
CLASSIFICATION OF H
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO 126
1.BASE
2.COLLECTOR
3.EMITTER
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
MJE13003
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
PDF 
ZIP