Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
500
V
I
D
Continuous Drain Current(@T
C
= 25
C)
8.0
A
Continuous Drain Current(@T
C
= 100
C)
5.1
A
I
DM
Drain Current Pulsed
(Note 1)
32
A
V
GS
Gate to Source Voltage
25
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
320
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
13.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
P
D
Total Power Dissipation(@T
C
= 25 C)
134
W
Derating Factor above 25 C
1.08
W/C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
R
JC
Thermal Resistance, Junction-to-Case
-
-
0.93
C/W
R
CS
Thermal Resistance, Case to Sink
-
0.5
-
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
C/W
WFP840
Features
R
DS(on)
(Max 0.85 )@V
GS
=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150C)
General Description
This Power MOSFET is produced using Wisdom's advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
N-Channel MOSFET
Wisdom
Semiconductor
Symbol
2. Drain
3. Source
1. Gate
TO-220
1 2
3
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, I
AS
= 8.0A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25C
3. I
SD
8.0A, di/dt 300
A/s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width 300
s, Duty cycle 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.50
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
--
--
1
A
V
DS
= 400 V, T
C
= 125C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 25 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -25 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 4.0 A
--
0.70
0.85
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 4.0 A
--
7.0
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1570
2040
pF
C
oss
Output Capacitance
--
150
195
pF
C
rss
Reverse Transfer Capacitance
--
15
20
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250V, I
D
= 8.0 A,
R
G
= 25
--
25
60
ns
t
r
Turn-On Rise Time
--
75
160
ns
t
d(off)
Turn-Off Delay Time
--
125
260
ns
t
f
Turn-Off Fall Time
--
75
160
ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 8.0A,
V
GS
= 10 V
--
38
50
nC
Q
gs
Gate-Source Charge
--
8
--
nC
Q
gd
Gate-Drain Charge
--
13
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 8.0 A
--
--
1.5
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 8.0 A,
dI
F
/ dt = 100 A/
s
--
270
--
ns
Q
rr
Reverse Recovery Charge
--
1.89
--
C
Typical Characteristics
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 8 A
V
GS
,
Gat
e
-So
u
rc
e Volt
ag
e [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
iss
Ca
paci
t
an
ce [pF
]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
Drai
n-Source O
n
-
R
esi
s
t
ance
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250s Pulse Test
I
D
, D
r
ai
n C
u
r
r
e
nt [
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250s Pulse Test
2. T
C
= 25
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t [A
]
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
,
Rev
e
r
s
e D
r
a
i
n C
u
r
r
en
t [A]
V
SD
, Source-Drain voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 0 .9 3
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(
t
)
,
Th
er
m
a
l
R
e
s
pon
se
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
0
2
4
6
8
10
I
D
, Drai
n Curre
nt
[A
]
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 s
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, D
r
ai
n
Cur
r
ent [A]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 4.0 A
R
DS
(
O
N)
, (
N
or
m
a
l
i
z
ed)
Dr
ai
n-
Sour
ce O
n
-
R
es
i
s
tan
c
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
,
(
N
or
m
a
l
i
z
ed)
D
r
ai
n-
So
ur
c
e
Br
e
a
kd
own
Vol
t
age
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
C
harge
V
G
S
10V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
am
e Type
as D
U
T
C
harge
V
G
S
10V
Q
g
Q
gs
Q
gd
3m
A
V
G
S
D
U
T
V
D
S
300nF
50K
200nF
12V
S
am
e Type
as D
U
T
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
V
G
S
V
D
S
1
0
%
9
0
%
t
d
(
o
n
)
t
r
t
o
n
t
o
ff
t
d
(
o
ff)
t
f
V
D
D
1
0
V
V
D
S
R
L
D
U
T
R
G
V
G
S
E
A
S
=
L
I
A
S
2
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
I
D
t
p
E
A
S
=
L
I
A
S
2
----
2
1
E
A
S
=
L
I
A
S
2
----
2
1
----
2
1
--------------------
B
V
D
S
S
-V
D
D
B
V
D
S
S
V
D
D
V
D
S
B
V
D
S
S
t
p
V
D
D
I
A
S
V
D
S
(t)
I
D
(t)
T
im
e
1
0
V
D
U
T
R
G
L
L
I
D
I
D
t
p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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