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Электронный компонент: AG102

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Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
October
2003
AG102
GaAs MMIC Gain Block
Product Information
The Communications Edge
TM
Product Features
60 3000 MHz
14 dB Gain
2.1 dB Noise Figure
+36 dBm OIP3
Single +3.3 or +4.5 Supply
SOT-89 SMT Package
Internally matched to 50
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless

Product Description
The AG102 is a general-purpose gain block that offers
good dynamic range and low noise figure in a low-cost
surface-mount package. The combination of near-constant
OIP3 and low noise figure performance over frequency
makes it attractive for both narrowband and broadband
applications. The device combines dependable
performance with superb quality to maintain MTTF values
exceeding 100 years at mounting temperatures of +85
C
and is housed in a SOT-89 industry-standard SMT package.

The AG102 uses a high reliability GaAs MMIC technology
and only requires DC-blocking and bypass capacitors, and
an inductive RF choke for operation. Internal matching
provides a 50 ohm input / output impedance minimizing the
number of required external components.

The broadband AG102 MMIC amplifier is well suited for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG102 will work for other applications within the 60 to
3000 MHz frequency range such as fixed wireless.

Functional Diagram
RF IN
GND
RF OUT
GND
1
2 3
4
Function Pin
No.
Input 1
Output/Bias 3
Ground 2,
4
Specifications
Parameter
Units Min Typ Max
Frequency Range
MHz
60
900
3000
Gain dB
13
14
16
Input Return Loss
dB
10
Output Return Loss
dB
27
Output P1dB
dBm
+18
Output IP3 (2)
dBm
+33
+36
Noise Figure
dB
2.1
Device Voltage
V
4.5
Device Current
mA
55
70
90
Thermal Resistance
C / W
88
Junction Temperature (3)
C 160

Test conditions unless otherwise noted.
1. T = 25 C, Supply Voltage = +4.5 V, Frequency = 900 MHz, 50 ohm system.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Typical Performance
Parameter Units
Typical
Frequency
MHz 900 1900 900 1900
S21
dB 14 12.8 14 12.5
S11
(5)
dB -10 -9 -10 -9
S22
dB -27 -22 -28 -19
Output
P1dB dBm +18 +18 +16 +16
Output
IP3
dBm +36 +36 +35 +35
Noise
Figure dB 2.1 2.2 2.0 2.2
Supply Voltage
V
+4.5
+3.3
Device Current
mA
70
68
4. Typical parameters reflect performance in a 50 ohm system.
5. Input return loss can be dramatically improved (<-20 dB) with an input series inductance of 6.8 nH
for 900 MHz applications or with an input shunt inductance of 5.6 nH for 1.9 GHz applications.

