1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
Vdc
Collector Base Voltage
VCBO
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
160
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
V(BR)CBO
180
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
6.0
--
Vdc
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100
C)
ICBO
--
--
--
--
50
50
nAdc
Adc
Emitter Cutoff Current
(VEB = .0 Vdc, IC = 0)
IEBO
--
50
nAdc
1
2
3
SOT 23 (TO 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Wing Shing Computer Components Co., (H.K .)L td. Tel: (8 52) 2341 9 2 7 6 Fax : (8 52) 27 9 7 8 153
Homepage:
http: / / www.wingshing.com
E-mail: wsccltd@ hk star.com
WMBT5551LT1
5
160
180
Transistor
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
80
80
--
--
250
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
--
--
--
0.15
0.20
Vdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
--
--
--
1.0
1.0
Vdc
WMBT5551LT1
80
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