CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
700
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
9
V
Collector Current
Ic
4
A
Collector Power Dissipation
P
tot
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~+150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. MAX. UNIT
Collector-Emitter Sustaining Voltage
Ic=1m A, I
B
=0
400 - V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
E
=0 , Ic=1m A
700
-
V
Emitter-Base Breakdown Voltage
V
(BR) EBO
I
E
=1mA, I
C
=0
9
-
V
Collector Cut off current I
CBO
V
CB
=700V
, I
E
=0 -
00
A
Collector-Emitter Cut off Current I
CEO
V
CE
=400V
, I
B
=0 -
A
Emitter-Base Cut off Voltage I
EBO
V
EB
=
9V, Ic=0 -
A
DC Current Gain
hFE V
CE
=
Collector-Emitter Saturation Voltage V
CE
(sat) Ic=1A, I
B
=0.2
5A -
Base-Emitter Saturation Voltage V
BE
(sat)
Ic=
Fall Time t
f
Ic=2A
.9
S
Storage Time ts
I
B1
=
- I
B2
=0.4A -
4
S
Freqency Characteristics
f
T
V
CE
=10V, I
C
=0.5A, f=1MHz
5
-
MHz
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
NPN SILICON TRANSISTOR
ELECTRONIC TRANSFORMERS ,
POWER SWICHING CIRCUIT
ABSOLUTE MAXIMUM RATINGS ( T =25
A
)
C
o
ELECTRICAL CHARACTERISTICS (T =25 C
A
o
)
MJE13005B
Tamb=25 C
Tcase=25 C
o
o
1.5
75
W
10
-
10
1000
1000
40
5V, Ic=1A
1.0
V
1A, I
B
=0.25A
1.2
V
Base-emitter Voltage
V
BE
I
=
2
E
V
1A
1.25
V(BR)CEO
_
_
_
0
IB1=-IB2=0.4A
Ic=2A
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