Absolute Maximum Rating
Ordering Information
Parameter
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
C
AG102
GaAs MMIC Gain Block
Storage Temperature
-55 to +125
C
AG102-PCB 0.8 2.6 GHz Fully Assembled Application Circuit
DC Voltage
+5.5 V
RF Input Power (continuous)
+6 dBm
Junction Temperature
+220
C
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
October
2003
AG102
GaAs MMIC Gain Block
Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (V
DS
= +4.5 V, I
DS
= 70 mA, T = 25
C, 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Frequency
6
8
10
12
14
16
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
Gain (dB)
-40c
+25c
+85c
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
S11 (dB)
-40c
+25c
+85c
S22 vs. Frequency
-40
-30
-20
-10
0
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
S22 (dB)
-40c
+25c
+85c
Noise Figure vs. Frequency
0
1
2
3
4
5
6
0
500
1000 1500
2000
2500
3000
Frequency (MHz)
NF (dB)
Output Power / Gain vs. Input Power
frequency = 900 MHz, Temp = +25 C
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Input Power (dBm)
Gain (dB)
12
14
16
18
20
22
Out
p
ut Power
(
dBm
)
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 1900 MHz, Temp = +25 C
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Input Power (dBm)
Gain (dB)
12
14
16
18
20
22
Out
p
ut Power
(
dBm
)
Output Power
Gain
Output IP3 vs. Output Power
frequency = 900 / 910 MHz
20
25
30
35
40
0
2
4
6
8
10
Output Power (dBm)
OIP3 (dBm)
-40c
+25c
+85c
Output IP3 vs. Output Power
frequency = 1900 / 1910 MHz
20
25
30
35
40
0
2
4
6
8
10
Output Power (dBm)
OIP3 (dBm)
-40c
+25c
+85c
ACPR vs. Channel Power
25 C, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW
-75
-65
-55
-45
-35
6
7
8
9
10
11
12
13
Output Channel Power (dBm)
ACPR (dBc)
freq = 1900 MHz
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
October
2003
AG102
GaAs MMIC Gain Block
Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (V
DS
= +3.3 V, I
DS
= 68 mA, T = 25
C, 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Frequency
6
8
10
12
14
16
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
Gain (dB)
-40c
+25c
+85c
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
S11 (dB)
-40c
+25c
+85c
S22 vs. Frequency
-40
-30
-20
-10
0
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
S22 (dB)
-40c
+25c
+85c
Noise Figure vs. Frequency
0
1
2
3
4
5
6
0
500
1000 1500
2000
2500
3000
Frequency (MHz)
NF (dB)
Output Power / Gain vs. Input Power
frequency = 900 MHz, Temp = +25 C
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Input Power (dBm)
Gain (dB)
10
12
14
16
18
20
Out
p
ut Power
(
dBm
)
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 1900 MHz, Temp = +25 C
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Input Power (dBm)
Gain (dB)
10
12
14
16
18
20
Out
p
ut Power
(
dBm
)
Output Power
Gain
Output IP3 vs. Output Power
frequency = 900 / 910 MHz
20
25
30
35
40
0
2
4
6
8
10
Output Power (dBm)
OIP3 (dBm)
-40c
+25c
+85c
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
October
2003
AG102
GaAs MMIC Gain Block
Product Information
The Communications Edge
TM
Application Circuit: 800 2600 MHz (AG102-PCB)
CAP
C=
ID=
56 pF
C5
CAP
C=
ID=
56 pF
C2
IND
L=
ID=
12 nH
L3
CAP
C=
ID=
18000 pF
C6
IND
L=
ID=
10 nH
L2
TLINP
F0=
Loss=
Eeff=
L=
Z0=
ID=
0 GHz
0
3.52
170 mil
50 Ohm
TL1
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Frequency (GHz)
-30
-20
-10
0
10
20
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Reference Design: 70 MHz
CAP
C=
ID=
1e4 pF
C3
CAP
C=
ID=
1e4 pF
C1
IND
L=
ID=
180 nH
L2
CAP
C=
ID=
1e4 pF
C2
IND
L=
ID=
180 nH
L1
CAP
C=
ID=
5.6 pF
C4
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
Frequency (GHz)
-20
-10
0
10
20
M
agn
i
t
ud
e (
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Reference Design: 170 MHz
CAP
C=
ID=
1000 pF
C3
CAP
C=
ID=
1000 pF
C1
IND
L=
ID=
220 nH
L2
CAP
C=
ID=
1000 pF
C2
IND
L=
ID=
47 nH
L1
CAP
C=
ID=
4.7 pF
C4
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
0.05
0.075
0.1
0.13
0.15
0.18
0.2
0.23
0.25
Frequency (GHz)
-40
-30
-20
-10
0
10
20
M
agni
t
u
d
e
(
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
October
2003
AG102
GaAs MMIC Gain Block
Product Information
The Communications Edge
TM
Reference Design: 450 MHz
CAP
C=
ID=
1000 pF
C3
CAP
C=
ID=
1000 pF
C1
IND
L=
ID=
82 nH
L2
CAP
C=
ID=
1000 pF
C2
IND
L=
ID=
15 nH
L1
CAP
C=
ID=
1.2 pF
C4
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Frequency (GHz)
-40
-30
-20
-10
0
10
20
M
agn
i
t
ud
e (
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Reference Design: 800 MHz
CAP
C=
ID=
100 pF
C3
CAP
C=
ID=
100 pF
C1
IND
L=
ID=
33 nH
L2
CAP
C=
ID=
100 pF
C2
IND
L=
ID=
6.8 nH
L1
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
0.6
0.7
0.8
0.9
1
1.1
1.2
Frequency (GHz)
-40
-30
-20
-10
0
10
20
M
agn
i
t
ud
e (
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Reference Design: 1900 / 2140 MHz
CAP
C=
ID=
68 pF
C3
CAP
C=
ID=
68 pF
C1
IND
L=
ID=
33 nH
L2
CAP
C=
ID=
68 pF
C2
IND
L=
ID=
5.6 nH
L1
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
Frequency (GHz)
-30
-20
-10
0
10
20
M
agn
i
t
ud
e (
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Reference Design: CATV Single-ended Operation
CAP
C=
ID=
1000 pF
C3
CAP
C=
ID=
1000 pF
C1
IND
L=
ID=
680 nH
L2
CAP
C=
ID=
1000 pF
C2
IND
L=
ID=
4.7 nH
L1
RES
R=
ID=
5 Ohm
R1
SUBCKT
NET=
ID=
"AG102"
S1
PORT
Z=
P=
75 Ohm
1
PORT
Z=
P=
50 Ohm
2
+4.5 V
0
0.2
0.4
0.6
0.8
1
Frequency (GHz)
-40
-30
-20
-10
0
10
20
M
a
g
n
i
t
ud
e (
d
B
)
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)