NP
N EPITAXIAL SILICON TRANSISTORS WMBTA42
High Voltage Transistor
Die Size
0.6*0.6mm
GUARANTEED PROBED CHARACTERISTICS (T
A
=25
)
Limits
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-emitter
Breakdown Voltage
V
CEO
I
C
=1
.0mA 300 - - V
Collector-Base
Breakdown Voltage
V
CBO
I
C
=100
uA
Collector Cut-off
Current
I
CBO
V
CB
=2
60V - - 100 nA
Emitter Cut-off
Current
I
EBO
V
EB
=6V - -
100 nA
DC Current Gain
h
FE
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
30
40
40
-
-
Base-Emitter
Saturation Voltage
V
BEsat
I
C
=20mA, I
b
=2mA
-
-
V
Collector-Emitter
Saturation Voltage
V
CEsat
I
C
=20mA, I
B
=2mA - -
Transition
Frequency
f
r
V
CE
=20V,
I
C
=10mA,f=10MHz
50
-
-
MHz
Collector-Base
Capacitance
C
cb
V
CB
=20V, f=1MHz
-
-
3.0
pF
NOTES:
Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd.
Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage:
http://www.wingshing.com
E-mail: wsccltd@hkstar.com
SOT
--
--
23
Power Dissipation: 225mW
*
*
*
*
Collector Current: Max. 500mA
Bonding Pad Size
Emitoe 100*100mkm
Base 100*100mkm
1. BASE
2. EMITTER
3. COLLECTOR
300
-
-
V
0.90
0.35 V
PDF 
ZIP